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    MARKING CODE DUAL GATE MOS Search Results

    MARKING CODE DUAL GATE MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE DUAL GATE MOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    specifications of MOSFET

    Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
    Text: PRODUCT announcement Small Signal MOSFETs TLP Tiny Leadless Package SOT-563 SOT-883L TLM621H Single or Dual (Single) (Single) features • Single and Dual configurations Sample Devices • N-Channel and P-Channel devices available • Dual MOSFET with ESD protection (CMLDM7003)


    Original     		OT-563 OT-883L TLM621H CMLDM7003) 280mA, OT-563 CMLDM7003 CMLDM8002A CMLDM7002A specifications of MOSFET on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02 PDF

    CMLDM7005

    Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
    Text: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),


    Original     		CMLDM7005 CMLDM8005 CMLDM7585 650mA OT-563 OT-563 CMLDM7005 Power MOSFET p-Channel n-channel dual CMLDM8005 TR PDF

    PB CWDM305P

    Abstract: CWDM305P marking code 8 lead soic package CWDM305N
    Text: Product Brief CWDM305N Single, 5.8A N-Channel CWDM305P (Single, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) CWDM305PD (Dual, 5.3A P-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305N, CWDM305P, CWDM305ND,


    Original     		CWDM305N CWDM305P CWDM305ND CWDM305PD CWDM305N, CWDM305P, CWDM305ND, CWDM305PD C305N C503P PB CWDM305P CWDM305P marking code 8 lead soic package CWDM305N PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,


    Original     		CWDM305P CWDM305PD CWDM305ND CWDM305ND CWDM305P CWDM305PD PDF

    DIODE l02

    Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
    Text: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)


    Original     		CMLDM7002A CMLDM7002AJ* CMLDM7002AJ 2N7002 CMLDM7002A: 200mA, DIODE l02 code l02 2n7002 pinout marking 02J sot transistor pinout marking l02 PDF

    marking c08

    Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
    Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode


    Original     		CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode P-Channel Field Effect Transistors, manufactured by the


    Original     		CMLDM8002A CMLDM8002AJ CMLDM8002AJ, OT-563 500mA 500mA, PDF

    CMLDM7005R

    Abstract: No abstract text available
    Text: CMLDM7005 CMLDM7005R SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver


    Original     		CMLDM7005 CMLDM7005R CMLDM7005. CMLDM7005: CMLDM7005R: OT-563 350mW 500mA PDF

    CMLDM7002AJ

    Abstract: 2N7002 CMLDM7002A marking 02J
    Text: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)


    Original     		CMLDM7002A CMLDM7002AJ OT-563 CMLDM7002AJ 2N7002 200mA, 400mA CMLDM7002A marking 02J PDF

    CMLDM7003E

    Abstract: No abstract text available
    Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE 28-January CMLDM7003E PDF

    marking code C3J

    Abstract: C3j marking c30 C3J code C3J marking c3j CMLDM7003 CMLDM7003J sot transistor pinout
    Text: CMLDM7003 CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE • ESD protected up to 2kV MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current


    Original     		CMLDM7003 CMLDM7003J CMLDM7003: CMLDM7003J: OT-563 17-October marking code C3J C3j marking c30 C3J code C3J marking c3j sot transistor pinout PDF

    C3j marking

    Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
    Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: 26-June C3j marking code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: PDF

    CMLDM7003E

    Abstract: CMLDM7003J CMLDM7003 CMLDM7003JE marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73
    Text: Central CMLDM7003E CMLDM7003JE Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003E CMLDM7003JE CMLDM7003JE CMLDM7003E OT-563 CMLDM7003: CMLDM7003J: 25-September CMLDM7003J CMLDM7003 marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip P-Channel enhancement-mode MOSFETs, manufactured by the P-Channel DMOS Process,


    Original     		CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: 200mA PDF

    CMLDM8002A

    Abstract: CMLDM8002AJ marking cg8
    Text: Central CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment


    Original     		CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, 200mA CMLDM8002AJ marking cg8 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip enhancement-mode P-Channel MOSFETs, manufactured by the P-Channel DMOS Process,


    Original     		CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: 200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8002A CMLDM8002AG* CMLDM8002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip Enhancement-mode P-Channel Field Effect


    Original     		CMLDM8002A CMLDM8002AG* CMLDM8002AJ OT-563 CMLDM8002A CMLDM8002AJ, CMLDM8002A: CMLDM8002AJ: 200mA PDF

    sot transistor pinout

    Abstract: CMLDM7003E CMLDM7003JE C73 MARKING CODE 10 marking code dual transistor
    Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE 18-January sot transistor pinout CMLDM7003E C73 MARKING CODE 10 marking code dual transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE 18-January PDF

    CMLDM7003E

    Abstract: CMLDM7003JE CMLDM7003J
    Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel


    Original     		CMLDM7003E CMLDM7003JE OT-563 CMLDM7003JE CMLDM7003E CMLDM7003E: CMLDM7003JE: 200mA CMLDM7003J PDF

    CMLDM7003

    Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
    Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G PDF

    Untitled

    Abstract: No abstract text available
    Text: CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305ND is a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient


    Original     		CWDM305ND CWDM305ND PDF

    S 170 MOSFET TRANSISTOR

    Abstract: No abstract text available
    Text: Central CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTI DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R CMLDM7002A and CMLDM7002AJ are special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect


    OCR Scan     		CMLDM7002A CMLDM7002AJ* CMLDM7002AJ 2N7002 CMLDM7002A: OT-563 S 170 MOSFET TRANSISTOR PDF