Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.
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LH28F160BVHE-BTL90
LHF16V11)
EL10Y079A
LHF16Vll
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LH28F160BVHE-BTL90
Abstract: C8000 BTL90 SHARP 20 WZ 51
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.
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LH28F160BVHE-BTL90
LHF16V11)
EL10Y079A
LHF16Vll
LH28F160BVHE-BTL90
C8000
BTL90
SHARP 20 WZ 51
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38LM MARKING
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.
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LH28F160BVE-BTL90
LHF16V09)
EL10Y075A
LHFl6V09
38LM MARKING
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MARKING C7K
Abstract: marking c7 sot-23 marking code C7F
Text: SN74LVC1G17 www.ti.com SCES351T – JULY 2001 – REVISED NOVEMBER 2012 SINGLE SCHMITT-TRIGGER BUFFER Check for Samples: SN74LVC1G17 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation
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SN74LVC1G17
SCES351T
24-mA
MARKING C7K
marking c7 sot-23
marking code C7F
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.
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LH28F160BVE-BTL90
LHF16V09)
EL10Y075A
LHFl6V09
AP-00
AP-006
AP-007
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FY220
Abstract: FW221 EM28C1602C3FL
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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EM28C1602C3FL
66-Ball
32K-word
128K-words
3134-A
FY220
FW221
EM28C1602C3FL
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ES651
Abstract: EM28C1604C3FL
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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EM28C1604C3FL
66-Ball
32K-word
256K-words
3133-A
ES651
EM28C1604C3FL
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AM29F040B date code marking information
Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _
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MT28F160A3
Abstract: FW310 FW311
Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:
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MT28F160A3
32K-word
110ns
46-Pin
MT28F160A3
FW310
FW311
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MT28F160A3
Abstract: No abstract text available
Text: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks
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MT28F160A3
32K-word
110ns
46-Ball
MT28F160A3
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Untitled
Abstract: No abstract text available
Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:
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32K-word
110ns
MT28F160A3
46-Pin
MT28F160A3
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TOP SIDE MARKING m03
Abstract: FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12 SA13
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-90/-12/MBM29LV160B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20846-2E
MBM29LV160T-90/-12/MBM29LV160B-90/-12
48-pin
46-pin
48-ball
TOP SIDE MARKING m03
FPT-48P-M19
FPT-48P-M20
SA10
SA11
SA12
SA13
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C8000H
Abstract: No abstract text available
Text: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks
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32K-word
110ns
MT28F160A3
46-Ball
MT28F160A3
C8000H
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FW310
Abstract: FW311 fy310 FX312 FX310
Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:
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32K-word
110ns
MT28F160A3
46-Pin
MT28F160A3
FW310
FW311
fy310
FX312
FX310
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements
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DS05-20846-4E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
48-pin
46-pin
48-ball
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
SA10
SA11
SA12
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AMD 754
Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20846-4E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
48-pin
46-pin
48-ball
AMD 754
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
SA10
SA11
SA12
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fw610
Abstract: CSM 8A Code TRS-150 sample code read the flash memory manufacture id MT28F160C3 MARK SR1
Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
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MT28F160C3
46-Ball
32K-word
110ns
128-bit
MT28F160C3
fw610
CSM 8A Code
TRS-150
sample code read the flash memory manufacture id
MARK SR1
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
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32K-word
110ns
128-bit
MT28F160C3
46-Ball
MT28F160C3
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fw610
Abstract: No abstract text available
Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
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32K-word
110ns
128-bit
MT28F160C3
46-Pin
MT28F160C3
fw610
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fw610
Abstract: MT28F160C3FD-9 BET TRS-150 MT28F160C3 TOP SIDE MARKING OF MICRON micron flash otp
Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
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MT28F160C3
46-Pin
32K-word
110ns
128-bit
MT28F160C3
fw610
MT28F160C3FD-9 BET
TRS-150
TOP SIDE MARKING OF MICRON
micron flash otp
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements
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DS05-20883-1E
MBM29LV160TE/BE
48-pin
48-ball
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-2E
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
D-63303
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9012 3CH
Abstract: 29LV160
Text: FLASH MEMORY CMOS 1 6 M 2 M X 8 /1 M m X 1 6 B IT jWklMHW. ÏW' I M 60T-90/-12/MB M B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands
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B-90/-12
60T-90/-12/MB
48-pin
46-pin
48-ball
F9802
9012 3CH
29LV160
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MBM29LV160BB
Abstract: No abstract text available
Text: FLASH MEMORY 16 M 2 M x 8 / 1 M x 16 BIT CMOS M B M 2 9 L V 1 6 0 T - 9 0 / - 1 0 /-1 2 / M B M 2 9 L V 1 6 O B -90/-1 0 /-1 2 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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48-pin
46-pin
48-ball
3-10/-12/M
LV160
B-90/-10/-12
LCC-46P-M02)
C46002S-4C-3
OT-90/-10/-12/M
MBM29LV160BB
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