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    MARKING CODE C7F Search Results

    MARKING CODE C7F Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV225URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMH2100TM/NOPB Texas Instruments 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-DSBGA -40 to 85 Visit Texas Instruments Buy
    LMV226UR/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMV228SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy
    LMV225SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 Visit Texas Instruments Buy

    MARKING CODE C7F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LH28F160BVHE-BTL90 LHF16V11) EL10Y079A LHF16Vll

    LH28F160BVHE-BTL90

    Abstract: C8000 BTL90 SHARP 20 WZ 51
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LH28F160BVHE-BTL90 LHF16V11) EL10Y079A LHF16Vll LH28F160BVHE-BTL90 C8000 BTL90 SHARP 20 WZ 51

    38LM MARKING

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LH28F160BVE-BTL90 LHF16V09) EL10Y075A LHFl6V09 38LM MARKING

    MARKING C7K

    Abstract: marking c7 sot-23 marking code C7F
    Text: SN74LVC1G17 www.ti.com SCES351T – JULY 2001 – REVISED NOVEMBER 2012 SINGLE SCHMITT-TRIGGER BUFFER Check for Samples: SN74LVC1G17 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation


    Original     		PDF SN74LVC1G17 SCES351T 24-mA MARKING C7K marking c7 sot-23 marking code C7F

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LH28F160BVE-BTL90 LHF16V09) EL10Y075A LHFl6V09 AP-00 AP-006 AP-007

    FY220

    Abstract: FW221 EM28C1602C3FL
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF EM28C1602C3FL 66-Ball 32K-word 128K-words 3134-A FY220 FW221 EM28C1602C3FL

    ES651

    Abstract: EM28C1604C3FL
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF EM28C1604C3FL 66-Ball 32K-word 256K-words 3133-A ES651 EM28C1604C3FL

    AM29F040B date code marking information

    Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
    Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _


    Original     		PDF

    MT28F160A3

    Abstract: FW310 FW311
    Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:


    Original     		PDF MT28F160A3 32K-word 110ns 46-Pin MT28F160A3 FW310 FW311

    MT28F160A3

    Abstract: No abstract text available
    Text: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF MT28F160A3 32K-word 110ns 46-Ball MT28F160A3

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:


    Original     		PDF 32K-word 110ns MT28F160A3 46-Pin MT28F160A3

    TOP SIDE MARKING m03

    Abstract: FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12 SA13
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-90/-12/MBM29LV160B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		PDF DS05-20846-2E MBM29LV160T-90/-12/MBM29LV160B-90/-12 48-pin 46-pin 48-ball TOP SIDE MARKING m03 FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12 SA13

    C8000H

    Abstract: No abstract text available
    Text: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF 32K-word 110ns MT28F160A3 46-Ball MT28F160A3 C8000H

    FW310

    Abstract: FW311 fy310 FX312 FX310
    Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:


    Original     		PDF 32K-word 110ns MT28F160A3 46-Pin MT28F160A3 FW310 FW311 fy310 FX312 FX310

    BGA-48P-M13

    Abstract: FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements


    Original     		PDF DS05-20846-4E 9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 48-pin 46-pin 48-ball BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12

    AMD 754

    Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		PDF DS05-20846-4E 9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 48-pin 46-pin 48-ball AMD 754 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12

    fw610

    Abstract: CSM 8A Code TRS-150 sample code read the flash memory manufacture id MT28F160C3 MARK SR1
    Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF MT28F160C3 46-Ball 32K-word 110ns 128-bit MT28F160C3 fw610 CSM 8A Code TRS-150 sample code read the flash memory manufacture id MARK SR1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF 32K-word 110ns 128-bit MT28F160C3 46-Ball MT28F160C3

    fw610

    Abstract: No abstract text available
    Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF 32K-word 110ns 128-bit MT28F160C3 46-Pin MT28F160C3 fw610

    fw610

    Abstract: MT28F160C3FD-9 BET TRS-150 MT28F160C3 TOP SIDE MARKING OF MICRON micron flash otp
    Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF MT28F160C3 46-Pin 32K-word 110ns 128-bit MT28F160C3 fw610 MT28F160C3FD-9 BET TRS-150 TOP SIDE MARKING OF MICRON micron flash otp

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements


    Original     		PDF DS05-20883-1E MBM29LV160TE/BE 48-pin 48-ball FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA


    Original     		PDF DS05-20883-2E MBM29LV160TE/BE 16M-bit, 48-pin 48-ball D-63303

    9012 3CH

    Abstract: 29LV160
    Text: FLASH MEMORY CMOS 1 6 M 2 M X 8 /1 M m X 1 6 B IT jWklMHW. ÏW' I M 60T-90/-12/MB M B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands


    OCR Scan     		PDF B-90/-12 60T-90/-12/MB 48-pin 46-pin 48-ball F9802 9012 3CH 29LV160

    MBM29LV160BB

    Abstract: No abstract text available
    Text: FLASH MEMORY 16 M 2 M x 8 / 1 M x 16 BIT CMOS M B M 2 9 L V 1 6 0 T - 9 0 / - 1 0 /-1 2 / M B M 2 9 L V 1 6 O B -90/-1 0 /-1 2 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    OCR Scan     		PDF 48-pin 46-pin 48-ball 3-10/-12/M LV160 B-90/-10/-12 LCC-46P-M02) C46002S-4C-3 OT-90/-10/-12/M MBM29LV160BB