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    FW221 Search Results

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    FW221 Price and Stock

    Bourns Inc CR1206-FW-2214ELF

    RES 2.21M OHM 1% 1/4W 1206
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    DigiKey CR1206-FW-2214ELF Reel 20,000 5,000
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    CR1206-FW-2214ELF Cut Tape 3,587 1
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    • 100 $0.0239
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    CR1206-FW-2214ELF Digi-Reel 1
    • 1 $0.1
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    Avnet Americas CR1206-FW-2214ELF Reel 12 Weeks 25,000
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    Mouser Electronics CR1206-FW-2214ELF 15,994
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    Master Electronics CR1206-FW-2214ELF
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    Bourns Inc CRH0603-FW-2214ELF

    RES SMD 2.21M OHM 1% 1/10W 0603
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    DigiKey CRH0603-FW-2214ELF Reel
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    NIC Components Corp NRLFW221M200V30X20F

    Cap Aluminum 220uF 200V 20% (30 X 20mm) Snap-In 10mm 0.904 Ohm 870mA 2000h 105°C - Bulk (Alt: NRLFW221M200V30X20)
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    Avnet Americas NRLFW221M200V30X20F Bulk 1,000
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    ITT Interconnect Solutions CA06FW22-14P-B-01

    Circular MIL Spec Connector
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    Mouser Electronics CA06FW22-14P-B-01
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    ITT Interconnect Solutions CA06FW22-14S-B-01

    Circular MIL Spec Connector
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    Mouser Electronics CA06FW22-14S-B-01
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    FW221 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FW221 Sanyo Semiconductor Ultrahigh-speed switching (2 devices) Original PDF
    FW221 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF

    FW221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA-2561

    Abstract: FW221
    Text: Ordering number:ENN6176 N-Channel Silicon MOSFET FW221 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2129 [FW221] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2


    Original     		PDF ENN6176 FW221 FW221] TA-2561 FW221

    FW221

    Abstract: No abstract text available
    Text: Ordering number:ENN6176 N-Channel Silicon MOSFET FW221 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2129 [FW221] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2


    Original     		PDF ENN6176 FW221 FW221] FW221

    S3P84E9

    Abstract: S3C84E9 FW221 FM24653 ISO-14001 SK-1000 84E9 AT/S3C84E9
    Text: USER'S MANUAL ERRATA This document contains the corrections of errors, typos and omissions in the following document. Samsung 8-bit CMOS S3C84E5/C84E9/P84E9 Microprocessor User's Manual Document Number: 21.1-S3-C84E5/C84E9/P84E9-082005 Publication: August 2005


    Original     		PDF S3C84E5/C84E9/P84E9 1-S3-C84E5/C84E9/P84E9-082005 S3C84E5/C84E9/P84E9 S3P84E9 S3C84E9 FW221 FM24653 ISO-14001 SK-1000 84E9 AT/S3C84E9

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original     		PDF 100ns 110ns 100ns/110ns 35ns/45ns MT28F321P2FG

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original     		PDF 100ns 110ns 100ns/110ns 35ns/45ns MT28F321P2FG

    FY220

    Abstract: FW221 EM28C1602C3FL
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF EM28C1602C3FL 66-Ball 32K-word 128K-words 3134-A FY220 FW221 EM28C1602C3FL

    S3P84E9

    Abstract: s3c84E9 84e9 FM24653 FW221 ISO-14001 AT/S3C84E9
    Text: USER'S MANUAL ERRATA This document contains the corrections of errors, typos and omissions in the following document. Samsung 8-bit CMOS S3C84E5/C84E9/P84E9 Microprocessor User's Manual Document Number: 21.1-S3-C84E5/C84E9/P84E9-082005 Publication: August 2005


    Original     		PDF S3C84E5/C84E9/P84E9 1-S3-C84E5/C84E9/P84E9-082005 S3C84E5/C84E9/P84E9 INT10/P4 44-Pin TB84E5/84E9 AS20D S3P84E9 s3c84E9 84e9 FM24653 FW221 ISO-14001 AT/S3C84E9

    IRF 850 mosfet

    Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
    Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.


    OCR Scan     		PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382