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    MARKING CODE 1G1 Search Results

    MARKING CODE 1G1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 1G1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit) HY27xAxx121mTxB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit)

    85X15

    Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
    Text: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit) 85X15 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit)

    hynix nand 1G

    Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
    Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary


    Original     		PDF HY27UA HY27SA 128Mx8bit 64Mx16bit) hynix nand 1G hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory

    capacitor Y5S 022

    Abstract: BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor
    Text: VISHAY INTE R TE C HNO L O G Y , IN C . INTERACTIVE data book CERAMIC DISC CAPACITORS vishay BCcomponents vsD-db0071-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vsD-db0071-0409 capacitor Y5S 022 BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor

    zener 2B1

    Abstract: marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1 STZ8000
    Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation


    Original     		PDF STZ8000 OD-323 OD-323 zener 2B1 marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1

    zener 2B1

    Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
    Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation


    Original     		PDF STZ8000 OD-323 STZ8390C OD-323 zener 2B1 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1

    zener 2B1

    Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
    Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation


    Original     		PDF STZ8000 OD-323 STZ8390C OD-323 zener 2B1 marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode

    HY27US081G1M

    Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
    Text: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27US 128Mx8bit 64Mx16bit) HY27US081G1M HY27US161G1M HY27US081G1M hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND

    HGR0924

    Abstract: 102M 250M 700M HGR0714 HGR0908
    Text: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING LIMITING ELEMENT


    Original     		PDF HGR0908 HGR0714 HGR0924 HGR0939 HGR1354 HGR1676 23-Oct-00 HGR0924 102M 250M 700M HGR0714 HGR0908

    marking code 1g1

    Abstract: No abstract text available
    Text: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING LIMITING ELEMENT


    Original     		PDF HGR0908 HGR0714 700M0 HGR0939 HGR1354 HGR1676 HGR0714 HGR0924 marking code 1g1

    Untitled

    Abstract: No abstract text available
    Text: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING LIMITING ELEMENT


    Original     		PDF HGR0908 HGR0714 HGR1354 HGR1676 HGR0714 HGR0924 HGR0939

    marking code 1g1

    Abstract: HGR0714 HGR0939 102M 250M 700M HGR0908 HGR0924 HGR1354
    Text: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL P 40˚C W LIMITING ELEMENT


    Original     		PDF HGR0908 HGR0714 1000h HGR0924 HGR0939 HGR1354 HGR1676 marking code 1g1 HGR0714 HGR0939 102M 250M 700M HGR0908 HGR0924 HGR1354

    HGR 1676

    Abstract: No abstract text available
    Text: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • • • • • Stable metal glaze film on ceramic substrate High voltage strength capabilities High ohmic values Lead Pb -free solder contacts Pure tin plating provides compatibility with lead (Pb)-free


    Original     		PDF 2002/95/EC 08-Apr-05 HGR 1676

    LVC1G17

    Abstract: lvc1g175
    Text: SN74LVC1G17 SINGLE SCHMITTĆTRIGGER BUFFER SCES351N − JUNE 2001 − REVISED OCTOBER 2005 D Available in the Texas Instruments D D D D D ±24-mA Output Drive at 3.3 V D Ioff Supports Partial-Power-Down Mode NanoStar and NanoFree Packages Supports 5-V VCC Operation


    Original     		PDF SN74LVC1G17 SCES351N 24-mA 000-V A114-A) A115-A) SNS74LVC2G53 scyb014 scyb005 LVC1G17 lvc1g175

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G14 SINGLE SCHMITT-TRIGGER INVERTER www.ti.com SCES218S – APRIL 1999 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


    Original     		PDF SN74LVC1G14 SCES218S 24-mA 000-V A114-A) A115-A)

    LVC1G14

    Abstract: No abstract text available
    Text: SN74LVC1G14 SINGLE SCHMITT-TRIGGER INVERTER www.ti.com SCES218S – APRIL 1999 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


    Original     		PDF SN74LVC1G14 SCES218S 24-mA 000-V A114-A) A115-A) SNS74LVC2G53 scyb014 scyb005 LVC1G14

    CXO-049

    Abstract: kss japan. cxo KSS CXO kss japan cxo 8000* kss 8000* kss crystal kss japan KSS 240 CXO-0 CXO kss
    Text: CRYSTAL CLOCK OSCILLATOR TTL WITH TRI-STATE CXO-Q49BZ Features • • • • 14 Pin Compatible DIP Package TTL Direct Drive 1.0 to 80.0 MHz Frequency Range Tri-State Function Frequency Range 1.0 to 80.0 MHz F r e q u e n c y Stab ility ± 50 ppm * O perating T e m p e ra tu re Range


    OCR Scan     		PDF CXO-Q49BZ CXO-049 kss japan. cxo KSS CXO kss japan cxo 8000* kss 8000* kss crystal kss japan KSS 240 CXO-0 CXO kss

    marking CODE MH

    Abstract: PHILIPS dual gate mosfets transistor 1G1
    Text: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR


    OCR Scan     		PDF BF904A; BF904AR; BF904AWR BF904AWR MSB014 BF904A SCA64 125004/00/03/pp16 marking CODE MH PHILIPS dual gate mosfets transistor 1G1

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CMY 91 GaAs MMIC • • • • • • GaAs mixer with integrated IF-amplifier for mobile communication Frequency range 0.8 GHz to 2.5 GHz Very low power consumption 1 mA typ. Single positive supply voltage Operating voltage range: 2.7 to 6 V Miniature package MW6 based on SOT23


    OCR Scan     		PDF Q62702-M9 S35b05 012241H 1900MHz D15E4E1

    Marking G1s

    Abstract: No abstract text available
    Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF


    OCR Scan     		PDF bbS3131 BF992R OT143R Marking G1s

    Untitled

    Abstract: No abstract text available
    Text: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and


    OCR Scan     		PDF LS3T31 BF990AR