B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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marking 6a2 smd
Abstract: zener Z11B
Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C
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500mW
94Leakage
marking 6a2 smd
zener Z11B
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Untitled
Abstract: No abstract text available
Text: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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Untitled
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)
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Untitled
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT * S2060 16.384 3 STORAGE TEMPERATURE RANGE: -40°C to +85°C 4) INPUT SUPPLY) VOLTAGE: Rated +5V ±10% 5) INPUT (SUPPLY) CURRENT: 20mA max SARONIX DATE XTAL OSC CODE 16.384 MHZ S2060 DOT / SQUARE CORNER INDICATES PIN 1 -55°C to +125°C
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S2060
MIL-STD-883,
S2060
SAR456
QAP81)
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10CTQ150
Abstract: 40HF P460
Text: Bulletin PD-20826 09/04 10CTQ150PbF 10 Amp SCHOTTKY RECTIFIER IF AV = 10 Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-20826
10CTQ150PbF
O-220
10CTQ150
40HF
P460
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10CTQ150-1
Abstract: 10CTQ150S 40HF P460 SMD-220 smd diode schottky code marking 5A
Text: Bulletin PD-21016 05/05 10CTQ150SPbF 10CTQ150-1PbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-21016
10CTQ150SPbF
10CTQ150-1PbF
10Amp
O-220
O-262
10CTQ150-1
10CTQ150S
40HF
P460
SMD-220
smd diode schottky code marking 5A
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20826 09/04 10CTQ150PbF 10 Amp SCHOTTKY RECTIFIER IF AV = 10 Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-20826
10CTQ150PbF
O-220
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10CTQ150
Abstract: No abstract text available
Text: Bulletin PD-20826 09/04 10CTQ150PbF 10 Amp SCHOTTKY RECTIFIER IF AV = 10 Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-20826
10CTQ150PbF
08-Mar-07
10CTQ150
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10CTQ150
Abstract: 40HF P460
Text: Bulletin PD-20826 09/04 10CTQ150PbF 10 Amp SCHOTTKY RECTIFIER IF AV = 10 Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-20826
10CTQ150PbF
12-Mar-07
10CTQ150
40HF
P460
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SMD MARKING code 5A
Abstract: PD-21016
Text: Bulletin PD-21016 05/05 10CTQ150SPbF 10CTQ150-1PbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-21016
10CTQ150SPbF
10CTQ150-1PbF
10Amp
12-Mar-07
SMD MARKING code 5A
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21016 05/05 10CTQ150SPbF 10CTQ150-1PbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 µs sine 620 A VF @ 5 Apk, TJ = 125°C
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PD-21016
10CTQ150SPbF
10CTQ150-1PbF
10Amp
08-Mar-07
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
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Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429
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Q68000-A8321
Q68000-A8322
OT-23
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Darlington Transistors BSP 50 . BSP 52 • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP 60 . BSP 62 PNP Type Marking Ordering Code (tape and reel) Piti Coni ¡gura ion 1 2 3 4 Package1)
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Q62702-P1163
Q62702-P1164
Q62702-P1165
OT-223
EHP0094J
0235bD5
B235b05
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SA SOT-23
Abstract: diode sv 03
Text: SIPMOS N Channel MOSFET BSS 123 • SIPMOS - enhancement mode • Drain-source voltage Vfci = 100V • Corrtinuous drain current l D = 0.17A • Drain-source on-resistance • Total power dissipation /%* «• = 6.00 PD - 0.36W Type Marking Ordering code for
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Q62702-S512
BSS123
SA SOT-23
diode sv 03
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2907a TRANSISTOR PNP
Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474
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PDF
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Q68000-A6474
OT-23
Jan-22-1999
EHPGQ751
2907a TRANSISTOR PNP
2907a transistor
s2f sot-23 marking
2907A symbol
TRANSISTOR S2F
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Untitled
Abstract: No abstract text available
Text: HAL55x, HAL56x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7
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HAL55x,
HAL56x
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3904
Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*
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68000-A4416
OT-23
EHP0Q935
EHP00757
3904
tr 3904
TR 3906 PNP SM
Transistor 3904
transistor marking s1a
3904 SOT23
BT3904
sot23 3904
4007S
S1A SOT23
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transistor marking code 7e
Abstract: D 843 Transistor transistor MUI
Text: SIEMENS NPN Silicon Double Transistors • • • • BCV61 To be used as a current mirror Good thermal coupling and V b e matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel B C V 61 A B C V 61 B B C V 61 C
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OCR Scan
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PDF
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BCV61
Q62702-C2155
Q62702-C2156
Q62702-C2157
transistor marking code 7e
D 843 Transistor
transistor MUI
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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