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    MARKING CODE 0* DBM Search Results

    MARKING CODE 0* DBM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 0* DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSA1001

    Abstract: TSA1002 TSA1201 TQFP48 TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT
    Text: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA0801CF 0°C to +70°C TQFP48 Tray SA0801C TSA0801CFT 0°C to +70°C TQFP48


    Original     		PDF TSA0801 40MSPS, TSA0801CF TQFP48 SA0801C TSA0801CFT TSA0801IF TSA1001 TSA1002 TSA1201 TQFP48 TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT

    Untitled

    Abstract: No abstract text available
    Text: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA080 1CF 0°C to +70°C TQFP48 Tray SA0801C 0°C to +70°C TQFP48 Tape & Reel


    Original     		PDF TSA0801 40MSPS, 40Msps 40Msps TSA1001, TSA1002 TSA1201. TSA080

    HSMS-285x model

    Abstract: P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model
    Text: Agilent HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages Description Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies


    Original     		PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x configurat25 5989-0479EN 5989-2494EN HSMS-285x model P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model

    SCHOTTKY DIODE SOT-143

    Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin < -20 dBm applications at frequencies below


    Original     		PDF HSMS-285x OT-23/SOT-143 HSMS-282x HSMS-286x OT-323 SC70-3 OT-363 SC70-6 SCHOTTKY DIODE SOT-143 METAL DETECTOR circuit for make AN1124 chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt

    AV02-1377EN

    Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below


    Original     		PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 AV02-1377EN HSMS-285C S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j

    METAL DETECTOR circuit for make

    Abstract: 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz HSMS-285x marking code nt
    Text: Agilent HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages Description Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies


    Original     		PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x OT-363 SC70-6 5989-2494EN 5989-4022EN METAL DETECTOR circuit for make 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz marking code nt

    S11 SCHOTTKY diode

    Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below


    Original     		PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 S11 SCHOTTKY diode zero bias diode AV02-1377EN 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T marking FB

    diode 8255

    Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
    Text: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0


    Original     		PDF B8250 B-8250 diode 8255 LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325

    BASIC digital multimeter diagram

    Abstract: "Rf Detector" idc 14 pin out amplifier marking 365 AN1235 AN1751 STPAC01 STPAC01F2 Rf detector
    Text: STPAC01F2 IPAD RF DETECTOR FOR POWER AMPLIFIER CONTROL MAIN PRODUCT CHARACTERISTICS The STPAC01F2 has two outputs, one for the signal detection and another one for the temperature compensation: • VDCout = 0.88 V at 0.85 GHz at 10 dBm ■ VDCout = 1.07 V at 1.85 GHz at 10 dBm


    Original     		PDF STPAC01F2 STPAC01F2 BASIC digital multimeter diagram "Rf Detector" idc 14 pin out amplifier marking 365 AN1235 AN1751 STPAC01 Rf detector

    BFP36

    Abstract: No abstract text available
    Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP360W VPS05605 OT343 BFP36

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


    Original     		PDF FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS

    AVAGO month CODE

    Abstract: No abstract text available
    Text: HSMS-285Y Zero Bias Schottky Detector Diodes In Surface Mount SOD-523 Package Data Sheet Description/Applications Features The HSMS-285Y of Avago Technologies is a zero bias Schottky detector diodes that designed and optimized for use in small signal Pin < -20 dBm applications at


    Original     		PDF HSMS-285Y OD-523 HSMS-285Y 50mV/uW HSMS-285Y-BLKG HSMS-285Y-TR1G AV01-0117EN AVAGO month CODE

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original     		PDF FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B

    Untitled

    Abstract: No abstract text available
    Text: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3


    Original     		PDF BFS360L6 BFR360L3)

    A08 monolithic amplifier

    Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
    Text: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)


    Original     		PDF WW107 WW107 RRR137 RRR116 A08 monolithic amplifier mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


    OCR Scan     		PDF BGA312 Q62702-G0042 T-143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs


    OCR Scan     		PDF EHA07312 Q62702-G0042 OT-143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


    OCR Scan     		PDF BGA310 Q62702-G0041 T-143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code


    OCR Scan     		PDF EHA07312 Q62702-G0041 OT-143

    Untitled

    Abstract: No abstract text available
    Text: rS T O K O TK16203 RF AM PLIFIER FEATURES APPLICATIONS • 400 MHz Bandwidth ■ RF Communications ■ 5 dB Noise Figure ■ Telecommunications ■ 23 dB Insertion Gain ■ Local Area Networks ■ +4 dBm 1 dB Compression Point ■ Personal Communications Equipment


    OCR Scan     		PDF TK16203 TK16203 TDti7ti32