nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74F219A 64-bit TTL bipolar RAM, non-inverting 3-State Product specification IC15 Data Handbook Philips Semiconductors 1996 Jan 05 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, non-inverting (3-State) FEATURES 74F219A
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74F219A
64-bit
74F219A
74F219
74F189A)
C3F219A
74F219
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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MARKING C3F
Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
HS350
WS260
VP215
IR260
PU10206EJ01V0DS
MARKING C3F
PC8181TB
F MARKING 6PIN
transistor marking wt
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G11 www.ti.com SCES487E – SEPTEMBER 2003 – REVISED DECEMBER 2011 SINGLE 3-INPUT POSITIVE-AND GATE Check for Samples: SN74LVC1G11 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation
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SN74LVC1G11
SCES487E
24-mA
000-V
A114-A)
A115-A)
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MPC565MZP56D
Abstract: MPC565MZP56D device marking MPC565 MPC566 J1850 AR922 TEA 1019 jtag mpc565
Text: 32-BIT EMBEDDED CONTROLLER DIVISION CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC565.D General Business Use Report Generated: Mon Feb 17, 2003, 15:27:55 Page 1 = | MPC565.D | =
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32-BIT
MPC565
MPC565MZP56D
MPC565MZP56D device marking
MPC566
J1850
AR922
TEA 1019
jtag mpc565
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G11 www.ti.com SCES487F – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-AND Gate Check for Samples: SN74LVC1G11 FEATURES DESCRIPTION • The SN74LVC1G11 performs the Boolean function Y + A • B • C or Y + A B ) C in positive logic.
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SN74LVC1G11
SCES487F
SN74LVC1G11
24-mA
000-V
A114-A)
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G11 www.ti.com SCES487F – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-AND Gate Check for Samples: SN74LVC1G11 FEATURES DESCRIPTION • The SN74LVC1G11 performs the Boolean function Y + A • B • C or Y + A B ) C in positive logic.
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SN74LVC1G11
SCES487F
SN74LVC1G11
24-mA
000-V
A114-A)
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marking 3f 6pin
Abstract: PC2771T marking C3f F MARKING 6PIN
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
marking 3f 6pin
PC2771T
marking C3f
F MARKING 6PIN
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MPC563 MCU
Abstract: diode BBC MPC561 MPC563 QADC64
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR, 32-BIT EMBEDDED CONTROLLER DIVISION CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC563.C General Business Use Report Generated: Wed May 12, 2004, 09:22:58 Page 1 =
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32-BIT
MPC563
MPC563 MCU
diode BBC
MPC561
QADC64
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Transistor C3E
Abstract: C2H marking
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3241TB
PC3241TB
IR260
WS260
HS350
PU10774EJ01V0DS
Transistor C3E
C2H marking
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MPC561
Abstract: MPC563 QADC64 AR11-0 AR-1117
Text: FREESCALE SEMICONDUCTOR, 32-BIT EMBEDDED CONTROLLER DIVISION CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC563.C General Business Use Report Generated: Fri Nov 5, 2004, 10:21:50 Page 1 = | MPC563.C |
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32-BIT
MPC563
MPC561
QADC64
AR11-0
AR-1117
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YU MARKING diode
Abstract: No abstract text available
Text: TO SH IB A 1SV293 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V293 VCO FOR UHF BAND RADIO Unit in mm ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance
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1SV293
961001EAA1
YU MARKING diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C15FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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HN3C15FU
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HN3C16
Abstract: No abstract text available
Text: HN3C16FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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HN3C16FU
HN3C16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in U S 6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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HN3C09FU
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Untitled
Abstract: No abstract text available
Text: HN3C10FU TOSHIBA TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL PLANAR TYPE N3 r 1 nFh VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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HN3C10FU
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Untitled
Abstract: No abstract text available
Text: HN3C12FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3ri7Fll VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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HN3C12FU
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sod323 diode marking code 2E
Abstract: V2E MARKING DIODE sod323 diode marking code AC DIODE B74 DIODE marking code B74 BB134 diode code B74 UHF diode BB135 UHF variable capacitance diode
Text: Philips Semiconductors_ b b 5 3 ^ 3 1 Q0Sb3^b 73fl W A P X Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE bTE T> Q UICK REFERENCE DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar
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BB134
BB134
OD323.
BB135,
sod323 diode marking code 2E
V2E MARKING DIODE
sod323 diode marking code AC
DIODE B74
DIODE marking code B74
diode code B74
UHF diode
BB135
UHF variable capacitance diode
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Untitled
Abstract: No abstract text available
Text: T O SH IB A U3FWK42 TOSHIBA SCHOTTKY BARRIER RECTIFIER II 3 F W TRENCH SCHOTTKY BARRIER TYPE K A I Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Peak Forward Voltage Repetitive Peak Reverse Voltage Average Output Rectified Current VFM = 0.40 V MAX.
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U3FWK42
95MAX.
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1FWJ43L TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS • Low Forward Voltage VFM = 0.40 V Max. • Average Forward Current !f( A V ) = 1 .0 A • Repetitive Peak Reverse Voltage V r r m = 30V MAXIMUM RATINGS
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1FWJ43L
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