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    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    MARKING BVV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIP006

    Abstract: No abstract text available
    Text: MIP0060ME Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 7 Package SSOP016-P-0300 Marking MIP006 A．ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C NO. 1 Item VCC Voltage


    Original     		PDF MIP0060ME SSOP016-P-0300 MIP006 40companies MIP01* MIP02* MIP00* MIP55* MIP816/826 MIP52* MIP006

    MIP004

    Abstract: No abstract text available
    Text: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500


    Original     		PDF MIP0040MS MIP004 MIP01* MIP02* MIP00* MIP55* MIP816/826 MIP52* MIP56* MIP53* MIP004

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UTD484 UTD484 UTD484L-TN3-T UTD484G-TN3-T O-252 UTD484L-TN3-R UTD484G-TN3-R UTD484G-K08-3030-R QW-R502-207

    takamisawa relay tv-3

    Abstract: FTR-F4AK024T takamisawa relay vb 24 12VDC TV-3 takamisawa takamisawa 24vdc coil relay takamisawa relay 12VDC 4 pole takamisawa relay takamisawa relay 24VDC takamisawa 9vdc takamisawa relay 12VDC vb
    Text: FUJITSU TAKAMISAWA COMPONENT CATALOG POWER RELAY 2 POLE 5A/TV-3 RATED COMPACT TYPE FTR-F4 SERIES • FEATURES ● ● ● ● ● ● Small high density type relay 288mm2 save 24% compared to VB UL/CSA TV-3 rating Insulation distance: minimum 6 mm between coil and


    Original     		PDF 288mm2 IEC65) takamisawa relay tv-3 FTR-F4AK024T takamisawa relay vb 24 12VDC TV-3 takamisawa takamisawa 24vdc coil relay takamisawa relay 12VDC 4 pole takamisawa relay takamisawa relay 24VDC takamisawa 9vdc takamisawa relay 12VDC vb

    MIP553

    Abstract: MIP5530MD MIP553MD TO-220IPD7-A2 traffic light using 68K
    Text: MIP5530MD Silicon MOS FET type integrated circuit • Features  Package  Possible to correspond to the output about 30 W by the world wide input. with heat sink  Typical LED peak current : 1.5 A  With built-in LED short-circuit protection function.


    Original     		PDF MIP5530MD O-220IPD7-A2 MIP553MD MIP553 MIP5530MD MIP553MD TO-220IPD7-A2 traffic light using 68K

    icl 555

    Abstract: MIP554 ICL300
    Text: MIP5540MS Silicon MOS FET type integrated circuit • Features  Package  It corresponds to the output for 10 W.  Typical LED peak current : 1.0 A  On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V.  The stability operation that suppresses the flicker in the triac light dimmer is possible.


    Original     		PDF MIP5540MS O-220IPD7-A2 MIP554 MIP803/804 MIP52 MIP816/826 MIP55 MIP50 MIP51 icl 555 MIP554 ICL300

    MIP554

    Abstract: ICL300 MIP5540MS icl 555
    Text: MIP5540MS Silicon MOS FET type integrated circuit • Features  Package  It corresponds to the output for 10 W.  Typical LED peak current : 1.0 A  On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V.  The stability operation that suppresses the flicker in the triac light dimmer is possible.


    Original     		PDF MIP5540MS O-220IPD7-A2 MIP554 MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP554 ICL300 MIP5540MS icl 555

    MIP5530MD

    Abstract: MIP553MD MIP53 MIP553 traffic light using 68K TO-220IPD7-A2 triac applications circuit diagram for dimmer lamp
    Text: MIP5530MD Silicon MOS FET type integrated circuit • Features  Package  Possible to correspond to the output about 30 W by the world wide input. with heat sink  Typical LED peak current : 1.5 A  With built-in LED short-circuit protection function.


    Original     		PDF MIP5530MD O-220IPD7-A2 MIP553MD voltageP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP5530MD MIP553MD MIP53 MIP553 traffic light using 68K TO-220IPD7-A2 triac applications circuit diagram for dimmer lamp

    t3d diode

    Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
    Text: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching


    OCR Scan     		PDF BYV28 BYV28-50 \15\10mm t3d diode Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode

    Mullard Mullard quick reference guide

    Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
    Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)


    OCR Scan     		PDF BZX91 1N825 1N827 1N829 1N914 1N916 1N4001G, CV7367 1N4002G, CV7756 Mullard Mullard quick reference guide CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier

    2N1499A

    Abstract: transistor SE 431 i071
    Text: M l L-S-19500/170A EL 8 M av 1969 SU PER SED IN G Ml L-S-19500/170(SigC) 15 February 1961 S EM IC O N D U C T O R DEVICE,- TRANSISTO R. TYPE 2N1499A 1. PN P. G E R M A N IU M SCO PE 1.1 Scope.- This specification covers the détail requirements for gemcr.!*jinf P N P ;


    OCR Scan     		PDF L-S-19500/170A L-S-19500/170 2N1499A 5961-A244 2N1499A transistor SE 431 i071

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY a /II^ C a r iflV I I o„T MT2LSYT3272T1/T2, MT4LSY6472T1/T2 32K, 64K x 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS 32K, 64K x 72 SRAM « n A * i +3-3V s u p p l y w it h c l o c k e d , r e g i s t e r e d INPUTS AND BURST COUNTER n* r > • ■■ r


    OCR Scan     		PDF MT2LSYT3272T1/T2, MT4LSY6472T1/T2 0G1GL33

    intel 80486 microprocessor pin diagram

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 32K MT58LC32K36B2 36 SYNCHRONOUS SRAM X 32K x 36 SRAM +3.3V SUPPLY W ITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • • Fast access times: 9,10 ,1 2 a n d 17ns Fast OE: 5, 6 and 7ns


    OCR Scan     		PDF MT58LC32K36B2 486/Pentium 100-lead 32-bit 64-bit MT58LC32K36B2LG-9 MT581C32K36B2 intel 80486 microprocessor pin diagram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M I I^ P O N 32K SYNCHRONOUS SRAM MT58LC32K36B2 36 SYNCBURST SRAM X 32K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9,10,11,12 and 14ns


    OCR Scan     		PDF MT58LC32K36B2 100-lead MT58LC32K36B2LG-12 MT58LC32K36B2LG-9

    80486 microprocessor block diagram and pin diagrams

    Abstract: 1S1665
    Text: ADVANCE iu i|i“ n f n N K 1ll1— LTc MT58LC32K36M1 32K X 36 SYNCHRONOUS SRAM SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY W ITH CLOCKED, REGISTERED INPUTS AND LINEAR BURST COUNTER FEATURES • • • • • • • • • • • • • • Fast access times: 9 ,1 0 ,1 2 and 17ns


    OCR Scan     		PDF MT58LC32K36M1 100-lead 32-bit 680X0 MT58LC32K36M1LG-12 64-bit 80486 microprocessor block diagram and pin diagrams 1S1665

    ic 7476 pin diagram

    Abstract: No abstract text available
    Text: ADVANCE M I i r ^ P n N M T2LS Y T3264C 4 32K X 64 S Y N C H R O N O U S SRAM MODULE SYNCH RONOUS 32K x 64 SRAM Q R A M +3 3V s u p p ly , f u l l y r e g is t e r e d INPUTS, OUTPUTS AND BURST COUNTER ll/in n i II e O f t M l VI I V I U U U I - E Z FEATURES


    OCR Scan     		PDF T3264C SYT3264C4 ic 7476 pin diagram

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED M IC R O N I MT58LC64K36B2 64Kx:36 SYNCBURST’* SRAM SYNCHRONOUS SRAM 64K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9 ,1 0 ,1 1 ,1 2 and 14ns


    OCR Scan     		PDF 58LC64K MT58LC64K36BZ 64K36B2

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 64K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE access times: 5 and 6ns Single +3.3V ±5% power supply


    OCR Scan     		PDF MT58LC64K32C4 100-lead den76) 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY |U l|r-c a rn |\J I — M T 2 L S Y T 3 2 7 2 T 4 /T 6 . M T 4 L S Y 6 4 7 2 T 4 /T 6 32K. 64K x 72 S Y N C H R O N O U S S R A M M O D U L E SYNCHRONOUS SRAM MODULE 3 2 K, 64K x 72 SRAM 256KB/512KB, 3.3V, PIPELIN ED S Y N C H R O N O U S BURST, S E C O N D A R Y CACHE


    OCR Scan     		PDF 160-lead, MT2LSYT3272T4/T6. MT4LSY6472T4fT6

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE I 64K 'ECKNOlUüï, INC. SYNCHRONOUS SRAM X MT58LC64K32D7 32 SYNCBURST SRAM 64K x 32 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns


    OCR Scan     		PDF MT58LC64K32D7 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |U |IC = R O N 128K X MT58LC128K32B2 32 SYNCBURST SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • Fast access times: 9,10,11,12 and 14ns Fast OE access times: 5 and 6ns Single +3.3V ±5% power supply SNOOZE MODE for reduced power standby


    OCR Scan     		PDF MT58LC128K32B2 100-lead 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT58LC32K32D7 32K X 32 SYNCBURST SRAM M IC R O N 32K x 32 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 4.5,5,6,7 and 8ns


    OCR Scan     		PDF MT58LC32K32D7 100-lea1 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M T58LC 64K 32C 6 6 4 K X 32 S Y N C B U R S T SRAM I^ IC R D N 64K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim e: 7ns


    OCR Scan     		PDF T58LC 100-lead5

    T58LC

    Abstract: No abstract text available
    Text: ADVANCE M T58LC 64K 32B 2 6 4 K X 32 S Y N C B U R S T SRAM M IC R O N 64K x 32 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • F ast access tim es: 9 ,1 0 ,1 1 , 12 an d 14ns Fast O E access tim es: 5 and 6ns


    OCR Scan     		PDF T58LC 100-lead 128ns. MT58LC64K32B2