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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UTD484 UTD484 UTD484L-TN3-T UTD484G-TN3-T O-252 UTD484L-TN3-R UTD484G-TN3-R UTD484L-K08-3030-R UTD484G-K08-3030-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UTD484 UTD484 UTD484L-TN3-T UTD484G-TN3-T O-252 UTD484L-TN3-R UTD484G-TN3-R UTD484G-K08-3030-R QW-R502-207

    utd484

    Abstract: UTD484-TN3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UTD484 UTD484 UTD484L UTD484-TN3-R UTD484L-TN3-R UTD484-TN3-T UTD484L-TN3-T QW-R502-207 UTD484-TN3-R

    DIODE RL 207

    Abstract: utd484
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UTD484 UTD484 UTD484-TN3-R UTD484L-TN3-R O-252 UTD484-TN3-T UTD484L-TN3-T UTD484-K08-3030-R UTD484L-K08-3030-R DIODE RL 207

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UTD484 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF UTD484 UTD484 UTD484-TN3-R UTD484L-TN3-R O-252 UTD484-TN3-T UTD484L-TN3-T UTD484-K08-3030-R UTD484L-K08-3030-R

    Untitled

    Abstract: No abstract text available
    Text: 友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD. 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150103 Issue Date DFN封裝印字規則變更 Marking Rule Change of DFN Jan-27-2015 Page 1 of 2 變更主旨(TITLE):


    Original     		PDF IC-PPCN-150103 Jan-27-2015 QR-0205-01