BSO 612 CV
Abstract: No abstract text available
Text: Rev. 2.1 BSO 612 CV G SIPMOS Small-Signal-Transistor Product Summary Features • Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS on N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current
|
Original
|
612CV
BSO 612 CV
|
PDF
|
smd diode 615
Abstract: 615C
Text: Rev. 2.0 BSO 615 C G SIPMOS Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS · Drain-Source on-state Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rev. 2.1 BSO 612 CV G SIPMOS Small-Signal-Transistor Product Summary Features • Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS on N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current
|
Original
|
612CV
|
PDF
|
612CV
Abstract: CV 625 K 20 marking bso 8 pin
Text: Rev. 2.0 BSO 612 CV G SIPMOS Small-Signal-Transistor Product Summary Features • Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS on N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current
|
Original
|
612CV
612CV
CV 625 K 20
marking bso 8 pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rev. 2.1 BSO 615 C G SIPMOS Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS · Drain-Source on-state Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V
|
Original
|
|
PDF
|
615c
Abstract: No abstract text available
Text: Rev. 2.1 BSO 615 C G SIPMOS Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS · Drain-Source on-state Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V
|
Original
|
|
PDF
|
3d plus
Abstract: CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking
Text: PRELIMINARY 1.28 Gbit SDRAM ELECTRONICS 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package Features General Description Organized as 40M x 32-bit. Single +3.3V ±0.3V power supply Two stacks of ten 64 MBit SDRAM mounted on ceramic hermetic package
|
Original
|
3DSD1280-323H
32-bit.
100nF
MIL-STD-883D
/883D-S
3DSD1280-323H/PROTO
3DSD1280-323H/883D-S
F-78532
3DFP-0008
3d plus
CQFJ 84
A12 marking
airborn
CQFJ
3DSD1280-323H
3D marking
|
PDF
|
marking code SJ
Abstract: 536751-5 MARKING "SJ 29" T2T MARKING marking sj marking code SJ 00779 SJ 96 AMP D-3
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 REVISIONS LTR M 53.34[2.1 00] HOUSING MAX POST — 44. 65 [ 1 .758]0.94+0.05 TYP [.037+.002] - .095 0 .1 + .0 0 3
|
OCR Scan
|
0S12-0239-05
31MAR2000
marking code SJ
536751-5
MARKING "SJ 29"
T2T MARKING
marking sj
marking code SJ 00779
SJ 96
AMP D-3
|
PDF
|
DB1-822
Abstract: BF1012
Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627
|
OCR Scan
|
BF1012S
1012S
Q62702-F1627
OT-143
800MHz
1012S
DB1-822
BF1012
|
PDF
|
C3521
Abstract: No abstract text available
Text: DO NOT SCALE DIMENSIONS - -2 2 . 0 M A X . - - M M El R C IN m m - -PROJECTION NCp/ NOTES: SECTION -5 x 4 ,0 = 20,0• 0 ,9 5 MAX. A A -A CONTACT AREA: 0,76/^m Au MIN. OVER 1,27/zm ACTION — PIN AREA 4 ,0 -
|
OCR Scan
|
27/xm
27//m
CONEH-1725-99
EH-0948-96
C-3521
C3521
|
PDF
|
Untitled
Abstract: No abstract text available
Text: n r COPYRIGHT BT TRP CONNECTOR ALL RIGHTS RESERVED. E A MECHANICAL: A & 23APR2013 LOGO CHANGE JC KZ M ATERIALS: HOUSING - THERM OPLASTIC PET P O LY E ST E R FLAM M ABILITY RATING UL 9 4 V -0 . SHIELD - .010" THICK, C26800 B R A S S P R EPLA T ED WITH 30jxlnch MIN SEMI-BRIGHT
|
OCR Scan
|
23APR2013
C26800
30jxlnch
MAG45
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Filter connectors Solder pin straight high density with threaded insert Socket connector Plug connector Kai 1 i P2A Kat 1 i P3A A -0,76 B+0,25 15 31,19 16.79 25,00 33,30 26 39,52 25,12 33,30 '.%•$ 6,12 38,50 47,04 1013 44 53,42 38,84 47,04 - °'13 5,99
|
OCR Scan
|
37-pol.
|
PDF
|
10L42
Abstract: 1605 B iw16
Text: * SY10L422-5/7 SY100L422-5/7 SY101 L422-5/7 LOW-POWER 256 x 4 EC L RAM SYNERGY SEMICONDUCTOR FEA TU RES D ESC RIPT IO N The Synergy SY10LV100L/101L422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized
|
OCR Scan
|
SY10L422-5/7
SY100L422-5/7
SY101
L422-5/7
SY10LV100L/101L422
1024-bit
256-words-by-4-bits
10K/100K
SY100L422
SY101L422
10L42
1605 B
iw16
|
PDF
|
avasem
Abstract: No abstract text available
Text: AV9140 Integrated Circuit Systems, Inc. R4000 Frequency Generator Features Pin Configuration Ideally suited for R4000 family clock source Meets high and low time specifications Uses inexpensive 14.318 MHz reference crystal Selectable 50, 75 or 100 MHz output frequency
|
OCR Scan
|
AV9140
R4000
AV9140-01
AV9140
100MHz
avasem
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: * SY10L422-4/5/7 SY100L422-4/5/7 SY101L422-4/5/7 LOW POWER 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The Synergy SY10L/100L/101L422 are low-power versions of Synergy's ultra-high-speed 1,024-bit Random Access Memories RAMs , designed with advanced Emitter
|
OCR Scan
|
SY10L422-4/5/7
SY100L422-4/5/7
SY101L422-4/5/7
SY10L/100L/101L422
024-bit
SY10L/100L7101L422
256-words-by-4-bits,
10/100/101K
SY10L/100L/101L422-4DCS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PART NUMBER SELECTION TABLES IDU 1.5 N IDU 1.5 N/3AN I DU 1.5 N/4AN IDK 1.5 N/V Single Level Branch Branch Branch Feed Through Terminals Top Entry Available Options Version Beige/Beige Wemid ATEX certified -tt ^ Blue/Beige Wemid (ATEX certified)^ Type
|
OCR Scan
|
N/930000
|
PDF
|
marking G2s
Abstract: No abstract text available
Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S
|
OCR Scan
|
BF1012S
BF1012S
Q62702-F1627
OT-143
200MHz
200MHz
marking G2s
|
PDF
|
marking code g2s
Abstract: No abstract text available
Text: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
OCR Scan
|
BF1005S
Q62702-F1665
OT-143
1005S
800MHz
BF1005S
marking code g2s
|
PDF
|
marking jls
Abstract: marking code g1s
Text: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
OCR Scan
|
1009S
1009S
Q62702-F1628
OT-143
marking jls
marking code g1s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r n THIS bftAiwt IS UWWJ&USHKT- RELEASED FM WSUtAWN / COPYiaOHT - _ BY TYCO ELECTROMCS COgPORATIOH. WST ~ALL RIGHTS RESERVED. M R E V IS IO N S 22 B MECHANICAL: A \ A - . 1 0 0 TYP \ / 4. A ELECTRICAL: 426 SERIES MAGNETIC CIRCUIT Q OH MATERIALS: MOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0 .
|
OCR Scan
|
C26800
100jj
100jalNCH
MAG45
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,
|
OCR Scan
|
SST5912
SST5912
300ns,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRODUCT NU M BER SEE TABLE REVISIONS SH EET IN D E X EC N / D D R # 7 /1 9 /9 1 8 /3 /9 4 2 /1 /9 5 2 /2 2 /9 5 1 0 /1 /9 6 TOLERANCES UNLESS OTHERWISE SPECIFIED NO PART E L E CTR O N I CS TOT MÄT 2 /1 8 /9 1 riNISH •QOi .01 /.0 ± .3 PRODUCT FAMILY ■0QQÌ.0Q5/.Q01.13
|
OCR Scan
|
HF0RMAT10N
E-3067
0000i
|
PDF
|
1N4001
Abstract: LT1030 LT1030C LT1030CS BM 109
Text: r j i infad TECHNOLOGY Quad Low Power Line Driver F€ATUR€S DCSCftlPTIOn • ■ ■ ■ ■ ■ ■ ■ The LT1030 is an RS232 line driver that operates over a ± 5V to ± 15V range on low supply current and can be shut down to zero supply current. Outputs are fully protected
|
OCR Scan
|
LT1030CS
500/tA
RS232
LT1030
200mV
V-10V.
LT1030
1N4001
1N4001
LT1030C
LT1030CS
BM 109
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L T L i n ü t LT1004CS8-1.2/ _ LT1004CS8-2.5 ë TECHNOLOGY Micropower Voltage References DCSCRIPTIOn F€flTUR€S • Guaranteed ±4mV initial accuracy LT1004-1.2 ■ Guaranteed ± 20mV accuracy LT1004-2.5 ■ Guaranteed 10/uA operating current
|
OCR Scan
|
LT1004CS8-1
LT1004CS8-2
LT1004
LT1004-1
100MA
100aiA
10kHz
100mA
|
PDF
|
