BAR81W
Abstract: No abstract text available
Text: BAR81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT343 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAR81W
VPS05605
OT343
App10
Jul-06-2001
100MHz
BAR81W
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A1270
Abstract: transistor A1270 A1270 transistor datasheet 81W MARKING CODE a1270* transistor Q62702-A1270 marking 81W
Text: BAR 81W Silicon RF Switching Diode Preliminary data 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
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VPS05605
OT-343
Q62702-A1270
100MHz
Sep-04-1998
A1270
transistor A1270
A1270 transistor datasheet
81W MARKING CODE
a1270* transistor
Q62702-A1270
marking 81W
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marking 81W
Abstract: No abstract text available
Text: BAR 81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol
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VPS05605
OT-343
Oct-05-1999
100MHz
marking 81W
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smd JS
Abstract: smd JS 3 diode smd transistor js DIODE JS marking bbs diode sot 100 mA diode diode ja smd marking SOT343 smd diode marking ja
Text: Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100
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BAR81W
OT-343
smd JS
smd JS 3
diode
smd transistor js
DIODE JS
marking bbs diode sot
100 mA diode
diode ja
smd marking SOT343
smd diode marking ja
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Untitled
Abstract: No abstract text available
Text: Product specification BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100 mW Diode reverse voltage
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BAR81W
OT-343
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bbs 2002
Abstract: BAR81 BAR81W marking 015
Text: BAR81. Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package
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BAR81.
BAR81W
OT343
Dec-20-2002
bbs 2002
BAR81
BAR81W
marking 015
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Untitled
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package
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BAR81.
BAR81W
OT343
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Untitled
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " ! Type BAR81W
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BAR81.
BAR81W
OT343
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marking bbs
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package
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BAR81.
BAR81W
OT343
marking bbs
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BAR81
Abstract: BAR81W BGA420
Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package 1)
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BAR81.
BAR81W
OT343
BAR81
BAR81W
BGA420
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Untitled
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " ! Type BAR81W
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BAR81.
BAR81W
OT343
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Untitled
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " ! Type BAR81W
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BAR81.
BAR81W
OT343
15mponents
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Untitled
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package
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BAR81.
BAR81W
OT343
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Untitled
Abstract: No abstract text available
Text: BAR81. Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package
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BAR81.
BAR81W
OT343
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Untitled
Abstract: No abstract text available
Text: PCF2129AT Integrated RTC, TCXO and quartz crystal Rev. 4 — 7 November 2012 Product data sheet 1. General description The PCF2129AT is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz
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PCF2129AT
PCF2129AT
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Untitled
Abstract: No abstract text available
Text: PCF2129AT Integrated RTC, TCXO and quartz crystal Rev. 3 — 4 October 2012 Product data sheet 1. General description The PCF2129AT is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz
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PCF2129AT
PCF2129AT
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PCA2129T/Q900/2
Abstract: No abstract text available
Text: PCA2129T Accurate RTC with integrated quartz crystal for automotive Rev. 4 — 11 July 2013 Product data sheet 1. General description The PCA2129T is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz
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PCA2129T
PCA2129T
AEC-Q100
PCA2129T/Q900/2
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Untitled
Abstract: No abstract text available
Text: PCF2129T Accurate RTC with integrated quartz crystal for industrial Rev. 4 — 11 July 2013 Product data sheet 1. General description The PCF2129T is a CMOS1 Real Time Clock RTC and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz
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PCF2129T
PCF2129T
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss EHA0702D Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
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EHA0702D
OT-343
Q62702-A1270
012Q257
flE35bD5
100MHz
BE35hDS
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 ^ 31 □ 0 2 b 4 M0 b 7 5 IB APX Product specification Variable capacitance diode BBY31 N AUER PHILIPS/DISCRETE DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning
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BBY31
BBY31
QQ3fci443
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81W MARKING CODE
Abstract: Q62702A1270 marking code 7G
Text: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss IN - — - W » EHA07023 BAR 81W BBs 1 = A1 2 = C2 Q62702-A1270 Package eg Pin Configuration
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Q62702-A1270
EHA07023
OT-343
100MHz
81W MARKING CODE
Q62702A1270
marking code 7G
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BAL74
Abstract: SOT23 DIODE marking CODE AV Philips MBB diode RL-250
Text: Philips Semicon b iE P bbS3^31 Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. TSO IAPX Product specification N AUER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION
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BAL74
7Z96385
BAL74
SOT23 DIODE marking CODE AV
Philips MBB
diode RL-250
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N 407 Diode
Abstract: Philips MBB BAV74
Text: • hbS3T31 N AMER 00243b3 407 ■ PHILIPS/DISCRETE APX b7E BAV74 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists o f tw o diodes in a m icrom iniature plastic envelope. The cathodes are commoned and the device is intended fo r high-speed switching in thick and thin -film circuits.
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hbS3T31
Q0243b3
BAV74
OT-23.
N 407 Diode
Philips MBB
BAV74
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marking p3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA - - G r e e n f A 4 - — v-V L i n e M MBF2202PT1 Low rDS on Sm all-Signal VAOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy-con serving traits.
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MBF2202PT1
marking p3
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