marking B33 diode
Abstract: SMAB33
Text: SEMICONDUCTOR SMAB33 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.
|
Original
|
SMAB33
60MHz
marking B33 diode
SMAB33
|
PDF
|
marking B33 diode
Abstract: SMAB33
Text: SEMICONDUCTOR SMAB33 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.
|
Original
|
SMAB33
marking B33 diode
SMAB33
|
PDF
|
marking B32 diode SCHOTTKY
Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS320T3,
MBRS330T3,
MBRS340T3,
MBRS360T3
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
marking B33 diode
SMC case 403
b34 DIODE schottky
marking B32
DIODE B36
marking B3X
MARKING B33 SMC
diode code b3x
|
PDF
|
marking B33 diode
Abstract: marking thq
Text: /= T SGS-THOMSON *7#« B!»!llLi f[f3 iD gi TMMBAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. Matched batches are available on request. ABSOLUTE MAXIMUM RATINGS (limiting values
|
OCR Scan
|
|
PDF
|
marking B32 diode SCHOTTKY
Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS320T3,
MBRS330T3,
MBRS340T3
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
MBRS340T3G
b34 diodes on semiconductor
marking B33 diode
b34 DIODE schottky
marking B3X
Diode 145 B34
marking B32
|
PDF
|
smd 5b1
Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
|
Original
|
MM3ZB39
OD-323
OD-323
smd 5b1
smd transistor 5B1
5B1 zener diode
smd transistor marking ey
B20 zener diode
planar transistor 5B1
ez 724
zener diode 4B3
B15 diode smd
b36 smd diode
|
PDF
|
5B1 zener diode
Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
|
Original
|
MM3ZB39
OD-323
OD-323
5B1 zener diode
6b2 zener diode
zener diode 4B3
B20 zener diode
smd diode b13
zener diode b27
b16 zener
b36 smd diode
zener b27
smd diode code B12
|
PDF
|
zener diode b27
Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
|
Original
|
MM3ZB39
OD-323
OD-323
zener diode b27
5B1 zener diode
B20 zener diode
smd 5b1
zener Diode B22
diode zener B16
zener smd marking EA
smd diode code B12
6b2 zener diode
smd transistor marking ey
|
PDF
|
top marking c3
Abstract: fht 100
Text: EMIF04-MMC02F1 IPAD 4 line EMI filter including ESD protection Main application • MULTIMEDIACARD™ Description The EMIF04-MMC02F1 is a highly integrated array designed to suppress EMI / RFI noise for MULTIMEDIACARD™ port filtering. The EMIF04-MMC02F1 Flip-Chip packaging
|
Original
|
EMIF04-MMC02F1
EMIF04-MMC02F1
top marking c3
fht 100
|
PDF
|
R20 marking
Abstract: AN1235 AN1751 EMIF04-MMC02 EMIF04-MMC02F2 JESD97
Text: EMIF04-MMC02F2 IPAD 4 line EMI filter including ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Multimedia card for mobile phones, personal digital assistant, digital camera, MP3 players. Flip-Chip
|
Original
|
EMIF04-MMC02F2
EMIF04-MMC02
EMIF04
R20 marking
AN1235
AN1751
EMIF04-MMC02F2
JESD97
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung
|
Original
|
BZX84B2V4
BZX84B47
OT-23
O-236)
UL94V-0
|
PDF
|
R20 marking
Abstract: EMIF04-MMC02F1 JESD97 R4D11
Text: EMIF04-MMC02F1 IPAD 4 line EMI filter including ESD protection Main application • MULTIMEDIACARD™ Description The EMIF04-MMC02F1 is a highly integrated array designed to suppress EMI / RFI noise for MULTIMEDIACARD™ port filtering. The EMIF04-MMC02F1 Flip-Chip packaging
|
Original
|
EMIF04-MMC02F1
EMIF04-MMC02F1
R20 marking
JESD97
R4D11
|
PDF
|
marking code onsemi Diode B34
Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS320T3,
MBRS330T3,
MBRS340T3
MBRS340T3/D
marking code onsemi Diode B34
b34 DIODE schottky
SMC 403-03
MBRS340T3
b34 diode
diode marking b34
marking B34 diode SCHOTTKY
DIODE ON SEMICONDUCTOR B34
DIODE B34
diode schottky B34
|
PDF
|
R20 marking
Abstract: AN1235 EMIF04-MMC02 EMIF04-MMC02F2 JESD97
Text: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm
|
Original
|
EMIF04-MMC02F2
R20 marking
AN1235
EMIF04-MMC02
EMIF04-MMC02F2
JESD97
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm
|
Original
|
EMIF04-MMC02F2
|
PDF
|
MBRS320T3 MBRS330T3 MBRS340T3
Abstract: marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G
Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS320T3,
MBRS330T3,
MBRS340T3
MBRS340T3/D
MBRS320T3 MBRS330T3 MBRS340T3
marking B34 diode SCHOTTKY
b34 DIODE schottky
MBRS340T3G
diode marking b34
3B8000
DIODE ON SEMICONDUCTOR B34
marking B3X
MBRS340T3G marking
MBRS320T3G
|
PDF
|
KZ2 sot23
Abstract: KZ3 SOT23 diode kz9 zener KZE sot23 part marking b36 diode marking kyb zener b39 Marking B15 B18 SOT23 KY6 sot23 marking B33 diode
Text: BZX84B3V0 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • • ±2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 3.0V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
|
Original
|
BZX84B3V0
BZX84B39
350mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS36159
KZ2 sot23
KZ3 SOT23
diode kz9 zener
KZE sot23
part marking b36 diode
marking kyb
zener b39
Marking B15 B18 SOT23
KY6 sot23
marking B33 diode
|
PDF
|
"pocket Scale"
Abstract: No abstract text available
Text: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm
|
Original
|
EMIF04-MMC02F2
"pocket Scale"
|
PDF
|
KZ3 SOT23
Abstract: No abstract text available
Text: BZX84B2V7 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • 2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 2.7V - 39V Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound.
|
Original
|
BZX84B2V7
BZX84B39
350mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS36159
KZ3 SOT23
|
PDF
|
Zener Diode marking b27
Abstract: zener diode marking code B13 zener B13 zener diode b27
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V
|
Original
|
CMZB12
CMZB53
Zener Diode marking b27
zener diode marking code B13
zener B13
zener diode b27
|
PDF
|
80-133
Abstract: BZX79-B10 SC-40 311201 SC40 BZX79-C10 spice BZX79C8V2 spice BZX79-F6V2 BZX79-A6V2 b30 do-35
Text: Philips Semiconductors - PIP - BZX79 series; Voltage regulator diodes Your browser does not support script Philips Semiconductors Home Product Buy MySemiconductors Contact catalogonline Product Information Information as of 2003-02-16 BZX79 series; Voltage regulator
|
Original
|
BZX79
80-133
BZX79-B10
SC-40
311201
SC40
BZX79-C10 spice
BZX79C8V2 spice
BZX79-F6V2
BZX79-A6V2
b30 do-35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZV60 SERIES _ A VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended for use as low voltage stabilizers or voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series
|
OCR Scan
|
BZV60
DO-34
0033Tb7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small
|
Original
|
CMZB12
CMZB53
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors UML1N Low-frequency Transistor I UML1N •Features •A bsolu te maximum ratings Ta = 25°C Tr 1 ) The 2SA1037AK and a diode are housed independently in a UM T package. Parameter Symbol Limits Unit Vceo —60 -5 0 —6 -0 .1 S V V V A Ti Tstp
|
OCR Scan
|
2SA1037AK
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
|
PDF
|
