Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
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1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
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Schottky
Abstract: No abstract text available
Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520S-30
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404003
Schottky
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Schottky
Abstract: sot-23 MARKING CODE ZA smd code marking za
Text: RB706F-40 Low VF SMD Schottky Barrier Diode Small Signal SOT-323 Features ◇ Low reverse current, high reliability ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant
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RB706F-40
OT-323
OT-323
MIL-STD-202,
C/10s
Schottky
sot-23 MARKING CODE ZA
smd code marking za
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zener Z6 SOT23-6
Abstract: No abstract text available
Text: BZX84C2V4 - BZX84C39 CREAT BY ART 300mW, Surface Mount Zener Diode Small Signal Product Features SOT-23 ◇ Planar die construction ◇ 300 mW power dissipation ◇ Zener voltages from : 2.4V - 39V ◇ Ideally suited for automated assembly processes Mechanical Data
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BZX84C2V4
BZX84C39
300mW,
OT-23
OT-23,
J-STD-020
MIL-STD-202,
zener Z6 SOT23-6
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marking b14 diode
Abstract: diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14
Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS140T3
marking b14 diode
diode b14
b14 diode surface mount
b14 smb diode
diode schottky B14
marking code B14
diode MARKING CODE B14
marking B14
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marking b14 diode
Abstract: diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount
Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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PDF
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MBRS140T3
marking b14 diode
diode b14
marking code B14
diode MARKING CODE B14
b14 smb diode
b14 diode surface mount
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Untitled
Abstract: No abstract text available
Text: BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor CREAT BY ART Small Signal Product High Voltage Fast Switching Diode FEATURES - Fast switching device trr<50ns - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant
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BAV19W-G/BAV20W-G/BAV21W-G
OD-123
OD-123
MIL-STD-202,
C/10s
S1403005
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Untitled
Abstract: No abstract text available
Text: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant - Fast Switching Speed - General purpose switching application SOT-323
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BAS19W/20W/21W
OT-323
00-250V/200mA
OT-323
C/10s
BAS19W
BAS20W
BAS21W
S1405006
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SOT-323 100-250V/200mA Switching Diode
Abstract: No abstract text available
Text: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switching Speed - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant SOT-323 MECHANICAL DATA - Case: SOT-323 package
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BAS19W/20W/21W
OT-323
00-250V/200mA
OT-323
C/10s
BAS19W
BAS20W
BAS21W
S1405006
SOT-323 100-250V/200mA Switching Diode
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b14 smd diode
Abstract: No abstract text available
Text: 1N4148W-G Taiwan Semiconductor Small Signal Product High Speed SMD Switching Diode FEATURES - Fast switching device trr<4.0ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant
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1N4148W-G
OD-123
OD-123
MIL-STD-202,
C/10s
S1403004
b14 smd diode
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100E3
Abstract: marking b14 diode
Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA140T3
100E-3
10E-3
100E-6
10E-6
10E-3
100E-3
100E3
marking b14 diode
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diode schottky B14
Abstract: marking b14 diode
Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA140T3
100E-3
10E-3
100E-6
10E-6
10E-3
100E-3
diode schottky B14
marking b14 diode
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B14 ZP
Abstract: b14 smd diode diode B14 zp B14 zp diode
Text: TSZL52C2V4 - TSZL52C39 CREAT BY ART 200mW SMD Zener Diode Small Signal Product Features 1005 ◇ 200mW power dissipation ◇ High voltages form 2 - 39 V ◇ Designed for mounting on small surface ◇ Extremely thin / leadless package ◇ Pb free product Mechanical Data
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TSZL52C2V4
TSZL52C39
200mW
MIL-STD-750,
TSZL52C2V4
B14 ZP
b14 smd diode
diode B14 zp
B14 zp diode
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Untitled
Abstract: No abstract text available
Text: TESDC5V0LC Bi-directional ESD Protection Diode Small Signal Product Features SOD-323 ◇ Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ◇ Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) ◇ Protects one Bi-directional I/O line ◇ Working Voltage : 5V
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OD-323
IEC61000-4-2
IEC61000-4-4
OD-323
MIL-STD-202,
260oC/10s
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marking code onsemi Diode B14
Abstract: marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor
Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA140T3
r14525
MBRA140T3/D
marking code onsemi Diode B14
marking b14 diode
B14 marking code
403B
403D
MBRA140T3
marking b14 on semiconductor
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Untitled
Abstract: No abstract text available
Text: BZY55B2V4 thru BZY55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 36V - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZY55B2V4
BZY55B36
260oC/10s
S1408016
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Untitled
Abstract: No abstract text available
Text: BZS55B2V4 thru BZS55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 36V - Surface device type mounting - Matte Tin Sn lead finish with Nickel(Ni) underplate - Moisture sensitivity: level 1, per J-STD-020
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BZS55B2V4
BZS55B36
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
S1408001
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marking b14 on semiconductor
Abstract: B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA
Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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PDF
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MBRA140T3
r14525
MBRA140T3/D
marking b14 on semiconductor
B14 diode on semiconductor
403B
MBRA140T3
SMA MARKING 86
marking b14 diode
b14 diode surface mount
B14 SMA
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B14 diode on semiconductor
Abstract: marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode
Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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PDF
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MBRS140T3
r14525
MBRS140T3/D
B14 diode on semiconductor
marking b14 on semiconductor
B14 MARKING
marking b14 diode
marking code B14
marking code onsemi Diode B14
MBRS140T3
B14 marking code
b14 diode surface mount
b14 smb diode
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B14 diode on semiconductor
Abstract: marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14
Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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PDF
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MBRA140T3
r14525
MBRA140T3/D
B14 diode on semiconductor
marking b14 diode
marking b14 on semiconductor
marking code onsemi Diode B14
403D
MBRA140T3
SMA MARKING 86
marking code B14
B14 marking code
diode MARKING CODE B14
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Untitled
Abstract: No abstract text available
Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM70N600
ITO-220
O-251
O-252
TSM70N600CI
50pcs
TSM70N600CH
75pcs
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Untitled
Abstract: No abstract text available
Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
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TSM70N900
ITO-220
O-251
O-252
TSM70N900CI
50pcs
TSM70N900CH
75pcs
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b14 smb diode
Abstract: diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3
Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRS140T3
b14 smb diode
diode b14
MBRS140T3G
marking B14 diode
b14 diode surface mount
AS 031
B14g
smb marking code B14
5M MARKING CODE SCHOTTKY DIODE
MBRS140T3
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N-Channel
Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
Text: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)
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TSM6N60
O-251
O-252
75pcs
TSM6N60CH
TSM6N60CP
N-Channel
marking b14 diode
B14 DIODE
DIODE B14
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