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    MARKING B14 DIODE Search Results

    MARKING B14 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING B14 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on


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    1SS400 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404002 PDF

    Schottky

    Abstract: No abstract text available
    Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate


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    RB520S-30 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404003 Schottky PDF

    Schottky

    Abstract: sot-23 MARKING CODE ZA smd code marking za
    Text: RB706F-40 Low VF SMD Schottky Barrier Diode Small Signal SOT-323 Features ◇ Low reverse current, high reliability ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant


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    RB706F-40 OT-323 OT-323 MIL-STD-202, C/10s Schottky sot-23 MARKING CODE ZA smd code marking za PDF

    zener Z6 SOT23-6

    Abstract: No abstract text available
    Text: BZX84C2V4 - BZX84C39 CREAT BY ART 300mW, Surface Mount Zener Diode Small Signal Product Features SOT-23 ◇ Planar die construction ◇ 300 mW power dissipation ◇ Zener voltages from : 2.4V - 39V ◇ Ideally suited for automated assembly processes Mechanical Data


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    BZX84C2V4 BZX84C39 300mW, OT-23 OT-23, J-STD-020 MIL-STD-202, zener Z6 SOT23-6 PDF

    marking b14 diode

    Abstract: diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS140T3 marking b14 diode diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14 PDF

    marking b14 diode

    Abstract: diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS140T3 marking b14 diode diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount PDF

    Untitled

    Abstract: No abstract text available
    Text: BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor CREAT BY ART Small Signal Product High Voltage Fast Switching Diode FEATURES - Fast switching device trr<50ns - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant


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    BAV19W-G/BAV20W-G/BAV21W-G OD-123 OD-123 MIL-STD-202, C/10s S1403005 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant - Fast Switching Speed - General purpose switching application SOT-323


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    BAS19W/20W/21W OT-323 00-250V/200mA OT-323 C/10s BAS19W BAS20W BAS21W S1405006 PDF

    SOT-323 100-250V/200mA Switching Diode

    Abstract: No abstract text available
    Text: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switching Speed - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant SOT-323 MECHANICAL DATA - Case: SOT-323 package


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    BAS19W/20W/21W OT-323 00-250V/200mA OT-323 C/10s BAS19W BAS20W BAS21W S1405006 SOT-323 100-250V/200mA Switching Diode PDF

    b14 smd diode

    Abstract: No abstract text available
    Text: 1N4148W-G Taiwan Semiconductor Small Signal Product High Speed SMD Switching Diode FEATURES - Fast switching device trr<4.0ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant


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    1N4148W-G OD-123 OD-123 MIL-STD-202, C/10s S1403004 b14 smd diode PDF

    100E3

    Abstract: marking b14 diode
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRA140T3 100E-3 10E-3 100E-6 10E-6 10E-3 100E-3 100E3 marking b14 diode PDF

    diode schottky B14

    Abstract: marking b14 diode
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRA140T3 100E-3 10E-3 100E-6 10E-6 10E-3 100E-3 diode schottky B14 marking b14 diode PDF

    B14 ZP

    Abstract: b14 smd diode diode B14 zp B14 zp diode
    Text: TSZL52C2V4 - TSZL52C39 CREAT BY ART 200mW SMD Zener Diode Small Signal Product Features 1005 ◇ 200mW power dissipation ◇ High voltages form 2 - 39 V ◇ Designed for mounting on small surface ◇ Extremely thin / leadless package ◇ Pb free product Mechanical Data


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    TSZL52C2V4 TSZL52C39 200mW MIL-STD-750, TSZL52C2V4 B14 ZP b14 smd diode diode B14 zp B14 zp diode PDF

    Untitled

    Abstract: No abstract text available
    Text: TESDC5V0LC Bi-directional ESD Protection Diode Small Signal Product Features SOD-323 ◇ Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ◇ Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) ◇ Protects one Bi-directional I/O line ◇ Working Voltage : 5V


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    OD-323 IEC61000-4-2 IEC61000-4-4 OD-323 MIL-STD-202, 260oC/10s PDF

    marking code onsemi Diode B14

    Abstract: marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRA140T3 r14525 MBRA140T3/D marking code onsemi Diode B14 marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: BZY55B2V4 thru BZY55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 36V - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate


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    BZY55B2V4 BZY55B36 260oC/10s S1408016 PDF

    Untitled

    Abstract: No abstract text available
    Text: BZS55B2V4 thru BZS55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 36V - Surface device type mounting - Matte Tin Sn lead finish with Nickel(Ni) underplate - Moisture sensitivity: level 1, per J-STD-020


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    BZS55B2V4 BZS55B36 J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 S1408001 PDF

    marking b14 on semiconductor

    Abstract: B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRA140T3 r14525 MBRA140T3/D marking b14 on semiconductor B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA PDF

    B14 diode on semiconductor

    Abstract: marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS140T3 r14525 MBRS140T3/D B14 diode on semiconductor marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode PDF

    B14 diode on semiconductor

    Abstract: marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14
    Text: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRA140T3 r14525 MBRA140T3/D B14 diode on semiconductor marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


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    TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


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    TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs PDF

    b14 smb diode

    Abstract: diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


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    MBRS140T3 b14 smb diode diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3 PDF

    N-Channel

    Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
    Text: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)


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    TSM6N60 O-251 O-252 75pcs TSM6N60CH TSM6N60CP N-Channel marking b14 diode B14 DIODE DIODE B14 PDF