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    MARKING ANW Search Results

    MARKING ANW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING ANW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking


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    I03ff. 169ff. PDF

    JE800

    Abstract: No abstract text available
    Text: SIEM ENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 0.1 typ CM h* CO 0.18 0.12 Cathode/Collector marking O I Q. 0.4 SFH 4290 Cathode/Collector GPL06724 Collector Emitter GPLQ6880


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    GPL06724 GPLQ6880 OHF00360 JE800 PDF

    Q62702-P1610

    Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
    Text: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1


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    fpl06867 fplf6867 OHF01530 IPCE/IPCE25o OHF01528 OHF01524 Q62702-P1610 Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 PDF

    siemens SFH nm

    Abstract: I03f
    Text: SIEMENS GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAIAs Infrared Emitter in SMT Package 3 < o0 a 3.0 0.1 typ 0.18 J | I 0.12 / JO .6 0.4 SFH 421 TO PLEDq Cathode/Collector Approx. weight 0.03 g Collector SFH 421 SFH 426 GPL06724 Emitter Collector/Cathode marking


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    GPL06724 I03ff. 169ff. siemens SFH nm I03f PDF

    e210882 manual

    Abstract: rtl8102el RTL8102 DG945GCLF Intel Desktop Board E210882 d33025* manual e210882 intel E210882 manual intel desktop board e210882 manual intel desktop board d33025
    Text: Intel Desktop Board DG945GCLF Product Guide Order Number: E35045-001 Revision History Revision -001 Revision History First release of the Intel® Desktop Board DG945GCLF Product Guide Date April 2008 If an FCC declaration of conformity marking is present on the board, the following statement applies:


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    DG945GCLF E35045-001 e210882 manual rtl8102el RTL8102 DG945GCLF Intel Desktop Board E210882 d33025* manual e210882 intel E210882 manual intel desktop board e210882 manual intel desktop board d33025 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified


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    GE006643 PDF

    bpw filter

    Abstract: 34FAS BPW 34 FAS
    Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT Silicon PIN Photodiode with Daylight Filter New: in SMT BPW 34 FA BPW 34 FAS LO r*- o to o o 0 Cathode marking ,4.0, spacing Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GE006643


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    GE006643 GE006863 bpw filter 34FAS BPW 34 FAS PDF

    e210882 motherboard manual

    Abstract: e210882 manual e210882 motherboard manual english d33025 front panel header d33025* manual manual intel desktop board d33025 manual intel desktop board e210882 Intel Desktop Board E210882 intel e210882 d33025 manual
    Text: Intel Desktop Board DP35DP Product Guide Order Number: D87462-001 Revision History Revision -001 Revision History First release of the Intel® Desktop Board DP35DP Product Guide Date April 2007 If an FCC declaration of conformity marking is present on the board, the following statement applies:


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    DP35DP D87462-001 DP35DP e210882 motherboard manual e210882 manual e210882 motherboard manual english d33025 front panel header d33025* manual manual intel desktop board d33025 manual intel desktop board e210882 Intel Desktop Board E210882 intel e210882 d33025 manual PDF

    p945

    Abstract: transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945
    Text: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 B 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6


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    feo06643 GEO06643 OHF00080 OHF00081 OHF00082 OHF01402 p945 transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945 PDF

    GEO06075

    Abstract: GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104
    Text: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BP 104 F BP 104 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8


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    feo06075 feo06861 GEO06075 GEO06861 OHFD1781 OHF01778 OHF00082 OHF01402 GEO06075 GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104 PDF

    E9087

    Abstract: GEO06643 GEO06863 GEO06916 Q62702-P1129 Q62702-P1829 Q62702-P463 BPW 34 FAS
    Text: feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 FA BPW 34 FAS BPW 34 FAS E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter


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    feo06075 E9087) GEO06643 OHF00080 OHF00081 OHF00082 OHF01402 E9087 GEO06643 GEO06863 GEO06916 Q62702-P1129 Q62702-P1829 Q62702-P463 BPW 34 FAS PDF

    GEO06643

    Abstract: Q62702-P76
    Text: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 33 0.8 0.6 Silizium-Fotodiode Silicon Photodiode 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 . 5˚ Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g


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    feo06643 GEO06643 OHF00073 OHF01065 OHF00075 OHF01402 GEO06643 Q62702-P76 PDF

    Fotodiode

    Abstract: GEO06075 GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104FS BP104F
    Text: Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT BP 104 F BP 104 FS BP 104 F BP 104 FS Wesentliche Merkmale • Speziell geeignet für Anwendungen bei 950 nm • Kurze Schaltzeit typ. 20 ns • DIL-Plastikbauform mit hoher Packungsdichte


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    GEO06075 GEO06861 Fotodiode GEO06075 GEO06861 OHFD1781 Q62702-P1646 Q62702-P84 BP104FS BP104F PDF

    OSRAM IR emitter IRL

    Abstract: GEOY6391 OHFD1422 Q68000-A7852
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A


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    Q68000-A7852 OSRAM IR emitter IRL GEOY6391 OHFD1422 Q68000-A7852 PDF

    GEOY6391

    Abstract: OHFD1422 LPT80 LPT IC
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant LPT 80 A Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit


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    Q68000A7y GEOY6391 OHFD1422 LPT80 LPT IC PDF

    GEOY6972

    Abstract: Q62702-P1794 Q62702-P5035 lichtschranke 2400FA MARKING CODE FA
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 2400 SFH 2400 FA SFH 2400 SFH 2400 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 2400 und bei


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    PDF

    M673-Q1R1-1

    Abstract: GPLY6928 M673-R1 Q62703-Q4901 LWM673 M673-R1S1-1 LW M673
    Text: Hyper Mini TOPLED White Hyper-Bright LED LW M673 Besondere Merkmale • Gehäusetyp: weißes SMT Gehäuse • Besonderheit des Bauteils: kleine Bauform für Anwendungen mit wenig Platzbedarf • Farbort: x = 0,32, y = 0,31 nach CIE 1931 weiß • typische Farbtemperatur: 7300 K


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    3000/Rolle, 12000/Rolle, OHLP0978 3000/reel, 12000/reel, OHA00225 M673-Q1R1-1 GPLY6928 M673-R1 Q62703-Q4901 LWM673 M673-R1S1-1 LW M673 PDF

    TMC-P

    Abstract: DIN 41652 part 2 DIN 41652 part 1
    Text: +0,2 31 -0,4 Verpackt in Tray Verpackungseinheit 32 Stck +0,2 +0,2 tray packaging packaging unit 32 pcs 14,8 13,3 25 ±0,1 28 138 max. 0,6 3 x 28 = 84 8,25 12,6 ±0,3 16,8 Pin 1 36 +0,3 7 x 36 = 252 5,8 325 max. Anwendungsbeispiel / example of use Bolzen / bolt


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    TMC-P-09-EE-SV-Standard-BA8-ZV TMC-P DIN 41652 part 2 DIN 41652 part 1 PDF

    din 7984

    Abstract: DIN 41652 part 2 1am3 marking m3 transistor DIN 41652 part 3 DIN 41652
    Text: +0,2 39,3 -0,4 Verpackt in Tray Verpackungseinheit 24 Stck tray packaging packaging unit 24 pcs 13,8 13,3 138 max. 33,3 ±0,1 28 0,6 3 x 28 = 84 8 -0,2 12,6 ±0,3 24,75 -0,2 Pin 1 46,2 6,3 -0,25 5 x 46,2 = 231 Mutter / nut Bolzen / bolt 325 max. Anwendungsbeispiel / example of use


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    TMC-S-15-EE-SV-Euro-BA8-ZV din 7984 DIN 41652 part 2 1am3 marking m3 transistor DIN 41652 part 3 DIN 41652 PDF

    DIN 41652 part 1

    Abstract: No abstract text available
    Text: 53 ±0,3 Verpackt in Tray Verpackungseinheit 20 Stck +0,2 +0,2 tray packaging packaging unit 20 pcs 13,3 14,8 47 ±0,1 28 138 max. 0,6 3 x 28 = 84 8,25 12,6 ±0,3 38,9 58 Pin 1 +0,3 4 x 58 = 232 5,8 325 max. Bolzen / bolt Anwendungsbeispiel / example of use


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    TMC-P-25-EE-SV-Standard-BA8-ZV DIN 41652 part 1 PDF

    din 7984

    Abstract: DIN 41652 part 1 din 74-b tmc-p-09 ERNI TMC-P-09 DIN 41652 part 3
    Text: +0,2 31 -0,4 Verpackt in Tray Verpackungseinheit 32 Stck +0,2 +0,2 tray packaging packaging unit 32 pcs 13,8 13,3 25 ±0,1 28 138 max. 0,6 3 x 28 = 84 8,25 12,6 ±0,3 16,8 Pin 1 +0,3 36 5,8 7 x 36 = 252 Bolzen / bolt Anwendungsbeispiel / example of use Sonstige Angaben siehe Zeichnung 204630 / Additional inications according to drawing 204630


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    TMC-P-09-EE-SV-Euro-BA8-ZV din 7984 DIN 41652 part 1 din 74-b tmc-p-09 ERNI TMC-P-09 DIN 41652 part 3 PDF

    ERNI TMCS 9

    Abstract: No abstract text available
    Text: +0,2 Verpackt in Tray Verpackungseinheit 16 Stck 69,5 -0,4 54,95 -0,2 13,8 Pin 1 73,5 3 x 73,5 = 220,5 6,3 -0,25 13,3 63,5 ±0,1 28 138 max. 0,6 3 x 28 = 84 8 -0,2 Mutter / nut Bolzen / bolt Anwendungsbeispiel / example of use 325 max. Sonstige Angaben siehe Zeichnung 204630 / Additional inications according to drawing 204630


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    TMC-S-37-EE-SV-Euro-BA8-ZV ERNI TMCS 9 PDF

    Untitled

    Abstract: No abstract text available
    Text: • p w r t f af M akrnl CofparaBon t r i b dritoarad on _ • S w ift to Mt ta ba rtirlrm f. iwraduead or uaad. - *-* •-“- y - -*-* to g m M to M o a t to • or In part tar Manufatto» ar aaia to anwana amar M i tmptoial — I 4


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    HK4748 L717TW L717TWC27W2P PDF