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    MARKING A3 SOT23 Search Results

    MARKING A3 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy

    MARKING A3 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mark a3 sot23

    Abstract: MARKING A3 sot23 KDS181
    Text: SEMICONDUCTOR KDS181 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS181 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KDS181 OT-23 mark a3 sot23 MARKING A3 sot23 KDS181

    ISS181

    Abstract: 1SS181 MARKING A3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE


    Original     		PDF OT-23 1SS181 OT-23 100mA ISS181 ISS181 1SS181 MARKING A3

    smd sot23 marking A3

    Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		PDF CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 smd sot23 marking A3 smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3

    Untitled

    Abstract: No abstract text available
    Text: 1SS181 Switching Diodes SOT-23 1. CATHODE 2. CATHODE 3. ANODE Features — — Low forward voltage : VF 3 =0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: A3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol


    Original     		PDF 1SS181 OT-23 100mA

    1SS181

    Abstract: No abstract text available
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Ta = 25OC


    Original     		PDF 1SS181 OT-23 100mA 1SS181

    marking CODE A3

    Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
    Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features x Small package x Low forward voltage x Fast reverse recovery time x Small total capacitance 1. CATHODE 2. CATHODE 3. ANODE Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application


    Original     		PDF 1SS181 OT-23 100mA marking CODE A3 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


    Original     		PDF OT-23 1SS181 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


    Original     		PDF CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302

    smd diode marking A3 sot23

    Abstract: DIODE smd marking A3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2 High-Speed Switching Dual Diodes, Common Anode


    Original     		PDF ISO/TS16949 CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 smd diode marking A3 sot23 DIODE smd marking A3

    Si2303DS

    Abstract: A3 MARKING CODE
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303DS O-236 OT-23) S-49557--Rev. 27-Apr-98 A3 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303DS O-236 OT-23) 08-Apr-05

    Si2303DS

    Abstract: A3 MARKING CODE
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303DS O-236 OT-23) 18-Jul-08 A3 MARKING CODE

    Vishay diodes code marking

    Abstract: Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab
    Text: VISHAY Vishay Semiconductors Marking of Diodes 8 7 6 5 GMDA05-6 Pin 1 1 2 3 4 18954 18583 Figure 4. SO-8 Figure 1. DO-214 L4 A3 View from top R9 F5 Date code: R = Year 9 = Month Cathode band Type code Date code 18920 Figure 5. SOD-123 Type code View from top


    Original     		PDF GMDA05-6 DO-214 OD-123 LLP75-6A OD-323 DO-219AB) 28-Apr-04 BZW03C27 DO-41 OD-64 Vishay diodes code marking Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab

    Untitled

    Abstract: No abstract text available
    Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2303ADS O-236 OT-23) Si2303DS S-20213â 01-Apr-02

    Philips MARKING CODE

    Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
    Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked


    Original     		PDF OT143, OT323, OT343, OT363, OD110, OD323 OD523 BF992 PMBF4416A BF510 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363

    Untitled

    Abstract: No abstract text available
    Text: BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 45V   IC = 100mA high Collector Current   PD = 435mW Power Dissipation  0.48mm package footprint, 16 times smaller than SOT23  Moisture Sensitivity: Level 1 per J-STD-020


    Original     		PDF BC847BFA DFN0806 100mA 435mW J-STD-020 MIL-STD-202, X2-DFN0806-3 BC857BFA DS36019

    Untitled

    Abstract: No abstract text available
    Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V   IC = -100mA high Collector Current   PD = 435mW Power Dissipation  0.48mm package footprint, 16 times smaller than SOT23  Moisture Sensitivity: Level 1 per J-STD-020


    Original     		PDF BC857BFA DFN0806 -100mA 435mW J-STD-020 BC847BFA MIL-STD-202, AEC-Q101 BC857FA DS36018

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 40V   IC = 200mA high Collector Current      PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile


    Original     		PDF MMBT3904FA DFN0806 200mA 435mW MMBT3906FA AEC-Q101 X2-DFN0806-3 J-STD-020 DS36016

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V   IC = -200mA high Collector Current      PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile


    Original     		PDF MMBT3906FA DFN0806 -200mA 435mW MMBT3904FA AEC-Q101 X2-DFN0806-3 J-STD-020 DS36017

    UL26

    Abstract: 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations
    Text: USBLC6-2 Very low capacitance ESD protection Features • ■ ■ ■ ■ ■ 2 data lines protection Protects VBUS Very low capacitance: 3.5 pF max. Very low leakage current: 150 nA max. SOT-666 and SOT23-6L packages RoHS compliant SOT23-6L USBLC6-2SC6 Benefits


    Original     		PDF OT-666 OT23-6L OT23-6L OT-666 UL26 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations

    Untitled

    Abstract: No abstract text available
    Text: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .


    Original     		PDF DTA114EM/EE/EUA/ECA/ESA OT523 /SOT323/SOT23 OT-723 OT-523 S1402004

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    JR MARKING

    Abstract: No abstract text available
    Text: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value


    OCR Scan     		PDF IMBD4448 OT-23, OT-23 JR MARKING

    marking pk sot23

    Abstract: Diode BAV99 SOT23
    Text: Surface Mount Switching Diodes 350mW Switching Diodes/SOT23 Type Number Marking Code* Peak Reverse Voltage Maximum Reverse Current @ 25°C LL > vR v <§ U. Ir > PRV Maximum Forward Voltage Drop Capacitance r = V F = 0 Reverse Max. Power Pin Identity Recovery Dissipation See Figs.


    OCR Scan     		PDF 350mW Diodes/SOT23 BAS16 BAV70 BAV99 BAW56 BAL99 IMBD4148 IMBD4448 BAV100 marking pk sot23 Diode BAV99 SOT23