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    MARKING A19A Search Results

    MARKING A19A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING A19A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P6SBMJ24A

    Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current


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    PDF A40CA 5SCMJ120CA 5SCMJ130CA 5SCMJ150CA 5SCMJ160CA 5SCMJ170CA 5SCMJ180CA 5SCMJ200CA P6SBMJ24A B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a

    B14A equivalent

    Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse


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    PDF 11ACE TVSP05PT OT-23 LTVSJ12ESPT LTVSJ15ESPT SC-79 B14A equivalent zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A

    Untitled

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16 54


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    PDF MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC1M32 1Mx32,

    Untitled

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    PDF MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC1M32 single120 HIP-66

    EN29SL160

    Abstract: cFeon EN
    Text: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all


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    PDF EN29SL160 EN29SL160 cFeon EN

    AS8FLC1M32BQT-120/Q

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    PDF AS8FLC1M32 100ns 120ns I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16 AS8FLC1M32BQT-120/Q

    Untitled

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    PDF AS8FLC1M32 100ns 120ns I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16

    Untitled

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    PDF AS8FLC1M32 100ns 120ns I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16

    EN29LV160BT

    Abstract: cFeon EN29LV160BB EN29LV160BB cFeon EN29LV160 cFeon EN29LV160B cFeon Flash chip
    Text: EN29LV160B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    PDF EN29LV160B EN29LV160BT cFeon EN29LV160BB EN29LV160BB cFeon EN29LV160 cFeon EN29LV160B cFeon Flash chip

    Untitled

    Abstract: No abstract text available
    Text: EN29LV160B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    PDF EN29LV160B

    Untitled

    Abstract: No abstract text available
    Text: FLASH PRELIMINARY AS8FLC1M32A Hermetic, Multi-Chip Module MCM FIGURE 1: PIN ASSIGNMENT (Top View) •      OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 59


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    PDF AS8FLC1M32A I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16 I/O17 I/O18

    cFeon EN29LV160BB

    Abstract: cfeon en29lv160bt EN29LV160BT EN29LV160BB cFeon F
    Text: EN29LV160B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    PDF EN29LV160B cFeon EN29LV160BB cfeon en29lv160bt EN29LV160BT EN29LV160BB cFeon F

    Untitled

    Abstract: No abstract text available
    Text: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10


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    PDF AS8FLC1M32 MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC1M32B

    SMD MARKING CODE WE3

    Abstract: 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX
    Text: FLASH AS8FLC1M32 • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10 I/O11


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    PDF AS8FLC1M32 I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16 I/O17 I/O18 SMD MARKING CODE WE3 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX

    S71GL-N

    Abstract: Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL-J S71PL256N PSRAM A20-A18 sram 256mb 64X
    Text: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and


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    PDF S71PL-J S71GL-A S71GL-N S71PL-J. Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL256N PSRAM A20-A18 sram 256mb 64X

    S71PL256N

    Abstract: top mark e5 S29PL127J S71GL-N S71PL032J40 S71PL-J TSB064-64-ball 16SRAM
    Text: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and


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    PDF S71PL-J S71GL-A S71GL-N S71PL-J. 256M/128/64/32 S71PL256N top mark e5 S29PL127J S71PL032J40 TSB064-64-ball 16SRAM

    A17a

    Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
    Text: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time


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    PDF 2002/95/EC A17a diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking

    sram 256mb 64X

    Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
    Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


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    PDF S71PL-J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K sram 256mb 64X S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL256N S71PL127J

    transistor w048

    Abstract: A31b SOT-23 sot-23-5 code 9L a32b R3111Q271 R3111N402
    Text: R3111x SERIES LOW VOLTAGE DETECTOR NO.EA-056-130722 OUTLINE The R3111x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low supply current, which can be operated at an extremely low voltage and is used for system reset as an example.


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    PDF R3111x EA-056-130722 Room403, Room109, 10F-1, transistor w048 A31b SOT-23 sot-23-5 code 9L a32b R3111Q271 R3111N402

    MICRON mcp

    Abstract: 31136 S71NS064JA0 S71NS128JA0
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics


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    PDF S71NS128JA0/S71NS064JA0 16-Bit) 31136A1 MICRON mcp 31136 S71NS064JA0 S71NS128JA0

    31136

    Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics


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    PDF S71NS128JA0/S71NS064JA0 16-Bit) 31136A2 31136 S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002

    31136

    Abstract: S71NS064JA0BFW21
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM PRELIMINARY Datasheet Distinctive Characteristics


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    PDF S71NS128JA0/S71NS064JA0 16-Bit) Am29F Am29LV 31136A3 31136 S71NS064JA0BFW21

    transistor marking A21

    Abstract: No abstract text available
    Text: Renesas LSIs Preliminary M6MGB/T64BS8BWG-P Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)


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    PDF M6MGB/T64BS8BWG-P 864-BIT 304-WORD 16-BIT) 608-BIT 288-WORD M6MGB/T64BS8BWG-P 64M-bit 67-pin transistor marking A21

    C55-C57

    Abstract: E491 C-491
    Text: 10 VIEW ON MATING SIDE ROW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 E B B B B B B B B B B B B D B B B C B B B B B B B B B B B B B B B B A B B B B B B B B B B B B L1 B CONTACTI 5.75 L2 QUAN. 4.30 114 22 23 u B B B B B B B B B B B B B B B 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 d6 57 58 59 60 61 62 63 64 65 66 PIN


    OCR Scan
    PDF SD-85801-008 PS-85801-002 SD-85801- C55-C57 E491 C-491