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    MARKING A17 Search Results

    MARKING A17 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING A17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1718

    Abstract: KA1718 k a1718 A-1718 KA1718Y KTA1718L A1718Y KTA1718
    Text: SEMICONDUCTOR KTA1718L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1718 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1718 KTA1718L 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :


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    PDF KTA1718L A1718 a1718 KA1718 k a1718 A-1718 KA1718Y KTA1718L A1718Y KTA1718

    a1703

    Abstract: TO-126 KTA1703
    Text: SEMICONDUCTOR KTA1703 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1703 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1703 KTA1703 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :


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    PDF KTA1703 O-126 A1703 a1703 TO-126 KTA1703

    a1700

    Abstract: Ka1700 A1700 to-126 KTA1700
    Text: SEMICONDUCTOR KTA1700 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1700 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1700 KTA1700 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :


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    PDF KTA1700 O-126 A1700 a1700 Ka1700 A1700 to-126 KTA1700

    a1704

    Abstract: TO126 package TO126 KTA1704 TO-126
    Text: SEMICONDUCTOR KTA1704 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1704 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1704 KTA1704 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :


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    PDF KTA1704 O-126 A1704 a1704 TO126 package TO126 KTA1704 TO-126

    a1718

    Abstract: KA1718 k a1718 KTA1718D A-1718 KA1718Y a1718y A17-18 hFE kec
    Text: SEMICONDUCTOR KTA1718D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1718 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1718 KTA1718D 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :


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    PDF KTA1718D A1718 a1718 KA1718 k a1718 KTA1718D A-1718 KA1718Y a1718y A17-18 hFE kec

    A1725

    Abstract: k a1725 KTA1725
    Text: SEMICONDUCTOR KTA1725 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 A1725 O 3 2002. 7. 11 216 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1725 KTA1725 3 hFE Grade O R,O 4 Lot No.


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    PDF KTA1725 O-220IS A1725 A1725 k a1725 KTA1725

    A1705

    Abstract: transistor a1705 KA1705 KTA1705
    Text: SEMICONDUCTOR KTA1705 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1705 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1705 KTA1705 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :


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    PDF KTA1705 O-126 A1705 A1705 transistor a1705 KA1705 KTA1705

    A1715

    Abstract: TO126 package Ka1715 hFE kec KTA1715 TO-126
    Text: SEMICONDUCTOR KTA1715 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1715 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1715 KTA1715 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009


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    PDF KTA1715 O-126 A1715 A1715 TO126 package Ka1715 hFE kec KTA1715 TO-126

    A1709

    Abstract: TO126 package KTA1709 TO126
    Text: SEMICONDUCTOR KTA1709 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1709 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1709 KTA1709 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009


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    PDF KTA1709 O-126 A1709 A1709 TO126 package KTA1709 TO126

    MKK400-D-25-01

    Abstract: B25667A4197A375 siemens 230 96 B25667-A4467-A3 MKK400-D-12 3x82 A2757 A4247 MKK415-D-20 MKK480-D-20-01
    Text: Siemens Matsushita Components Phase Cap MKK-Capacitor B25667-A2157-A175 MKK230-I-2,5-01 Characteristics CN QN UN fN IN tanδ 0 Marking 1x150 µF +10/-5% 2.5 kvar AC 230 V 50 Hz 10.8 A 2 ⋅ 10-4 Maximum ratings Umax Imax îs du/dt max (du/dt)s 1.1 ⋅ UN (8 hours daily)


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    PDF B25667-A2157-A175 MKK230-I-2 1x150 -25/D MKK400-D-25-01 B25667A4197A375 siemens 230 96 B25667-A4467-A3 MKK400-D-12 3x82 A2757 A4247 MKK415-D-20 MKK480-D-20-01

    Untitled

    Abstract: No abstract text available
    Text: PhaseCap B25667-A5217-A175 MKK525-I-18,6-01 Characteristics CN UN fN QN IN tan δ 0 1x 215 AC 525 50 18,6 1x 36 µF ±5 % V Hz 60 Hz kvar 22,3 kvar A 43 A Marking 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of


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    PDF B25667-A5217-A175 MKK525-I-18 6797-J13 439-BM12 C61014-A0508-A401 -40/D

    P6SBMJ24A

    Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current


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    PDF A40CA 5SCMJ120CA 5SCMJ130CA 5SCMJ150CA 5SCMJ160CA 5SCMJ170CA 5SCMJ180CA 5SCMJ200CA P6SBMJ24A B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a

    DIN439

    Abstract: No abstract text available
    Text: Siemens Matsushita Components Phase Cap MKK-Capacitor B25667-A2157-A175 MKK230-I-2,5-01 Characteristics CN QN UN fN IN tanδ 0 Marking 1x150 µF +10/-5% 2.5 kvar AC 230 V 50 Hz 10.8 A 2 ⋅ 10-4 Maximum ratings Umax Imax îs du/dt max (du/dt)s 1.1 ⋅ UN (8 hours daily)


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    PDF B25667-A2157-A175 MKK230-I-2 1x150 -25/D DIN439

    5800c

    Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
    Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V


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    PDF TM5500/TM5800 TM5800-933 CoolRun80 5800C093310 TM5800-867 5800C086710 TM5800-800 5800A080010 TM5500-800 5800c bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800

    B14A equivalent

    Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse


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    PDF 11ACE TVSP05PT OT-23 LTVSJ12ESPT LTVSJ15ESPT SC-79 B14A equivalent zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A

    Untitled

    Abstract: No abstract text available
    Text: PhaseCap B25667-A5147-A175 MKK525-I-12,5-01 4RB5 125-5 AA 52 Characteristics CN UN fN QN IN tan δ 0 1x 144 AC 525 50 12,5 1x 24 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 29 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of


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    PDF B25667-A5147-A175 MKK525-I-12 6797-J13 439-BM12 C61014-A0505-A401 -40/D

    kvar

    Abstract: B25667-A2207-A175
    Text: PhaseCap B25667-A2207-A175 MKK230-I-3,3-01 4RB5 033-5 AA 23 Characteristics CN UN fN QN IN tan δ 0 1x 200 AC 230 50 3,3 1x 15 µF ±5 % V Hz kvar A Marking 60 Hz 4 kvar 18 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of


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    PDF B25667-A2207-A175 MKK230-I-3 6797-J13 439-BM12 C61014-A0505-A401 kvar B25667-A2207-A175

    Untitled

    Abstract: No abstract text available
    Text: PhaseCap B25667-A2317-A175 MKK230-I-5-01 4RB5 052-5 AA 23 Characteristics CN UN fN QN IN tan δ 0 1x 313 AC 230 50 5,2 1x 23 µF ±5 % V Hz kvar A Marking 60 Hz 6,2 kvar 28 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of


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    PDF B25667-A2317-A175 MKK230-I-5-01 6797-J13 439-BM12 C61014-A0505-A401 -40/D

    DIN IEC 249

    Abstract: No abstract text available
    Text: PhaseCap B25667-A3247-A175 MKK400-I-12,5-01 4RB5 125-5 AA 40 Characteristics CN UN fN QN IN tan δ 0 1x 249 AC 400 50 12,5 1x 31 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 37 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of


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    PDF B25667-A3247-A175 MKK400-I-12 6797-J13 439-BM12 C61014-A0505-A401 -40/D DIN IEC 249

    block diagram of crusoe processor

    Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
    Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz


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    PDF TM55E/TM58E TM58EX-933 58EXAE093321 TM58EL-800 58ELAD080021 TM55EL-667 55ELAC066721 TM55E/TM58E block diagram of crusoe processor bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667

    hysf643

    Abstract: No abstract text available
    Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed


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    PDF HY62SF16403A 256Kx16bit HYSF643A 100ns 120ns hysf643

    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


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    PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    A1727

    Abstract: A1727 transistor
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for


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    PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 A1727 transistor

    A1727 transistor

    Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V


    OCR Scan
    PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 C1000 A1727 transistor transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63