C2C36
Abstract: VPW09197 BAS21U SC74
Text: BAS21U Silicon Switching Diode Array 5 4 6 For high-speed switching applications Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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Original
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BAS21U
VPW09197
EHA07291
EHB00028
Aug-07-2001
C2C36
VPW09197
BAS21U
SC74
|
PDF
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marking 6c1
Abstract: BAS16U SC74
Text: BAS16U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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Original
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BAS16U
VPW09197
EHA07291
Jul-06-2001
EHB00025
EHB00022
marking 6c1
BAS16U
SC74
|
PDF
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BAV70U
Abstract: SC74 10325v
Text: BAV70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration
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Original
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BAV70U
VPW09197
EHA07182
Jul-06-2001
EHB00068
EHB00065
BAV70U
SC74
10325v
|
PDF
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BAW56U
Abstract: SC74
Text: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration
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Original
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BAW56U
VPW09197
EHA07288
Jun-29-2001
EHB00093
EHB00090
BAW56U
SC74
|
PDF
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BAS79A
Abstract: BAS79B BAS79C BAS79D VPS05163 Marking 2c1
Text: BAS79A.BAS79D Silicon Switching Diodes Switching applications 4 High breakdown voltage Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C
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Original
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BAS79A.
BAS79D
VPS05163
EHA00005
BAS79A
BAS79B
BAS79C
OT223
BAS79A
BAS79B
BAS79C
BAS79D
VPS05163
Marking 2c1
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PDF
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BAW56S
Abstract: 6A1 diode VPS05604
Text: BAW56S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Common anode Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration
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Original
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BAW56S
VPS05604
EHA07288
OT363
Jul-05-2001
EHB00093
EHB00090
BAW56S
6A1 diode
VPS05604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAV 70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration
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Original
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VPW09197
EHA07182
SC-74
Oct-07-1999
EHB00068
EHB00065
|
PDF
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BAV99V
Abstract: No abstract text available
Text: BAV 99U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Connected in series Internal galvanic isolated diodes in one package 3 C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99U A7s Pin Configuration
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Original
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VPW09197
EHA07287
SC-74
Oct-08-1999
EHB00078
EHB00075
BAV99V
|
PDF
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VPS05604
Abstract: A7s marking diode
Text: BAV 99S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Connected in series Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration
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Original
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VPS05604
EHA07287
OT-363
Oct-08-1999
EHB00078
EHB00075
VPS05604
A7s marking diode
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PDF
|
6A1 diode
Abstract: No abstract text available
Text: BAW 56U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Common anode Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration
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Original
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VPW09197
EHA07288
SC-74
Oct-08-1999
EHB00093
EHB00090
6A1 diode
|
PDF
|
SC74
Abstract: JSs diode
Text: BAS 21U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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Original
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VPW09197
EHA07291
SC-74
Apr-16-1999
EHB00029
EHB00027
SC74
JSs diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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Original
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VPW09197
EHA07291
SC-74
Apr-21-1999
EHB00025
EHB00022
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PDF
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BAV99U
Abstract: SC74
Text: BAV99U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Connected in series • Internal galvanic isolated diodes 3 in one package C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99U A7s
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Original
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BAV99U
VPW09197
EHA07287
Jun-29-2001
EHB00078
EHB00075
BAV99U
SC74
|
PDF
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BAV99S
Abstract: VPS05604
Text: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s
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Original
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BAV99S
VPS05604
EHA07287
OT363
Jun-29-2001
EHB00078
EHB00075
BAV99S
VPS05604
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PDF
|
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EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
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Original
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VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
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PDF
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6A1 diode
Abstract: 7006S VPS05604
Text: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking
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Original
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70-06S
VPS05604
EHA07288
OT-363
EHB00042
EHB00043
EHB00044
EHB00045
Oct-07-1999
6A1 diode
7006S
VPS05604
|
PDF
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BAS28
Abstract: VPS05178 BAS28 JTs
Text: BAS28 Silicon Switching Diode Array 3 For high-speed switching applications Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol
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Original
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BAS28
VPS05178
EHA07008
OT143
EHB00035
EHB00036
Jul-27-2001
EHB00037
BAS28
VPS05178
BAS28 JTs
|
PDF
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6A1 diode
Abstract: BAS70-06S VPS05604
Text: BAS70-06S Silicon Schottky Diode Array 4 General-purpose diode for high-speed switching 5 6 Circuit protection Voltage clamping High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S
|
Original
|
BAS70-06S
VPS05604
EHA07288
OT363
EHB00042
EHB00043
EHB00044
EHB00045
Jul-06-2001
6A1 diode
BAS70-06S
VPS05604
|
PDF
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VPS05178
Abstract: baw100
Text: BAW 100 Silicon Switching Diode Array 3 • For high-speed switching applications • Electrical insulated diodes 4 2 1 VPS05178 3 2 4 1 EHA00006 Type Marking BAW 100 JSs Pin Configuration 1 = A1 2 = A2 3 = C2 Package 4 = C1 SOT-143 Maximum Ratings Parameter
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Original
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VPS05178
EHA00006
OT-143
EHB00142
EHB00143
Oct-08-1999
EHB00144
VPS05178
baw100
|
PDF
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A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
|
BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
|
PDF
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BAS28W
Abstract: marking JTs
Text: BAS28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT343 Maximum Ratings Parameter
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Original
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BAS28W
VPS05605
EHA07289
OT343
Jun-29-2001
EHB00037
EHB00034
BAS28W
marking JTs
|
PDF
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Q62702-A3466
Abstract: marking CODE JTS
Text: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings
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Original
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VPS05605
OT-343
Q62702-A3466
Mar-16-1998
EHB00037
EHB00034
Q62702-A3466
marking CODE JTS
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PDF
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SOT JPs
Abstract: VPS05178 EHA07008
Text: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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VPS05178
EHA07008
OT-143
EHN00019
100ns,
Oct-08-1999
EHB00102
EHB00104
EHB00103
SOT JPs
VPS05178
EHA07008
|
PDF
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BAT62
Abstract: VPS05178
Text: BAT62 Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2
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Original
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BAT62
VPS05178
EHA07020
OT143
Aug-23-2001
EHD07061
EHD07062
900MHz
BAT62
VPS05178
|
PDF
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