C5707
Abstract: but 607 KTC5707L c5707l IPAK
Text: SEMICONDUCTOR KTC5707L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 C5707L 607 2009. 2. 3 3 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C5707L KTC5707L 3 Lot No. 607 Revision No : 0 6
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KTC5707L
C5707L
C5707
but 607
KTC5707L
c5707l
IPAK
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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C5707
Abstract: D-PAK package DPak Package KTC5707D KTC5707D-00
Text: SEMICONDUCTOR KTC5707D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 C5707D 607 2009. 2. 3 3 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name 5707D KTC5707D 3 Lot No. 607 Revision No : 0 6 Year
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KTC5707D
C5707D
5707D
KTC5707D-00
C5707
D-PAK package
DPak Package
KTC5707D
KTC5707D-00
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C5706
Abstract: Transistor C5706 c5706 transistor c5706 equivalent transistor c5706 equivalent ktc5706 KTC5706D D-PAK package c5706 specifications
Text: SEMICONDUCTOR KTC5706D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 C5706 607 2006. 2. 13 3 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C5706 KTC5706D 3 Lot No. 607 Revision No : 0 6 Year
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KTC5706D
C5706
C5706
Transistor C5706
c5706 transistor
c5706 equivalent transistor
c5706 equivalent
ktc5706
KTC5706D
D-PAK package
c5706 specifications
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c5706
Abstract: Transistor C5706 c5706 equivalent c5706 equivalent transistor c5706 transistor c5706 specifications ktc5706 KTC5706L c5706 datasheet KEC Lot No. Year
Text: SEMICONDUCTOR KTC5706L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 C5706 607 2006. 2. 13 3 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C5706 KTC5706L 3 Lot No. 607 Revision No : 0 6 Year
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KTC5706L
C5706
c5706
Transistor C5706
c5706 equivalent
c5706 equivalent transistor
c5706 transistor
c5706 specifications
ktc5706
KTC5706L
c5706 datasheet
KEC Lot No. Year
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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marking 7T transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual NPN Digital Transistor z Pb-Free Package is Available. LUMH14NDW1T1G DEVICE MARKING AND ORDERING INFORMATION Device Marking 6 Shipping LUMH14NDW1T1G 7T 3000/Tape&Reel LUMH14NDW1T3G 7T 10000/Tape&Reel 5 4 1 2 3 SC-88 zAbsolute maximum ratings Ta=25°C
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LUMH14NDW1T1G
10000/Tape
3000/Tape
LUMH14NDW1T3G
SC-88
marking 7T transistor
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SB612
Abstract: SRK-2 RK35 6T83 WMS24 marking G3 SL16 BR10 kbl6 110 RK6-10
Text: FIND IT NEXT SB MARKING TAGS Blank or Imprinted 10 Tags Per Strip 5mm and 6mm Widths Material: Polyamide 6.6 Standard Color: White, Black Imprint Selection of Colors To simplify selection, Marking tags are indicated within a bar illustrated below in the ordering area on each terminal
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SB5/10FS
SB5/10GW
SB5/10GS
WMS12
1000/Reel
SB612
SRK-2
RK35
6T83
WMS24
marking G3
SL16
BR10
kbl6 110
RK6-10
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Untitled
Abstract: No abstract text available
Text: FREQUENCY VCO 1675 – 3500 MHz Specification vlb1675 rev-W2 Electrical Specifications Comments Mechanical parameters Marking F re qu en c y VCO 1675 – 3500 MHz February 7th, 2005 Specification vlb1675 (rev-W2) ELECTRICAL SPECIFICATIONS Parameter Max.
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vlb1675
MHz00
1675MHz
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LM309K
Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Text: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.
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MIL-STD-883
MIL-STD-883*
MIL-STD-883.
LM309K
nsc marking
QML MARKING DETAILS
40 lead ceramic flatpack
ALPHA YEAR DATE CODE
5962-9553601QPA
LM7171AMJ-QML
top marking codes
CERAMIC FLATPACK
ALPHA YEAR CODE
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tvs sacb5
Abstract: diode SKE 1 SACB5.0
Text: SACB SERIES LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE- 5.0 - 50 Volts 500 watt Peak Pulse Power SACB PART NUMBER Marking Code SACB5.0 SACB6.0 SACB7.0 SACB8.0 SACB8.5 SACB10 SACB12 SACB15 SACB18 SACB22 SACB26 SACB30 SACB36 SACB45 SACB50
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SACB10
SACB12
SACB15
SACB18
SACB22
SACB26
SACB30
SACB36
SACB45
SACB50
tvs sacb5
diode SKE 1
SACB5.0
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BC648B
Abstract: No abstract text available
Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking
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BC847B
BC857B.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
BC648B
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON Roederstein T Keramik-Kondensatoren fur die professionelle Elektronik Ceramic Capacitors for professional electronics Keram ische Scheibenkondensatoren, Klasse 2 C eram ic disc capacitors, class 2 Ausfuhrung / Design: Kennzeichnung / Marking:
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V
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0007fci40
--SFH233
aZ3b32b
0007fc
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Untitled
Abstract: No abstract text available
Text: BCX17 BCX18 > ÌL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking PACKAGE OUTLIN E D ETAILS ALL DIM EN SION S IN mm BCX17 = TI BCX18 = T2 3.0 2.8 0.14 0.48 7T Ö 38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 _2 .00_
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BCX17
BCX18
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Untitled
Abstract: No abstract text available
Text: EIN UN TERN EHM EN VON Roederstein Keramik-Kondensatoren fiir die Untertiaftungs-Elektronik Ceramic Capacitors for entertainment electronics Keram ische Scheibenkondensatoren, Klasse 1 B C eram ic disc capacitors, class 1 B Ausfiihrung / Design: Kennzeichnung / Marking:
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sst211 sot-143
Abstract: SST211 SST215 SST213 TZ marking sot143 fet
Text: TE L E D Y NE BÖE » COMPONENTS *7Tfa [s lt2 \5 Z m flW b ü S Q0üb4Sb 2 SST211, SST213 SST215 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION SOT-143 Pkfl. Package 24) Topside Device Marking Description F’reparation for shipment
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SST211,
SST213
SST215
OT-143
SST21Ã
SST213
10Vt70ft
SST211
SST215
sst211 sot-143
TZ marking
sot143 fet
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Untitled
Abstract: No abstract text available
Text: THICK FILM MOLDED DIPs 8, 14, 16, 18 AND 20 PIN • Compatible with automatic insertion equipment ■ Superior package integrity ■ Marking on contrasting background for permanent identification Model 4100R Series B Resistor Networks Electrical Characteristics
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4100R
100ppm/Â
250ppm/Â
50ppm/Â
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6-BT
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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Q62702-A1017
OT-143
flS35bOS
6-BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
Q62702-F1063
OT-23
235b05
G122211
900MHz
235fc
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marking R1P
Abstract: PN2222A ITT FDCT2222A MMST2222A PN2222A SST2222A T100 T106 T116 T146
Text: Transistors NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •P ackage, marking and packaging specifications
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2222A/SST2222A/MMST2222A/RXT2222A/PN2222A
UMT2907A/SST2907A/MMST2907A
/RXT2907A/PN2907A.
UMT2222A
SST2222A
MMST2222A
FDCT2222A
PN2222A
dissipa54Â
O-220FP
marking R1P
PN2222A ITT
PN2222A
T100
T106
T116
T146
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up/xr+2320
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR
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BFG93AW
BFG93AW/X;
BFG93AW/XR
BFG93AW/X
OT343
OT343R
MSB014
up/xr+2320
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