MARKING 7N6 TRANSISTOR Search Results

MARKING 7N6 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MARKING 7N6 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
7n6 TRANSISTOR Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate	Original	MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, 7n6 TRANSISTOR Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60E H07N60F marking code PB	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

7n6 TRANSISTOR

Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

Original

MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, 7n6 TRANSISTOR Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60E H07N60F marking code PB

PDF