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    MARKING 7N6 MOSFET Search Results

    MARKING 7N6 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 7N6 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking 7n6 Mosfet

    Abstract: marking 7n6 7n6 diode zxmn6a07f
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for


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    PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet marking 7n6 7n6 diode zxmn6a07f

    Marking 7n6 Mosfet

    Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
    Text: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits


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    PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6

    7n6 TRANSISTOR

    Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


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    PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, 7n6 TRANSISTOR Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60E H07N60F marking code PB

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


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    PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC uni00 ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet

    ZXMN6A07Z

    Abstract: ZXMN6A07ZTA
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07Z ZXMN6A07ZTA ZXMN6A07Z ZXMN6A07ZTA

    0018g

    Abstract: ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀; ID=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


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    PDF ZXMN6A07Z ZXMN6A07ZTA 0018g ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


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    PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet

    Marking 7n6 Mosfet

    Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 7N6-04 Marking 7n6 Mosfet marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F

    ZXMN6A07Z

    Abstract: ZXMN6A07ZTA 7n6 diode
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07Z ZXMN6A07ZTA ZXMN6A07Z ZXMN6A07ZTA 7n6 diode

    ZXMN6A07F

    Abstract: Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F Marking 7n6 Mosfet

    Marking 7n6 Mosfet

    Abstract: No abstract text available
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet

    Marking 7n6 Mosfet

    Abstract: 7n6 diode
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


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    PDF ZXMN6A07Z ZXMN6A07ZTA SEMI-04 Marking 7n6 Mosfet 7n6 diode

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 2.5 0.350 @ VGS= 4.5V 2.1 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


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    PDF ZXMN6A07Z 00GmbH D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


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    PDF ZXMN6A07F D-81541

    marking 7n6

    Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59
    Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


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    PDF ZXMN6A07F ZXMN6A07FTA D-81541 marking 7n6 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59