B824 transistor
Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
B824 transistor
a564 transistor
335 35K
106 16k
radial capacitor
Thomson TH 5221
transistor a564
pc 8178
T110A335J015AS
a684 transistor
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transistor a564
Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-C-39003/1
T111/T213
CSR91)
MIL-C-39003/4
CSR09)
MIL-C-39003/2
T140/T242
CSR23)
transistor a564
a564 transistor
a684 transistor
CIR 2262
transistor a684
cat 7199 ca
transistor b564
5252 f 0917
capacitor 336 35K 102
CSR 6026
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106 16k
Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
106 16k
capacitor 226 35K 022 electrolytic
335 35K
TANTALUM capacitor 685 35K
a564 transistor
T35 diode
transistor a564
B824 transistor
a684 transistor
XC 7270
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on semiconductor marking code sot
Abstract: marking 2 AW Marking transistor SOT 89 marking CODE vishay siliconix code marking marking code vishay SILICONIX SOT666 marking code diode 04 marking sc PART NUMBER MARKING
Text: Part Marking Information Vishay Siliconix DEVICE: SC-89 SOT-666 ONLY Devices SC-89 (SOT-666)1 AW Pin 1 A = Part Number Code2 W = Week Code3 NOTES: 1. Pin 1 denoted by orientation of marking. Pin 1 is lower left corner of upright text. 2. See data sheet for code.
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SC-89
OT-666
22-Mar-04
on semiconductor marking code sot
marking 2 AW
Marking transistor
SOT 89 marking CODE
vishay siliconix code marking
marking code vishay SILICONIX
SOT666
marking code diode 04
marking sc
PART NUMBER MARKING
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Untitled
Abstract: No abstract text available
Text: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA40W1200TMH
20101117c
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Untitled
Abstract: No abstract text available
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20101102b
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Untitled
Abstract: No abstract text available
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20101102b
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D6607
Abstract: MIXA40W1200TMH ic MARKING QG E72873 MIXA40W1200
Text: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA40W1200TMH
20101117c
D6607
MIXA40W1200TMH
ic MARKING QG
E72873
MIXA40W1200
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D6607
Abstract: ic MARKING QG E72873
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20101102b
D6607
ic MARKING QG
E72873
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Untitled
Abstract: No abstract text available
Text: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA10W1200TMH
20110322b
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MIXA30W1200TMH
Abstract: E72873
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20091214a
MIXA30W1200TMH
E72873
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MIXA40W1200TMH
Abstract: E72873 MiniPack2
Text: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA40W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA40W1200TMH
20091207a
MIXA40W1200TMH
E72873
MiniPack2
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Untitled
Abstract: No abstract text available
Text: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA10W1200TMH
20110322b
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MIXA10W1200TMH
Abstract: E72873
Text: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA10W1200TMH
20091214a
MIXA10W1200TMH
E72873
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Untitled
Abstract: No abstract text available
Text: MIEB 101W1200DPFEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 170 A VCE sat typ. = 1.9 V Preliminary data Part name (Marking on product) MIEB101W1200DPFEH 13, 21 1 5 9 2 6 10 19 17 15 E 72873 3 7 11 4 8 12 14, 20 Features: Application: Package: • SPT+ IGBT technology
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101W1200DPFEH
MIEB101W1200DPFEH
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Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitors RXK Features ‧ 105℃, 2,000 ~ 5,000 hours assured ‧ Low ESR, suitable for switching power supplies ‧ Smaller size with large permissible ripple current ‧ RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS
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120Hz,
120Hz0
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KP/MMKP 376
Abstract: No abstract text available
Text: KP/MMKP 376 Vishay BCcomponents AC and Pulse Metallized Polypropylene Film Capacitors KP/MMKP Radial Potted Type APPLICATIONS Where high currents and steep pulses occur. Power supplies 168x12 halfpage MARKING l C-value; tolerance; rated voltage; manufacturer’s type
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168x12
28-Feb-05
KP/MMKP 376
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62363
Abstract: 62183 62184 376 kp/mmkp KP/MMKP 376
Text: KP/MMKP 376 Vishay BCcomponents AC and Pulse Metallized Polypropylene Film Capacitors KP/MMKP Radial Potted Type APPLICATIONS Where high currents and steep pulses occur. Power supplies 168x12 halfpage MARKING l C-value; tolerance; rated voltage; manufacturer’s type
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168x12
10-Sep-03
62363
62183
62184
376 kp/mmkp
KP/MMKP 376
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G4EU
Abstract: E72873 MIXA20W1200TMH
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV
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MIXA20W1200TMH
20091127a
G4EU
E72873
MIXA20W1200TMH
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MIAA10WD600TMH
Abstract: E72873
Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = 35 A IC25 IFSM VCE sat = 2.1 V = 270 A = 18 A Part name (Marking on product) MIAA10WD600TMH
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MIAA10WD600TMH
IDAVM25=
po300V
/-15V
MIAA10WD600TMH
E72873
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: Radial Leaded Capacitors High Frequency, High Voltage Capacitors Polypropylene Dielectric Type R BZ Z Preformed Case with Epoxy Fill Physical Dielectric Material Electrode Material Lead Material Enclosure Component Marking Performance Testing Polypropylene
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100ppm
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727 Transistor power values
Abstract: No abstract text available
Text: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration
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22kfl)
BCR191S
Q62702-C2418
OT-363
727 Transistor power values
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marking BSs mosfet
Abstract: Q62702-S631
Text: BSS119 SIPMOS N Channel MOSFET • SIPMOS - enhancement mode • Drain-source voltage Vfc» = 100V • Continuous drain current / D = 0.17A • Drain-source on-resistance • Total power dissipation /%>•<«> = 6.00 P0 = 0.36W Type Marking Ordering code for
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BSS119
Q62702-S631
marking BSs mosfet
Q62702-S631
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