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    MARKING 62 ON SEMI Search Results

    MARKING 62 ON SEMI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 62 ON SEMI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    injector MOSFET driver

    Abstract: 1n06 an569 Transient Thermal Resistance MLD1N06CL
    Text: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK http://onsemi.com V BR DSS RDS(on) TYP ID MAX 62 V (Clamped) 750 mW 1.0 A R1 G R2 S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		MLD1N06CL MLD1N06CL injector MOSFET driver 1n06 an569 Transient Thermal Resistance PDF

    MLD1N06CL

    Abstract: AN569 MLD1N06CLT4 fuel injector INJECTOR injector MOSFET driver 1N06C
    Text: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK http://onsemi.com V BR DSS RDS(on) TYP ID MAX 62 V (Clamped) 750 mW 1.0 A R1 G R2 S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		MLD1N06CL MLD1N06CL/D MLD1N06CL AN569 MLD1N06CLT4 fuel injector INJECTOR injector MOSFET driver 1N06C PDF

    L2N06CL

    Abstract: 06-CL injector MOSFET driver AN569 MLD2N06CL MLD2N06CLT4 injector driver fuel injector INJECTOR
    Text: MLD2N06CL Preferred Device SMARTDISCRETESt MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK http://onsemi.com V BR DSS RDS(on) TYP ID MAX 62 V (Clamped) 400 mW 2.0 A R1 G R2 S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		MLD2N06CL MLD2N06CL MLD2N06CL/D L2N06CL 06-CL injector MOSFET driver AN569 MLD2N06CLT4 injector driver fuel injector INJECTOR PDF

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


    Original     		62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode PDF

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 PDF

    smd marking 327

    Abstract: BEP SMD ZENER SMD MARKING CODE 529 smd code marking 777 smd code marking JL smd marking VB marking 297 smd 4814 VOLTAGE REGULATOR SMD MARKING A1 MARKING CODE SMD ST 531
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 PSMA5925B to PSMA5945B Voltage regulator diodes Product specification 1998 Dec 04 Philips Semiconductors Product specification Voltage regulator diodes PSMA5925B to PSMA5945B FEATURES DESCRIPTION


    Original     		M3D168 PSMA5925B PSMA5945B PSMA5945B DO-214AC DO-214AC; OD106) OD106 smd marking 327 BEP SMD ZENER SMD MARKING CODE 529 smd code marking 777 smd code marking JL smd marking VB marking 297 smd 4814 VOLTAGE REGULATOR SMD MARKING A1 MARKING CODE SMD ST 531 PDF

    b2 diode

    Abstract: marking 62 marking code b3
    Text: CM6200 Advance Information EMI Filters with ESD Protection for Microphone Interface http://onsemi.com Description ON Semiconductor’s CM6200 is a 3x3, 8−bump EMI filter with ESD protection device for microphone interface applications in a CSP form factor, 0.4 mm pitch. The CM6200 is fully compliant with


    Original     		CM6200 567CF CM6200 CM6200/D b2 diode marking 62 marking code b3 PDF

    SMD MARKING CODE TRANSISTOR 501

    Abstract: TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857


    Original     		M3D088 BC856; BC857 BC846 BC847. BC857 BC856 BC856A BC856B SMD MARKING CODE TRANSISTOR 501 TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA62N25C N-Channel QFET MOSFET 250 V, 62 A, 35 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQA62N25C PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA62N25C N-Channel QFET MOSFET 250 V, 62 A, 35 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQA62N25C PDF

    mar 752

    Abstract: TSOP RECEIVER smd marking 393 TSOP8 VISHAY MARKING CODE IR RECEIVERS smd semiconductors on marking heimdall ir TSOP312 TSOP313
    Text: Markings Vishay Semiconductors Marking on IR Receiver Modules Company logo Datecode YWW Location All cast photomodules for example: TSOP11. TSOP12. TSOP13. TSOP311. TSOP312. TSOP313. TSOP314. V 19 223 TSOP 1238 Part no. 17078 Location All molded photomodules


    Original     		TSOP11. TSOP12. TSOP13. TSOP311. TSOP312. TSOP313. TSOP314. TSOP32. TSOP34. TSOP35. mar 752 TSOP RECEIVER smd marking 393 TSOP8 VISHAY MARKING CODE IR RECEIVERS smd semiconductors on marking heimdall ir TSOP312 TSOP313 PDF

    diode cross reference 1n914

    Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass


    Original     		M3D176 1N914 DO-35) 1N914 MAM246 DO-35; SC-40) diode cross reference 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial PDF

    diode sod* marking code 84

    Abstract: marking JL sod123 CMHZ5229B cm5 marking CMHZ5265B
    Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface


    Original     		CMHZ5221B CMHZ5267B 500mW, OD-123 CMH00 diode sod* marking code 84 marking JL sod123 CMHZ5229B cm5 marking CMHZ5265B PDF

    philips zener diode c24

    Abstract: Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG01 series SMA voltage regulator diodes Product specification Supersedes data of 2000 Feb 17 2003 Mar 06 Philips Semiconductors Product specification SMA voltage regulator diodes BZG01 series FEATURES


    Original     		M3D168 BZG01 DO-214AC /imaging/BITTING/CPL/20030424/04232003 HTML04232003/BZG01-C10 May-06-2003 philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24 PDF

    2SC5053

    Abstract: No abstract text available
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package package marking: 2SC5053; CG-*, where ★ is hFE code PC = 2Wwhen mounted on a 40x 40 x 0.7 mm ceramic substrate 2SC5053 (MPT3) . 5 »02 2-a, 1.6 * 0.1 * =Ea_ TT


    OCR Scan     		2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 PDF

    transistor bc 132

    Abstract: B1188 BC transistor series
    Text: 2SB1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62)package • package marking: 2SB1188; BC^, where ★ is hFE code 2SB1188 (MPT3) • collector power dissipation, P c = 2 W, when mounted on 40 x 40 x 0.7 mm


    OCR Scan     		2SB1188 OT-89, SC-62 2SB1188; 2SD1766 2SB1188 transistor bc 132 B1188 BC transistor series PDF

    2SC5053

    Abstract: No abstract text available
    Text: 2SA1900 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SA1900; ALA-, where ★ is hFE code • PC - 2 W (when mounted on a 40 x 40 x 0.7 mm ceramic substrate) • • 2SA1900 (MPT3) ♦0.2


    OCR Scan     		2SA1900 SC-62) 2SA1900; A/-50 2SC5053 2SA1900 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,


    OCR Scan     		2SB1132 SC-62) 2SB1132; 2SD1664 2SB1132 PDF

    2SD1664

    Abstract: Marking TRANSISTOR 232
    Text: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,


    OCR Scan     		2SD1664 SC-62) 2SD1664; 2SB1132 2SD1664 Marking TRANSISTOR 232 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)


    OCR Scan     		2SB1132 SC-62) 2SB1132; 2SD1664 D0147DD 147D2 PDF

    TRANSISTOR BI 237

    Abstract: NPN/TRANSISTOR BI 237
    Text: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for


    OCR Scan     		2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237 PDF

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING PDF

    2SD1766

    Abstract: No abstract text available
    Text: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x


    OCR Scan     		2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 2SD1766 PDF

    Untitled

    Abstract: No abstract text available
    Text: Centrar CUD10-02 CUD10-04 CUD10-06 Semiconductor Corp. SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER FEATURES: • HIGH RELIABILITY • LOW FORWARD VOLTAGE • HIGH CURRENT CAPABILITY • HIGH SURGE CAPACITY • UL FLAMMABILITY CLASSIFICATION 94V-0 • SUPERIOR LOTTO LOT CONSISTENCY


    OCR Scan     		CUD10-02 CUD10-04 CUD10-06 26-June PDF