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    MARKING 5S4 Search Results

    MARKING 5S4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 5S4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MGBR5S45 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5S45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.


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    PDF MGBR5S45 MGBR5S45 O-277 MGBR5S45L-T27-R MGBR5S45G-T27-R MGBR5S45L-Z21D-R MGBR5S45G-Z21D-R DO-201AD MGBR5S45L-SMC-R

    marking 1F

    Abstract: RDC5 HP4280A LES3811T SGE2660-3
    Text: Magnetic Component Specification Specification Number SGE2660-3 Rev.A 100402 This Document describes and specifies the electrical and mechanical characteristics of SGE2660-3 high voltage transformer for CCFL inverter power supply. This component should be designed and manufactured in accordance with Engineering


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    PDF SGE2660-3 SGE2660-3 LES3811T 10Khz, 100Khz, 1000Vrms P6015 2000Vrms marking 1F RDC5 HP4280A LES3811T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MGBR5S40 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5S40 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.


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    PDF MGBR5S40 MGBR5S40 MGBR5S40L-SMB-R MGBR5S40G-SMB-R QW-R204-050

    Untitled

    Abstract: No abstract text available
    Text: 32E D • aS3b3S0 Q Q lbSS? 7 H S I P Silicon Switching Diode Array SMBD 2837/38 _ SIEMENS/ S P C L i T-O%~03 SEMICONDS • For high-speed switching applications • Common cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape


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    PDF 23b320 T-03-09

    Untitled

    Abstract: No abstract text available
    Text: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network


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    PDF MUN2211/D MUN2211 MUN2212 MUN2213

    Untitled

    Abstract: No abstract text available
    Text: VITELIC CORP Tfl VITELIC Ì>E| TS0S310 DDDD303 T 23-12 V61C35 FAMILY HIGH PERFORMANCE LOW POWER 2 Kx 8 DUAL PORT MEMORY Description Features • 2K x 8 bit CM OS Static RAM with 3-state outputs ■ High Speed Multiplexed Dual Port operation • 55ns, 70ns, 90ns, 120ns access time


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    PDF TS0S310 DDDD303 V61C35

    Untitled

    Abstract: No abstract text available
    Text: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated


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    PDF IRFP350LC

    Untitled

    Abstract: No abstract text available
    Text: International I« ] Rectifier PD-9.751 IRFIZ24G fc>5E D INTERNATIONAL R E C T I F I E R HEXFET® Power M O SFET • • • • • • I IN R • " K S ' a ools37b 0T6 Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


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    PDF IRFIZ24G O-220 150KS2

    MOSFET 50V 100A TO-220

    Abstract: No abstract text available
    Text: 4055452 International E?R Rectifier PD-9.909 IIN R DD15fi5b Ô14 IRL530S b5E D INTERNATIONAL R E C T IF IE R HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V


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    PDF DD15fi5b IRL530S SMD-220 MOSFET 50V 100A TO-220

    Untitled

    Abstract: No abstract text available
    Text: UNR International Rectifier MflSSMSB 0015030 ATT HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER PD-9.561C IRL520 Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature Fast Switching


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    PDF IRL520

    D10N2

    Abstract: marking dC
    Text: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak


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    PDF MRF10070H* 1PHX312SO-1 MRF10070H/D 3b72S4 D10N2 marking dC

    RB040-40T

    Abstract: Schaffner load dump generator rb040 load dump test Car Battery 12V short circuit marking 5S4 ASD 32 pin marking 113a RB04 Schaffner 781
    Text: X= 7 SGS-THOMSON ^7# IM niE ^llILlO fæ m O S _ R B 0 4 0 -4 0 T REVERSED-BATTERY AND OVERVOLTAGE PROTECTION Application Specific Discretes a.S.d. FEATURES . PROTECTION AGAINST"LOAD DUMP” EFFECT • DIODE TO GUARD AGAINST BATTERY REVERSAL


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    PDF RB040-40T RB040-40T Schaffner load dump generator rb040 load dump test Car Battery 12V short circuit marking 5S4 ASD 32 pin marking 113a RB04 Schaffner 781

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an


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    PDF IRF7523D1 Rf7523d1 0D2B023

    Q02c

    Abstract: No abstract text available
    Text: P D -9 .1 5 6 8 B International I R Rectifier IRF7317 PRELIMINARY HEXFET Power M O S F E T • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


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    PDF IRF7317 55M52 Q02c

    Untitled

    Abstract: No abstract text available
    Text: NEC MOS INTEGRATED CIRCUIT juPD42S4400L, 424400L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD42S4400L, 424400L are 1 048 576 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF juPD42S4400L 424400L PD42S4400L, 424400L PD42S4400L 26-pin //PD42S4400L PD42S4400L cycles/128

    CH340

    Abstract: CS61535A CS61574A CS61575 CS62180A CS62180A-IL CS62180A-IP CS62180B DS2180A PLS151
    Text: A Cirrus Logic Company T1 Framer Features General Description The CS62180A and CS62180B are monolithic CMOS devices which encode and decode T 1 framing formats. The devices support bit-seven and B8ZS zero suppres­ sion, and bit-robbed signaling. Clear channel mode can


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    PDF CS62180B SLC-96Â CS62180A, DS2180A, DS2180 CS62180A CH340 CS61535A CS61574A CS61575 CS62180A-IL CS62180A-IP DS2180A PLS151

    ssy 1920

    Abstract: ssy 1920 8 pin MF-4MA MWAVE sc filter ic mf4 CHIP SM 4108
    Text: CS4216 Semiconductor Corporation 16-Bit Stereo Audio Codec Features General Description C3lwave • CMOS Stereo Audio Input/Output System Delta-Sigma A/D Converters Delta-Sigma D/A Converters Input Anti-Aliasing and Output Smoothing Filters Programmable Input Gain and


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    PDF CS4216 16-Bit CS4216 554b324 100-pin ssy 1920 ssy 1920 8 pin MF-4MA MWAVE sc filter ic mf4 CHIP SM 4108

    sn55470

    Abstract: 7544-1 transistor SN75326 SN7401 SN75426 54175 SN75270 SN55450 sn75493 National Semiconductor Linear Data Book
    Text: The Interface Circuits Data Book for Design Engineers First Edition IM P O R T A N T NO TICES Texas Instruments reserves the right to make changes at any tim e in order to im prove design and to supply the best product possible. T l cannot assume any responsibility for any circuits shown or


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