MARKING 4a
Abstract: BC859 .a h marking marking 4a sot23
Text: SEMICONDUCTOR BC859 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 4A 1 2 Item Marking Description Device Mark 4 BC859 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC859
OT-23
MARKING 4a
BC859
.a h marking
marking 4a sot23
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Mosfet
Abstract: SSF3051G7
Text: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load
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SSF3051G7
3051G7
45mohm
OT23-6
3000pcs
10pcs
30000pcs
Mosfet
SSF3051G7
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BC859 smd
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E
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OT-23
BC859
BC860
BC859A
BC859B
BC859C
BC860A
BC860B
BC859 smd
BC859A
BC859B
BC859C
BC860
BC860A
BC860B
BC860C
BC859
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Mosfet
Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
Text: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2341E
OT-23
for2341E
2341E
Mosfet
SSF2341E
marking 2341E
2341E
marking 4a sot23
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bc860
Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Text: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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BC857/BC858
BC859/BC860
BC857A
BC857B
BC858A
BC860B
BC860A
BC859B
BC859A
BC858B
bc860
bc858
BC857
BC857A
BC857B
BC858A
BC858B
BC859A
BC859B
BC860A
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BC859
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F
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ISO/TS16949
OT-23
BC859
BC860
BC859A
BC859B
BC859C
BC860A
BC859
BC859A
BC859B
BC859C
BC860
BC860A
BC860B
BC860C
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marking 1d4
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 80mV @ 1A
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ZXTN07045EFF
OT23F
ZXTP07040DFF
AEC-Q101
DS33674
marking 1d4
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marking 1d4
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 80mV @ 1A
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ZXTN07045EFF
OT23F
ZXTP07040DFF
AEC-Q101
J-STD-020
DS33674
marking 1d4
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IC 7495 pin configuration
Abstract: ic 7495 ZXTN25040DFH 50mmx50mm ZXTP25040DFH
Text: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A
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ZXTN25040DFH
ZXTP25040DFH
AEC-Q101
DS33697
IC 7495 pin configuration
ic 7495
ZXTN25040DFH
50mmx50mm
ZXTP25040DFH
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A
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ZXTN25040DFH
ZXTP25040DFH
AEC-Q101
DS33697
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marking 12W SOT23
Abstract: ZXTN2020F
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
ZXTN2020FTA
marking 12W SOT23
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OUTLINE DIMENSIONS in inche
Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to
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ZXTP2027F
-100V,
ZXTN2018F
OUTLINE DIMENSIONS in inche
marking 951
12W MARKING sot23
ZXTN2018F
ZXTP2027F
ZXTP2027FTA
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marking 12W SOT23
Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
marking 12W SOT23
ZXTN2020F
ZXTN2020FTA
ZXTP2029F
plc lamp
12W MARKING sot23
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Untitled
Abstract: No abstract text available
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
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marking 1A3
Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
Text: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to
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ZXTP25020DFH
ZXTN25020DFH
marking 1A3
ZXTN25020DFH
ZXTP25020DFH
ZXTP25020DFHTA
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marking 12W SOT23
Abstract: 12W MARKING sot23 IB100mA Marking 853
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
ZXTN2020FTA
522-ZXTN2020FTA
ZXTN2020FTA
marking 12W SOT23
12W MARKING sot23
IB100mA
Marking 853
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ZXTN25015DFH
Abstract: ZXTP25015DFH ZXTP25015DFHTA
Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to
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ZXTP25015DFH
-55mV
ZXTN25015DFH
ZXTN25015DFH
ZXTP25015DFH
ZXTP25015DFHTA
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ZXTN25015DFH
Abstract: ZXTP25015DFH ZXTP25015DFHTA
Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to
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ZXTP25015DFH
-55mV
ZXTN25015DFH
ZXTN25015DFH
ZXTP25015DFH
ZXTP25015DFHTA
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ZXTN25020CFH
Abstract: ZXTP25020CFH ZXTP25020CFHTA small driver igbt
Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to
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ZXTP25020CFH
-55mV
ZXTN25020CFH
ZXTN25020CFH
ZXTP25020CFH
ZXTP25020CFHTA
small driver igbt
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Untitled
Abstract: No abstract text available
Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
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ZXTN25050DFH
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ZXTN25040DFH
Abstract: ZXTN25040DFHTA ZXTP25040DFH
Text: ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m⍀ PD = 1.25W Complementary part number ZXTP25040DFH Description C Advanced process capability and package design have been used to
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ZXTN25040DFH
ZXTP25040DFH
ZXTN25040DFH
ZXTN25040DFHTA
ZXTP25040DFH
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zxtn25050dfhta
Abstract: No abstract text available
Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline
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ZXTN25050DFH
zxtn25050dfhta
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TRANSISTOR marking 489 code
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT489 30V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 30V Case: SOT-23 IC = 1A high Continuous Collector Current Case material: Molded Plastic. “Green” Molding Compound.
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FMMT489
OT-23
J-STD-020
300mV
MIL-STD-202,
500mW
DS33090
TRANSISTOR marking 489 code
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ZXTN25020BFH
Abstract: ZXTP25020BFH ZXTP25020BFHTA
Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to
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ZXTP25020BFH
-60mV
ZXTN25020BFH
ZXTN25020BFH
ZXTP25020BFH
ZXTP25020BFHTA
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