ic 74192
Abstract: 74193 application diagrams of IC 74191 ic 74193 74192 ic IC 7419 Ic 74191 of IC 74193 2SA1344 CPH5514
Text: Ordering number : ENN7419 CPH5514 PNP Epitaxial Planar Silicon Transistor CPH5514 Switching Applications with Bias Resistance Features 0.15 0.2 4 3 0.05 0.6 • [CPH5514] 2.9 0.6 • On-chip bias resistance (R1=10kΩ, R2=10kΩ). unit : mm Composite type with 2 transistors contained in the
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ENN7419
CPH5514
CPH5514]
CPH5514
2SA1344,
ic 74192
74193 application diagrams
of IC 74191
ic 74193
74192 ic
IC 7419
Ic 74191
of IC 74193
2SA1344
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IN17A
Abstract: No abstract text available
Text: <<Contents>> <<Index>> General Specifications ARM15A, ARM55, ARS15B, ARS15M, ARS55M Relay Boards for FIO GS 33K50H60-50E [Release 5] GENERAL This document describes the specifications of relay board used in FIO subsystem of CENTUM VP. Relay input/
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ARM15A,
ARM55ï
ARS15B,
ARS15M,
ARS55M
33K50H60-50E
32-point
IN17A
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ADV151
Abstract: ADV561 fcn-100 yokogawa
Text: <<Contents>> <<Index>> General Specifications ARM15A, ARM55, ARS15B, ARS15M, ARS55M Relay Boards for FIO GS 33K50H60-50E [Release 5] n GENERAL This document describes the specifications of relay board used in FIO subsystem of CENTUM VP. Relay input/ output boards are connected in between digital input/output modules (for FIO) and field devices. Relay input boards
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ARM15A,
ARM55ï
ARS15B,
ARS15M,
ARS55M
33K50H60-50E
32-point
ADV151
ADV561
fcn-100 yokogawa
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PXI-2535
Abstract: PXI-2536 SCH68-68 fet 544 a 778546-01 PXI-4071 191945-01 777141-01 FET MARKING CODE TBX-68
Text: 544-Crosspoint FET Matrix NI PXI-2535, NI PXI-2536 NEW! • PXI-2535: 4x136 1-wire • PXI-2536: 8x68 (1-wire) • Switch capacity • ±12 VDC/8 VAC • 100 mA switching/carry • 50,000 crosspoints/s • Unlimited mechanical lifetime • 32,000-step scan list for
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544-Crosspoint
PXI-2535,
PXI-2536
PXI-2535:
4x136
PXI-2536:
000-step
Vista/XP/2000
51548A-01*
51548A-01
PXI-2535
SCH68-68
fet 544 a
778546-01
PXI-4071
191945-01
777141-01
FET MARKING CODE
TBX-68
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2SC3311A
Abstract: 2SC3354 UP04599
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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2002/95/EC)
UP04599
OD-723
2SC3354
2SC3311A
2SC3311A
2SC3354
UP04599
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2SC3311A
Abstract: 2SC3354 UP04599
Text: Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 0.30 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) 1 • Two elements incorporated into one package (Each transistor is separated)
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UP04599
OD-723
2SC3354
2SC3311A
2SC3311A
2SC3354
UP04599
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features Package Two elements incorporated into one package (Each transistor is separated)
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2002/95/EC)
UP04599G
2SC3932
2SD2216J
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up04599g
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features Package Two elements incorporated into one package (Each transistor is separated)
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2002/95/EC)
UP04599G
2SC3932
2SD2216J
up04599g
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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2002/95/EC)
UP04599
2SC3354
2SC3311A
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8x32 LED Matrix
Abstract: 68pin SCSI connector mosfet deployment PXI-2533 PXI-2534 PXI-4071 TBX-68 pxi-2533 "pin compatible" photosensitive matrix MOSFET SSR
Text: 256-Crosspoint SSR Matrix Modules NI PXI-2533, NI PXI-2534 NEW! • PXI-2533: 4x64 1-wire • PXI-2534: 8x32 (1-wire) • Switch capacity • ±55 VDC/30 VAC • 1 A switching/carry • 55 W • 400 crosspoints/s • Unlimited mechanical lifetime • Unlimited simultaneous
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256-Crosspoint
PXI-2533,
PXI-2534
PXI-2533:
PXI-2534:
VDC/30
000-step
Vista/XP/2000
51559A-01*
51559A-01
8x32 LED Matrix
68pin SCSI connector
mosfet deployment
PXI-2533
PXI-4071
TBX-68
pxi-2533 "pin compatible"
photosensitive matrix
MOSFET SSR
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schroff cpa250
Abstract: Interleaved PFC Boost Converter schroff power supply CPA550 CPA250-4530G PCIH47F300 PCIH47F300A
Text: 200 – 550 Watt CompactPCI ® CPA /CPD Series Data Sheet AC-DC and DC-DC Converters 100 3.94" 3U 162.5 6.4" 40.6 1.6" 8 HP 233.3 7.8" 6U Features 40.4 1.6" 8 HP • RoHS lead-free-solder and lead-solder-exempted products are available 162.5 6.4" • Compliant with PICMG® CompactPCI® specifications
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47-pin
73/23/EEC,
BCD20005-G
29-Oct-08
schroff cpa250
Interleaved PFC Boost Converter
schroff power supply
CPA550
CPA250-4530G
PCIH47F300
PCIH47F300A
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2SC3311A
Abstract: 2SC3354 UP04599
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d Parameter Collector-base voltage (Emitter open) Collector-emitter voltage
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2002/95/EC)
UP04599
2SC3311A
2SC3354
UP04599
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2SC3932
Abstract: 2SD2216J UP04599G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features Package M Di ain sc te on na tin nc
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2002/95/EC)
UP04599G
2SC3932
2SD2216J
2SC3932
2SD2216J
UP04599G
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marking 3U 3T diode
Abstract: No abstract text available
Text: DSK3J02 Silicon N-channel Junction FET For impedance conversion in low frequency • Features Package Low noise voltage NV Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SSSMini3-F2-B
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DSK3J02
marking 3U 3T diode
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Untitled
Abstract: No abstract text available
Text: 200 – 550 Watt CompactPCI ® CPA, CPD Series Data Sheet AC-DC and DC-DC Converters 100 3.94" 3U 162.5 6.4" 40.6 1.6" 8 HP 233.3 7.8" 6U Features 40.4 1.6" 8 HP • RoHS lead-free-solder and lead-solder-exempted products are available 162.5 6.4" • Compliant with PICMG® CompactPCI® specifications
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73/23/EEC,
BCD20005-G
29-May-09
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inverter circuit dc to dc 2V to 100V
Abstract: marking 3t1 TOSHIBA FL INVERTER TPC6502
Text: TOSHIBA TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-speed Switching Applications DC-DC Converter Applications DC-AC Inverter Applications • High DC current gain: hF E = 400 to 1000 IC=0.3A Low collector-emitter saturation voltage : VCE(sat)~ 0.14V (max)
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TPC6502
hFE-400
120ns
inverter circuit dc to dc 2V to 100V
marking 3t1
TOSHIBA FL INVERTER
TPC6502
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marking codes transistors sot-223
Abstract: FD MARKING CODE SOT23 SMD marking CODE 2U sot-89 marking code SOT89 smd marking 13 npn Darlington SOT23 marking 1m sot 223 marking code 01 SMD CODE PACKAGE SOT89 smd sot-89 marking code sot-223 code marking
Text: SMD DARLINGTON TRANSISTORS DESCRIPTION •Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two series-integrated transistors on a single chip. High current versions are excellent for industrial switching applications
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OT-89
OT-223
BST62
PMBT6427
PMBTA13
PMBTA14
PMBTA63
PMBTA64
BSP62
BST50
marking codes transistors sot-223
FD MARKING CODE SOT23
SMD marking CODE 2U
sot-89 marking code
SOT89 smd marking 13
npn Darlington SOT23 marking 1m
sot 223 marking code 01
SMD CODE PACKAGE SOT89
smd sot-89 marking code
sot-223 code marking
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD1784 TOSHIBA FIELD EFFECT TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 784 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • • 1.6MAX. High DC Current Gain hpE = 4000 (Min.)
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2SD1784
150mA)
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Marking R1P
Abstract: r1p 11 TRANSISTOR R2X SOT23 sst2222a R1P SOT-223
Text: Die no. C-31 NPN medium power transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • 0.951 f 1' 0.45±0.1 l.9±0.2 available in the following packages: |0.9S^0,tej L — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59)
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OT-23)
SC-59)
OT-323)
OT-89)
Marking R1P
r1p 11 TRANSISTOR
R2X SOT23
sst2222a
R1P SOT-223
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TLP627
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP627,-2,-4 PROGRAMMABLE CONTROLLERS. Unit in mm DC-OUTPUT MODULE. TELECOMMUNICATION. The TOSHIBA TLP627, -2, and -4 consist of a gallium arsenide infreared emitting diode optically coupled to a darlington connected phototransistor which
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TLP627
TLP627,
TLP627-2
TLP627-4
TLP62
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2SK608
Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
Text: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü
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A721W
MA3000-
2SK608
D717Y
2SC4894
2sk1216
C3967
2SC3967
2sk316
MA151WK
2sk123
2sc4238
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C25M
Abstract: No abstract text available
Text: SILICON EPICAP DIODE MMBV105GLT1* . . . d e s ig n e d in th e S u rfa c e M o u n t p ac k a g e fo r g e n e ra l fre q u e n c y c o n tro l a n d tu n in g a p p lic a tio n s ; p ro v id in g s o lid -s ta te r e lia b ility in r e p la c e m e n t o f
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MMBV105GLT1*
OT-23
O-236AB)
C3/C25
MMBV105GLT1
MMBV105GLT1
BV105GL
C25M
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2sc4780
Abstract: A1531A 2SC4661 2SC4670 MA141K 2SC4239 2SD1819 R A745W
Text: —5/ S Mini Type 3-pin Package Outline Transistors, Diodes Unit : mm 2 1 ± 0.1 1.25 ± 0.3 0.425 m uw l S = - S ( 3 S i ) / N - 7 ^ - - v l i . S t # W 5 - S ( 3 i f f i i ) ^ 0y ^ - v £ i u 5 - ^ ( 3 « ^ ) ¿ lP lli< 7 ) 1 4 f ! li H I # L fc . h 7 > v '7 , i? .
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MA741
A741W
MA742
MA744
MA745
A745W
2sc4780
A1531A
2SC4661
2SC4670
MA141K
2SC4239
2SD1819
R A745W
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JT MARKING
Abstract: T108 TC-6249 RI-27
Text: SEC Ì Ì T / \ -y • 5 7 ^ Com pound Transistor t À GN1F4N fitt ï P N P JE i; □ > ft ftïïm o ^ M T * i î : mm X i £ # C £ l*3j ^ L T ^ i t o (R i= 2 7 k û , R 2= 47 k Û ) OGA1F4N i 3 >7°'J / > 9 ]) X-fëmx-Z t t 3 ê* J il* :Ê fê (Ta = 25 °C)
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PWS10
CycleS50
JT MARKING
T108
TC-6249
RI-27
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