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    MARKING 30 DUAL MOSFET Search Results

    MARKING 30 DUAL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 30 DUAL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5902DC

    Abstract: No abstract text available
    Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		PDF Si5902DC S-62424--Rev. 04-Oct-99

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 18-Jul-08

    Si5902DC

    Abstract: Si5902DC-T1 marking code ca
    Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		PDF Si5902DC Si5902DC-T1 S-21251--Rev. 05-Aug-02 marking code ca

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		PDF Si1900DL OT-363 SC-70 S-02367--Rev. 23-Oct-00

    marking code PB

    Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51614--Rev. 05-Sep-05 marking code PB SI1900DL-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		PDF Si1900DL OT-363 SC-70 S-01458--Rev. 10-Jul-00

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code


    Original     		PDF Si1900DL OT-363 SC-70 S-21374--Rev. 12-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		PDF Si5902DC S-62424--Rev. 04-Oct-99

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 08-Apr-05

    Si5902DC

    Abstract: Si5902DC-T1
    Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		PDF Si5902DC Si5902DC-T1 18-Jul-08

    vishay MOSFET code marking

    Abstract: No abstract text available
    Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		PDF Si5902DC Si5902DC-T1 08-Apr-05 vishay MOSFET code marking

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51075--Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,


    Original     		PDF CWDM305P CWDM305PD CWDM305ND CWDM305ND CWDM305P CWDM305PD

    marking sop-8

    Abstract: STN4920 MOSFET dual SOP-8 Dual N-Channel MOSFET SOP8 channel mosfet sop_8 Stanson Technology diode 72A marking 30 dual mosfet 10 35 SOP DIODE
    Text: STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered


    Original     		PDF STN4920 STN4920 STN4920S8RG STN4920S8TG marking sop-8 MOSFET dual SOP-8 Dual N-Channel MOSFET SOP8 channel mosfet sop_8 Stanson Technology diode 72A marking 30 dual mosfet 10 35 SOP DIODE

    STP4803

    Abstract: STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8
    Text: STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4803 STP4803 -30V/-5 -30V/-4 STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench“ MOSFET General Description Features This device is designed specifically as a single package x 2.9 A, 30 V RDS ON = 123 m: @ VGS = 4.5 V solution for dual switching requirements in cellular RDS(ON) = 140 m: @ VGS = 3.0 V handset


    Original     		PDF FDMA2002NZ FDMA2002NZ

    channel mosfet sop_8

    Abstract: stp4953 MOSFET dual SOP-8 Dual p-Channel MOSFET SOP8 P channel MOSFET 50A Stanson Technology 30v p channel mosfet dual mosfet "marking code 30" Marking 52a SOP8 Package
    Text: STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4953 STP4953 -30V/-5 -30V/-4 -30V/-3 channel mosfet sop_8 MOSFET dual SOP-8 Dual p-Channel MOSFET SOP8 P channel MOSFET 50A Stanson Technology 30v p channel mosfet dual mosfet "marking code 30" Marking 52a SOP8 Package

    Mosfet

    Abstract: SSF3626
    Text: SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A


    Original     		PDF SSF3626 SSF3626 330mm Mosfet

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor Power TMOS¨ MOSFETs and Diodes Power TMOS¨ MOSFETs Continued TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 Ñ N-Channel TMOS V ÑTO-220AB Mfr.Õs Type4 V(BR)DSS (V) Min. RDS(on) (½) Max. 1000 800 600 500 500 400 400 250 200


    Original     		PDF O-247 O-247 O-220AB MTW10N100E MTP3055V MTW7N80E MTP15N06V MTW8N60E MTP36N06V MTW14N50E

    marking 30 dual mosfet

    Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561 SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN6561 SPN6561 marking 30 dual mosfet dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET

    Mosfet

    Abstract: SSF2616E
    Text: SSF2616E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF SSF2616E SSF2616E SSF261e Mosfet

    Mosfet

    Abstract: SSF4953
    Text: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).


    Original     		PDF SSF4953 SSF4953 Mosfet

    sot-363 marking 3C

    Abstract: lf 10193
    Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code


    OCR Scan     		PDF OT-363 SC-70 S-02367-- 23-Oct-OO sot-363 marking 3C lf 10193