Si5902DC
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
S-62424--Rev.
04-Oct-99
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Si1900DL
Abstract: Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
18-Jul-08
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Si5902DC
Abstract: Si5902DC-T1 marking code ca
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
S-21251--Rev.
05-Aug-02
marking code ca
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Si1900DL
Abstract: No abstract text available
Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability
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Si1900DL
OT-363
SC-70
S-02367--Rev.
23-Oct-00
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marking code PB
Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
S-51614--Rev.
05-Sep-05
marking code PB
SI1900DL-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability
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Si1900DL
OT-363
SC-70
S-01458--Rev.
10-Jul-00
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Si1900DL
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code
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Original
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Si1900DL
OT-363
SC-70
S-21374--Rev.
12-Aug-02
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Untitled
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Original
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Si5902DC
S-62424--Rev.
04-Oct-99
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PDF
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Si1900DL
Abstract: Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
08-Apr-05
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PDF
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Si5902DC
Abstract: Si5902DC-T1
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
18-Jul-08
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vishay MOSFET code marking
Abstract: No abstract text available
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Original
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Si5902DC
Si5902DC-T1
08-Apr-05
vishay MOSFET code marking
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Untitled
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
S-51075--Rev.
13-Jun-05
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Untitled
Abstract: No abstract text available
Text: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,
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CWDM305P
CWDM305PD
CWDM305ND
CWDM305ND
CWDM305P
CWDM305PD
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marking sop-8
Abstract: STN4920 MOSFET dual SOP-8 Dual N-Channel MOSFET SOP8 channel mosfet sop_8 Stanson Technology diode 72A marking 30 dual mosfet 10 35 SOP DIODE
Text: STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered
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STN4920
STN4920
STN4920S8RG
STN4920S8TG
marking sop-8
MOSFET dual SOP-8
Dual N-Channel MOSFET SOP8
channel mosfet sop_8
Stanson Technology
diode 72A
marking 30 dual mosfet
10 35 SOP DIODE
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STP4803
Abstract: STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8
Text: STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP4803
STP4803
-30V/-5
-30V/-4
STP48
MOSFET 30v sop-8
marking 52A
MOSFET dual SOP-8
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Mosfet
Abstract: SSF2418E 2418E
Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF2418E
18mohm
OT23-6
2418E
Mosfet
SSF2418E
2418E
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Untitled
Abstract: No abstract text available
Text: Dual N-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package x 2.9 A, 30 V RDS ON = 123 m: @ VGS = 4.5 V solution for dual switching requirements in cellular RDS(ON) = 140 m: @ VGS = 3.0 V handset
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FDMA2002NZ
FDMA2002NZ
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channel mosfet sop_8
Abstract: stp4953 MOSFET dual SOP-8 Dual p-Channel MOSFET SOP8 P channel MOSFET 50A Stanson Technology 30v p channel mosfet dual mosfet "marking code 30" Marking 52a SOP8 Package
Text: STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP4953
STP4953
-30V/-5
-30V/-4
-30V/-3
channel mosfet sop_8
MOSFET dual SOP-8
Dual p-Channel MOSFET SOP8
P channel MOSFET 50A
Stanson Technology
30v p channel mosfet
dual mosfet "marking code 30"
Marking 52a
SOP8 Package
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Mosfet
Abstract: SSF3626
Text: SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A
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SSF3626
SSF3626
330mm
Mosfet
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor Power TMOS¨ MOSFETs and Diodes Power TMOS¨ MOSFETs Continued TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 Ñ N-Channel TMOS V ÑTO-220AB Mfr.Õs Type4 V(BR)DSS (V) Min. RDS(on) (½) Max. 1000 800 600 500 500 400 400 250 200
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O-247
O-247
O-220AB
MTW10N100E
MTP3055V
MTW7N80E
MTP15N06V
MTW8N60E
MTP36N06V
MTW14N50E
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marking 30 dual mosfet
Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561 SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPN6561
SPN6561
marking 30 dual mosfet
dual mosfet "marking code 30"
sot 26 Dual N-Channel MOSFET
SPN6561S26RG
5V GATE TO SOURCE VOLTAGE MOSFET
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Mosfet
Abstract: SSF2616E
Text: SSF2616E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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SSF2616E
SSF2616E
SSF261e
Mosfet
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Mosfet
Abstract: SSF4953
Text: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
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SSF4953
SSF4953
Mosfet
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sot-363 marking 3C
Abstract: lf 10193
Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code
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OCR Scan
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OT-363
SC-70
S-02367--
23-Oct-OO
sot-363 marking 3C
lf 10193
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