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    MARKING 247 SMB DIODE ON SEMICONDUCTOR Search Results

    MARKING 247 SMB DIODE ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 247 SMB DIODE ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s104 diode 87a

    Abstract: s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor
    Text: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency


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    PDF J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-220AA GBPC602RU GBPC2508 02-Oct-09 s104 diode 87a s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


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    PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    mosfet triggering circuit USING TL494

    Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
    Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    PDF SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


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    PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


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    PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    diode A14A surface mount

    Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
    Text: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling


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    PDF MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD640CT MBRD660CT VHE205 VHE210 diode A14A surface mount SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode

    ANA 618

    Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
    Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    PDF SGD501/D ANA 618 voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


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    PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


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    PDF MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan
    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28