C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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1N5059
Abstract: 1N5062 1n5062 equivalent 1N5061 diode 1n5059 1N5062 diode 1N5060 Marking codes 1N5060 diode CPR1-010
Text: Central 1N5059 THRU 1N5062 TM Semiconductor Corp. GLASS PASSIVATED RECTIFIER 1.0 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed glass passivated package designed for general purpose applications where
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1N5059
1N5062
1N5059
CPR1-010
1N5059,
1N5060)
1N5061,
1N5062)
1N5060
1N5062
1n5062 equivalent
1N5061
diode 1n5059
1N5062 diode
Marking codes
1N5060 diode
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1n5060
Abstract: 1N5062 1N5061 1N5059
Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,
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1N5059
1N5060
1N5061
1N5062
CPR1-010
1N5060
1N5062
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1N5062
Abstract: 1N5059 1N5060 1N5061
Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general
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1N5059
1N5060
1N5061
1N5062
CPR1-010
1N5060
1N5062
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave
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1N5059-1N5062
1N5059
1N5060
1N5061
1N5062
OD-57,
OD-57
MIL-PRF-19500,
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1N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary Power MOSFET 1A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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1N50-KW
1N50-KW
QW-R205-053
1N50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 1N50K-TA Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum
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1N50K-TA
1N50K-TA
QW-R205-048
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1N50A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N50A Preliminary Power MOSFET 1.0A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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1N50A
1N50A
QW-R205-030
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N50Z Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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1N50Z
1N50Z
QW-R502-726
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
O-220F1
QW-R502-548
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ZENER DIODE marking l2
Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.
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1N5221B-G
1N5267B-G
-500mW
DO-35
DO-35
MIL-STD-750
13gram
QW-BZ001
1N5221-G
ZENER DIODE marking l2
zener voltage for diode 1N5231B
smd diode marking code g
SMD ZENER DIODE MARKING CODE G
SMD zener marking code 102
SILICON PLANAR zener diode DO-35
1N5222B SMD diode
Zener diode smd marking code 24
1N5239B SMD
1N5227B
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TZP27B
Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Text: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73
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DO-35
1SS41
DO-34
1S2471
1SS131
B100A
TZP27B
TZP33A
tzp 33a
zp 33a
TZP10A
zener 1n 4148
957B
R 958B
zener 56c
marking CODE S139
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diode t88
Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
Text: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation
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1N5000
IN5000
DO-35
DO-35
5261B
1N5262B
5262B
1N5263B
5263B
1N5264B
diode t88
zener diode 4.7V
1n4000 DIODE
t88 diode
T-72 diode
5261B
5230b
1N4000
1N5000 SERIES
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IN5230B
Abstract: 5246B 1n 5252b zener 5242B 1N5000 5232b 1N5248B 1N5000 SERIES
Text: 1N5000B series Diodes, Zener, 500 mW, leaded These glass-sealed Zener diodes are suitable for lead mounting on printed circuit boards. They can be used to regulate voltages between 4 and 24 V. Dimensions Units : mm CATHODE BAND <£ 0 . 5 ± 0 . I Features
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1N5000B
DO-35
IN5000B
IN5230B
5230BR.
1N5000
5246B
1n 5252b zener
5242B
5232b
1N5248B
1N5000 SERIES
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Untitled
Abstract: No abstract text available
Text: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 MicrosemiCorp. The dxxte expense SANTA ANA, CA F or m ore inform ation call: 714 »79-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidiess hermetically sealed glass package.
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1N5063
1N5117
MZ806
MZ890,
MZ211
MZ111)
D37TE
1N5117,
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T34 rectifier
Abstract: No abstract text available
Text: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and
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DDEbT13
1N5059
7Z88032
bb53531
002b51fl
002b515
T34 rectifier
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Untitled
Abstract: No abstract text available
Text: ESE D M I C R O S E M I CORP t l l S ñ h S OOGDTTfl b 1N5063 - 1N5117 MZ806 - MZ890, MZ 2 1 0 -M Z 240 MierasemiCarp. ' Ttwí&jetxpttts SANTA ANA, CA SCOTTSDALE. AZ Foe more information calk 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • •
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1N5063
1N5117
MZ806
MZ890,
MZ21T
MZ111J.
1N5117,
806-M
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1N5059
Abstract: No abstract text available
Text: • bbSBTBl □□2LCÌ13 151 BIAPX N AMER PHILIPS/DISCRETE h^E 1N5059 to 5062 T> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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1N5059
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1N5061
Abstract: A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N
Text: 7294621 POWEREX INC 74 I ieT J 7 5 1 4 1 ,2 1 T- °i~i3 DÜÜ1351 Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO
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DDOiaa11]
270Mm
1N5061
A14P
A14B
IN5059
1N5059
1N5060
1N5062
A14D
A14M
A14N
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201 Zener diode
Abstract: zener diode 188 SWITCHING DIODES 1n700 diode 1N700 marking 212 1N5000 SERIES RLz500 1N900 1N5000 diode
Text: Diodes Quick reference-ieo Diodes Quick reference-1*> Diodes Arrays Quick reference- 161 Diodes Arrays Quick reference-iai Package Available- 162
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ation---------------------------------102
201 Zener diode
zener diode 188
SWITCHING DIODES
1n700
diode 1N700
marking 212
1N5000 SERIES
RLz500
1N900
1N5000 diode
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