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    MARKING 1BA Search Results

    MARKING 1BA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 1BA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • small capacitance BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package


    Original     		PDF BA592/BA892. BA592 BA892/-02L BA892-02V BA892 BA892-02L OD323 SCD80

    BA892

    Abstract: diode marking code PB BA592 BA892-02L BA892-02V SC79 SCD80 diode MARKING CODE RP diode Marking Code AA
    Text: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • Small capacitance • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BA592/BA892. BA592 BA892/-02L BA892-02V BA892 BA892-02L OD323 SCD80 BA892 diode marking code PB BA592 BA892-02L BA892-02V SC79 SCD80 diode MARKING CODE RP diode Marking Code AA

    Untitled

    Abstract: No abstract text available
    Text: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • small capacitance BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package


    Original     		PDF BA592/BA892. BA592 BA892/-02L BA892-02V BA892 BA892-02L OD323 SCD80

    Untitled

    Abstract: No abstract text available
    Text: BA592/BA892. Silicon RF Switching Diode  For band switching in TV/VTR tuners and mobile applications  Very low forward resistance typ. 0.45  @ 3 mA  small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323


    Original     		PDF BA592/BA892. BA592 BA892/-02L BA892-02V BA892 BA892-02L OD323 SCD80

    marking G5s

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 marking G5s BAR63-02L BAR63-02V

    Pin diode G4S

    Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L Pin diode G4S BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L BAR63-02V

    BAR63-05

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02L BAR63-02V

    02LRH

    Abstract: BAR64-03W bar6403w e6327
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. BAR64-02L BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 02LRH BAR64-03W bar6403w e6327

    BAR88-07LRH

    Abstract: BAR88-099LRH BAR88 BAR88-02LRH BAR88-02V BAR88-098LRH SC79 TSLP
    Text: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ I F = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion


    Original     		PDF BAR88. BAR88-02LRH BAR88-02V BAR88-07LRH BAR88-098LRH BAR88-099LRH BAR88-07LRH BAR88-099LRH BAR88 BAR88-02LRH BAR88-02V BAR88-098LRH SC79 TSLP

    Untitled

    Abstract: No abstract text available
    Text: BAR65. Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance typ. 0.65 Ω @ 5 mA • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications


    Original     		PDF BAR65. BAR65-02L BAR65-02V BAR65-03W BAR65-02L OD323 BAR65-02L, BAR65-02V,

    BAR63-02V

    Abstract: BAR65 BAR65-02L BAR65-02V BAR65-03W SC75 SC79 SCD80
    Text: BAR65. Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance typ. 0.65 Ω @ 5 mA • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications


    Original     		PDF BAR65. BAR65-02L BAR65-02V BAR65-03W BAR65-02L* OD323 BAR63-02V BAR65 BAR65-02L BAR65-02V BAR65-03W SC75 SC79 SCD80

    Untitled

    Abstract: No abstract text available
    Text: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ IF = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion


    Original     		PDF BAR88. BAR88-02LRH BAR88-02V BAR88-07LRH BAR88-099LRH BAR88-098LRH BAR88-02V BAR88-07LRH BAR88-098LRH

    BAR88

    Abstract: BAR88-02V BAR88-07LRH BAR88-02L BAR88-02LRH BAR88-07L4 BAR88-098LRH BAR88-099L4 BAR88-099LRH SC79
    Text: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ IF = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion


    Original     		PDF BAR88. BAR88-02L BAR88-02LRH BAR88-02V BAR88-07L4 BAR88-07LRH BAR88-098LRH BAR88-02LRH* BAR88 BAR88-02V BAR88-07LRH BAR88-02L BAR88-02LRH BAR88-07L4 BAR88-098LRH BAR88-099L4 BAR88-099LRH SC79

    MMBR2857

    Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)


    OCR Scan     		PDF OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1

    zt751

    Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
    Text: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30


    OCR Scan     		PDF OT-223 BSP19AT1 PZTA42T1 BF720T1 BSP20AT1 SP19A BF720 SP20A PZTA98T1 PZTA92T1 zt751 3055L 2955E 3055e zta96 2N02L marking 651 sot223

    sot-23 Marking G1

    Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0


    OCR Scan     		PDF OT-23 MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 MMBT5087 MMBT5086 MMBTA42 sot-23 Marking G1 marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l

    MLL34

    Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
    Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max


    OCR Scan     		PDF BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking

    MMBTH24L

    Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking


    OCR Scan     		PDF b3b72SiJ OT-23 MMBT2369L BSV52L MMBT2222L MMBT2222AI. MMBT3904T MMBT3638 MBT3640L MBT4403L MMBTH24L MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL

    motorola p1f

    Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
    Text: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1


    OCR Scan     		PDF OT-223 318E-04 BCP56T1 BCP53T1 PZT2222AT1 PZT2907AT1 BSP52T1 PZTA14T1 motorola p1f P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING

    itt 2222a

    Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
    Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min


    OCR Scan     		PDF PZT2222A PZT2907A PZTA14 BSP52 ZTA14 PZTA64 ZTA64 PTZA42 TZA42 itt 2222a itt 2907A motorola diode cross reference PTZA92 2222a pinout 2907A bs33 zta96

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


    OCR Scan     		PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1

    marking CJD

    Abstract: A6 marking MRF947t1 marking 6B
    Text: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5


    OCR Scan     		PDF SC-70/SQT-323 MRF947T1 MRF947BT1 MRF957T1 MUN5211T1 MUNS212T1 MUN5213T1 MUN5214T1 MUN5111T1 MUN5112T1 marking CJD A6 marking marking 6B

    JAHL-5119

    Abstract: No abstract text available
    Text: 'ON B DATE J& » REV. 0 5 1 8 0 lPS DON W. R NO. & m D E S C R IP T IO N a Ü DR. s m AP PD. à CHK. APPD. GNIMVag WHI TE MARKING AS INDICATED N0TE3 { SLASH PART: POLARI ZATI ON KEY) D E S IQNATION 'op'4la>i J N2AW05MH MODIFICATION NUMBER CONTACT SIZE(H:#16)


    OCR Scan     		PDF N2AW05MH JACS-5119-4 JAHL-5119 N2AW05MH1 JAHL-5119