MV SOT23
Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Text: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range
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ZC2812E
ZC2813E
ZC2811E
MV SOT23
ZC2812E
NA MARKING SOT23
test SOt23
NA SOT23
sot23 1V
ZC2813E
marking 54 sot23
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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T 3036
Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,
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2N2377
MIL-S-19SCW288
MIL-s-19500/288
T 3036
bel transistor 1041 B
SAQ marking
2N23
2N2377
S19C
T3036
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SOT890-1
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse
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OD-123+
060TYP
118TYP
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
SOT890-1
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Frequency Control Products
Abstract: CB2V
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-1012 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsE-db0020-1012
Frequency Control Products
CB2V
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2601NZ
Abstract: FDW2601NZ 2601N
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
2601NZ
2601N
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n mosfet pspice parameters
Abstract: FDW2512NZ 2512nz
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
n mosfet pspice parameters
2512nz
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5e8 marking
Abstract: 66E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
5e8 marking
66E-3
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WX26 cable
Abstract: marking code H5C SMD Transistor xo-54be max 083 Crystal Oscillator, Leaded, Radial, 16.000 MHz smd transistor h5c XO-54B p l e sq3300 mto13fad XO-52BE
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-0507 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsE-db0020-0507
WX26 cable
marking code H5C SMD Transistor
xo-54be
max 083
Crystal Oscillator, Leaded, Radial, 16.000 MHz
smd transistor h5c
XO-54B
p l e sq3300
mto13fad
XO-52BE
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Zener diode smd marking S4
Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.
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R1407,
R1401,
Zener diode smd marking S4
DIAC DB2
melf ZENER diode COLOR BAND
gps 1575R
melf ZENER diode COLOR CODE
LTWC455E
zener smd marking 931
1575R
SR360* EQUIVALENT
Tuning Fork Crystal 40khz
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ISL28417FVZ
Abstract: ISL28117 DIE
Text: 40V Precision Low Power Operational Amplifiers ISL28117, ISL28217, ISL28417 Features The ISL28117, ISL28217 and ISL28417 are a family of very high precision amplifiers featuring low noise vs power consumption, low offset voltage, low IBIAS current and low temperature drift
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ISL28117,
ISL28217,
ISL28417
ISL28217
ISL28417
ISL28117
5M-1994.
MO-153,
ISL28417FVZ
ISL28117 DIE
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Untitled
Abstract: No abstract text available
Text: FDS3992 Dual N-Channel PowerTrench MOSFET 100V, 4.5A, 62mΩ Features Applications • rDS ON = 54mΩ (Typ.), VGS = 10V, ID = 4.5A • DC/DC converters and Off-Line UPS • Qg(tot) = 11nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDS3992
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Untitled
Abstract: No abstract text available
Text: 40V Precision Low Power Operational Amplifiers ISL28117, ISL28217, ISL28417 Features The ISL28117, ISL28217 and ISL28417 are a family of very high precision amplifiers featuring low noise vs power consumption, low offset voltage, low IBIAS current and low temperature drift
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ISL28117,
ISL28217,
ISL28417
ISL28217
ISL28417
ISL28117
5m-1994.
FN6632
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Untitled
Abstract: No abstract text available
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZC2812E
ZC2813E
lplt-20m
ZC2811E
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marking 54 sot23
Abstract: ZC2812
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L
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ZC2812E
ZC2813E
ZC2811E
marking 54 sot23
ZC2812
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KT 117A
Abstract: SMD CODE HBA
Text: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking
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OT-223
BSP315P
Q67042-S4004
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
KT 117A
SMD CODE HBA
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Untitled
Abstract: No abstract text available
Text: 13E D § TS0231Q VITELIC CORP V V ITE LIC uqqqsi? b | V61C32 FAMILY HIG H PERFORMANCE LOW POWER 2 K x 8 BIT CMOS DUAL PORT M EM ORY Features Description • 2 K x 8 bit C M O S static R A M with 3-state outputs The Vitelic V61C32 is a CMOS 2K x 8 high-speed
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TS0231Q
V61C32
simultaneous125
V61C32
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2222a sot23
Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.
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FMMT2222
FMMT2222A
FMMT2907
OT-23
FMMT2222A
Co00/300
FMMT2369A
2222a sot23
2222a
bc 2222a
50s MARKING CODE
BCV72
BCW29
BFQ31
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st+MYS+99+821
Abstract: No abstract text available
Text: t if c a 108-20166 Product Specification Electronics 07Feb01 Rev B EC 0990-0195-01 Terminal Block Stacking Connectors 1. SCOPE 1. 1. Content This specification covers performance, tests and quality requirements for Terminal Block Stacking connector. This connector is designed to terminate solid 0.03 to 4 m m 2 or stranded (0.03 to 2.5 mm2)
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07Feb01
st+MYS+99+821
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marking 43e
Abstract: ScansU9X19
Text: LINEAR TECHNOLOGY CORP M3E D /TLint/\E_ • SSl fi Mbfl DQOSOQfl 2 ■ L T C LT1078AM/883, LT1079AM/883 7~-7 9 - / 0 TECHNOLOGY Micropower, Dual, Single Supply Precision Op Am p DESCRIPTION ABSOLUTE MAXIMUM RATINGS The LT1078 and LT1079 are micropower dual and
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LT1078
LT1079
MIL-STD-883C
LT1078AM/883,
LT1079AM/883
50kfl
marking 43e
ScansU9X19
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T 4512 H diode
Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
Text: This documentation and process conversion measures necessary to comply with this revision shall be completed by 22 Oct 94, | INCH-POUND | I_ i MIL-S-19500/4200 22 July 1994 SUPERSEDING MIL-S-19500/420C 15 June 1992 MI L I T A R Y SP EC IF IC AT IO N
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MIL-S-19500/4200
MIL-S-19500/420C
1N5550
1N5554,
1N5550US
1N5554US
MIL-S-19500.
JANHCC1N5551
JANKCA1N5551
1N5552
T 4512 H diode
ps 4512 diode
diode T 4512 H
1N5551US
1N5551
1N5552
1N5554
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistor BFN 23 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 22 NPN
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Q62702-F1064
OT-23
fl235b05
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United Technologies Microelectronics
Abstract: No abstract text available
Text: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet W IUNITED TECHNOLOGIES MICROELECTRONICS ICENTER June 1996 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer
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UT28F64
100mA
500jiA
MIL-STD-883,
8KPROM-2-6-96
United Technologies Microelectronics
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