BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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marking CODE JTS
Abstract: BAS28
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
marking CODE JTS
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! , , Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
BAS28W
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Untitled
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
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marking CODE JTS
Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
marking CODE JTS
BAS28
marking CODE JTS 56
BAS28W
BFP181
BGA420
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Untitled
Abstract: No abstract text available
Text: BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not
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BAS56
OT143B
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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BAS56
Abstract: smd marking l5
Text: BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not
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BAS56
OT143B
AEC-Q101
BAS56
smd marking l5
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! , , Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW101.
BAW101
OT143
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sot143 marking code u1s
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
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BAW101
Abstract: BFP181
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! , , Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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BAW101.
BAW101
OT143
50/60Hz,
BAW101
BFP181
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sot143 marking code u1s
Abstract: BFP181 BGX50A E6327
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
BFP181
BGX50A
E6327
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BAW101
Abstract: BFP181
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! , , Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW101.
BAW101
OT143
BAW101
BFP181
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Diode BGX50A
Abstract: sot143 marking code u1s BFP181 Marking code U1s BGX50A
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking
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BGX50A.
BGX50A
OT143
Diode BGX50A
sot143 marking code u1s
BFP181
Marking code U1s
BGX50A
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marking JTs
Abstract: BAS28 BAS28W
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28W,
BAS28,
marking JTs
BAS28
BAS28W
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BAT17-07
Abstract: VPS05178
Text: BAT17-07 Silicon Schottky Diode 3 For mixer applications in the VHF / UHF range For high-speed switching applications 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAT17-07 57s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings
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BAT17-07
VPS05178
EHA07008
OT143
EHD07108
EHD07109
Jul-31-2001
BAT17-07
VPS05178
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BAW101
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
EHN00019
Sep-24-2003
EHB00104
100mA
BAW101
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chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
Text: BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BGX50A
VPS05178
EHA00007
OT143
EHB00147
EHB00148
Jul-31-2001
EHB00149
chip Marking 3A3
Diode BGX50A
BGX50A
VPS05178
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BAS28
Abstract: VPS05178 BAS28 JTs
Text: BAS28 Silicon Switching Diode Array 3 For high-speed switching applications Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol
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BAS28
VPS05178
EHA07008
OT143
EHB00035
EHB00036
Jul-27-2001
EHB00037
BAS28
VPS05178
BAS28 JTs
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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GCDA15C
Abstract: No abstract text available
Text: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour
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GCDA15C-1
OT143
2002/95/EC
2002/96/EC
GCDA15C-1
GCDA15C-1-GS08
OT143
D-74025
17-Mar-06
GCDA15C
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a3 sot143
Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Text: BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3
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BAR60,
BAR61
BAR60
VPS05178
EHA07013
EHA07014
OT143
a3 sot143
BAR60
BAR61
VPS05178
MARKING 61s
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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