Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING "MA" SOT23 6 Search Results

    MARKING "MA" SOT23 6 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING "MA" SOT23 6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904

    Untitled

    Abstract: No abstract text available
    Text: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and


    Original     		PDF CDA3S06G OT23-6) MDS0903002A

    Comchip Technology

    Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
    Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand


    Original     		PDF CDA3S06-G OT23-6) MDS0903002A Comchip Technology CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16

    electronic schematic

    Abstract: No abstract text available
    Text: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA3S06L Voltage: 8 Volts Current: 50 mA Package SOT23-6 Feature Marking “ CDA3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and


    Original     		PDF CDA3S06L OT23-6) MDS0903002A electronic schematic

    BCW66

    Abstract: BFS17P E6327 marking code MCs
    Text: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage


    Original     		PDF BFS17P VPS05161 BCW66 BFS17P E6327 marking code MCs

    BFS17P

    Abstract: No abstract text available
    Text: BFS17P NPN Silicon RF Transistor 3  For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage


    Original     		PDF BFS17P VPS05161 BFS17P

    BFS17P

    Abstract: No abstract text available
    Text: BFS17P NPN Silicon RF Transistor 3  For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage


    Original     		PDF BFS17P VPS05161 Jul-12-2001 BFS17P

    SOT23-5 marking 016

    Abstract: Marking 305 SOT23-5 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23
    Text: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V


    Original     		PDF MC78LC00 OT23-5 OT-89, OT-23, OT-89 MC78LC00/D SOT23-5 marking 016 Marking 305 SOT23-5 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    MARKING s1P

    Abstract: 99V0
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 Nov-30-2001 2222/A EHP00742 EHP00743 MARKING s1P 99V0

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2907A SMBT2222A VPS05161 Jul-11-2001 2907/A EHP00752 EHP00753

    sot23-5 Marking

    Abstract: MC78LC30HT1G top marking c2 sot23 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C q2 marking sot23-5 MC78LC18
    Text: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 Gnd 1 Vin 2 Vout 3 5 N/C 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V


    Original     		PDF MC78LC00 OT23-5 OT-89, OT-23, OT-89 MC78LC00/D sot23-5 Marking MC78LC30HT1G top marking c2 sot23 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C q2 marking sot23-5 MC78LC18

    Untitled

    Abstract: No abstract text available
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original     		PDF BSS80, BSS82 BSS79, BSS81 VPS05161 BSS80B BSS80C BSS82B BSS82C BSS80

    BSS81C

    Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 BSS79B BSS79C BSS81B BSS81C BSS79 BSS81C BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82

    Untitled

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    BSS80B

    Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original     		PDF BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS80B BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23

    Untitled

    Abstract: No abstract text available
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original     		PDF BSS80, BSS82 BSS79, BSS81 VPS05161 BSS80B BSS80C BSS82B BSS82C BSS80

    BSS79

    Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
    Text: BSS80, BSS82 PNP Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E


    Original     		PDF BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS79 BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    zener y11

    Abstract: zener 472
    Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N


    OCR Scan     		PDF Diodes/SOT23 zener y11 zener 472

    Untitled

    Abstract: No abstract text available
    Text: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5


    OCR Scan     		PDF 350mW Diodes/SOT23 DZ23-C2V7 DZ23-C3 DZ23-C3V3 DZ23-C3V6 DZ23-C3V9 DZ23-C4V3 DZ23-C4V7 DZ23-C5V1

    BF96I

    Abstract: T0-50 s525 BF964S BF96
    Text: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA


    OCR Scan     		PDF OT143 OT343 BF994S BF995 BF996S BF998 S888T BF543 S525T BF96I T0-50 s525 BF964S BF96