power 22E
Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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Original
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Aug-20-2001
EHP00769
power 22E
TRANSISTOR S2A
s2A SOT23
1N916
SMBT3904
SMBT3906
H12E
sot23 transistor marking 12E
IC MARKING NS-05
marking s2A
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PDF
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power 22E
Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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Original
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Nov-30-2001
EHP00769
power 22E
TRANSISTOR S2A
SMBT3906
1N916
SMBT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and
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Original
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CDA3S06G
OT23-6)
MDS0903002A
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PDF
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Comchip Technology
Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand
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Original
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CDA3S06-G
OT23-6)
MDS0903002A
Comchip Technology
CDA3S06-G
SOT23 NE
SS MARKING sot23
TOP marking sot23-6
20 sot23-6 esd
diode network 16
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PDF
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electronic schematic
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA3S06L Voltage: 8 Volts Current: 50 mA Package SOT23-6 Feature Marking “ CDA3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and
|
Original
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CDA3S06L
OT23-6)
MDS0903002A
electronic schematic
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PDF
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BCW66
Abstract: BFS17P E6327 marking code MCs
Text: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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Original
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BFS17P
VPS05161
BCW66
BFS17P
E6327
marking code MCs
|
PDF
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BFS17P
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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Original
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BFS17P
VPS05161
BFS17P
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PDF
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BFS17P
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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Original
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BFS17P
VPS05161
Jul-12-2001
BFS17P
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PDF
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SOT23-5 marking 016
Abstract: Marking 305 SOT23-5 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23
Text: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V
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Original
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MC78LC00
OT23-5
OT-89,
OT-23,
OT-89
MC78LC00/D
SOT23-5 marking 016
Marking 305 SOT23-5
MC78LC00NTR
MC78LC30HT1
MC78LC30NTR
MJD32C
LAL sot23-5
MARKING V32 SOT23
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PDF
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br 2222 npn
Abstract: SMBT2222A SMBT2907A
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
May-29-2001
br 2222 npn
SMBT2222A
SMBT2907A
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PDF
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MARKING s1P
Abstract: 99V0
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2222A
SMBT2907A
VPS05161
Nov-30-2001
2222/A
EHP00742
EHP00743
MARKING s1P
99V0
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PDF
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npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
Jul-11-2001
npn 2222 transistor
s1P SOT23
SMBT2222A SOT23
SMBT2222A
SMBT2907A
MARKING s1P
MARKING 1B SOT23
EHN00056
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBT2907A PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2907A
SMBT2222A
VPS05161
Jul-11-2001
2907/A
EHP00752
EHP00753
|
PDF
|
sot23-5 Marking
Abstract: MC78LC30HT1G top marking c2 sot23 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C q2 marking sot23-5 MC78LC18
Text: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 Gnd 1 Vin 2 Vout 3 5 N/C 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V
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Original
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MC78LC00
OT23-5
OT-89,
OT-23,
OT-89
MC78LC00/D
sot23-5 Marking
MC78LC30HT1G
top marking c2 sot23
MC78LC00NTR
MC78LC30HT1
MC78LC30NTR
MJD32C
q2 marking sot23-5
MC78LC18
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E
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Original
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BSS80,
BSS82
BSS79,
BSS81
VPS05161
BSS80B
BSS80C
BSS82B
BSS82C
BSS80
|
PDF
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BSS81C
Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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Original
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BSS79,
BSS81
BSS80,
BSS82
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
BSS81C
BSS79
BSS79B
BSS79C
BSS80
BSS81
BSS81B
BSS82
|
PDF
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Untitled
Abstract: No abstract text available
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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Original
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BSS79,
BSS81
BSS80,
BSS82
VPS05161
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
|
PDF
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BSS80B
Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23
Text: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E
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Original
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BSS80,
BSS82
BSS79,
BSS81
BSS80B
BSS80C
BSS82B
BSS82C
BSS80
BSS80B
BSS79
BSS80
BSS80C
BSS81
BSS82
BSS82B
BSS82C
marking BSs sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E
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Original
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BSS80,
BSS82
BSS79,
BSS81
VPS05161
BSS80B
BSS80C
BSS82B
BSS82C
BSS80
|
PDF
|
BSS79
Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
Text: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E
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Original
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BSS80,
BSS82
BSS79,
BSS81
BSS80B
BSS80C
BSS82B
BSS82C
BSS80
BSS79
BSS80
BSS80B
BSS80C
BSS81
BSS82
BSS82B
BSS82C
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PDF
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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Original
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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PDF
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zener y11
Abstract: zener 472
Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N
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OCR Scan
|
Diodes/SOT23
zener y11
zener 472
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5
|
OCR Scan
|
350mW
Diodes/SOT23
DZ23-C2V7
DZ23-C3
DZ23-C3V3
DZ23-C3V6
DZ23-C3V9
DZ23-C4V3
DZ23-C4V7
DZ23-C5V1
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PDF
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BF96I
Abstract: T0-50 s525 BF964S BF96
Text: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA
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OCR Scan
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OT143
OT343
BF994S
BF995
BF996S
BF998
S888T
BF543
S525T
BF96I
T0-50
s525
BF964S
BF96
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PDF
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