Untitled
Abstract: No abstract text available
Text: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 Features Options Mark
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MT46H128M16LF
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
256M32
128M32
128M16
64M32
60-ball
09005aef8541eee0
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t1n6
Abstract: T1N2 T3N6 AL02BT1N0 AL02BT1N6 AL02BT3N9 T2N2 400 500MHZ transceiver AL02BT5N6 AL03BT3N3
Text: Viking THIN FILM CHIP INDUCTOR－AL Viking’s 0603 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking design provides high SRF, excellent Q, and superior temperature stability. This highly stable inductor family is specification designed for critical tolerance
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30sec
-40/RT/85/RT,
t1n6
T1N2
T3N6
AL02BT1N0
AL02BT1N6
AL02BT3N9
T2N2
400 500MHZ transceiver
AL02BT5N6
AL03BT3N3
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V56C1512164MD
Abstract: No abstract text available
Text: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 200 MHz 166 MHz 133 MHz 100 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -
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V56C1512164MD
cycles/64ms
60-ball
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Untitled
Abstract: No abstract text available
Text: V56C1G01164MC PRELIMINARY HIGH PERFORMANCE MOBILE 1.8 VOLT 64M X 16 DDR SDRAM 4 BANKS X 16M X 16 5 6 75 unit System Frequency fCK 200 MHz 166 MHz 133 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 ns Output data access Time (tAC (CL3) 5.0 5.0 6.0 ns Features
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V56C1G01164MC
V56C1G01164MC
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V56C1512164MD
Abstract: No abstract text available
Text: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 200 MHz 166 MHz 133 MHz 100 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -
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V56C1512164MD
cycles/64ms
60-ball
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DDR2 x32
Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-G
DDR2 x32
GDDR3 SDRAM 256Mb
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
MICRON gddr3
K4J55323QF-GC20
Gl WL02
Elpida GDDR3
T12N
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DDR2 x32
Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-GC12
K4J55323QF-GC14/16/20
DDR2 x32
GC14
K4J55323QF-GC
K4J55323QF-GC14
K4J55323QF-GC16
t8n 800
ELPIDA DDR User
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K4J55323QF-GC20
Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QF-GC
256Mbit
K4J55323QF-GC20
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
gddr3
Gl WL02
A/SAMSUNG GDDR3
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K4J55323QF-GC20
Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.3 June 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
-GC12
20very
K4J55323QF-GC20
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
K4J55323QF-GC16
DDR2 x32
ELPIDA ddr2 RAM
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Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-GC12
K4J55323QF-Max
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MT29C4G48MAZAPAKQ-5
Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,
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168-Ball
MT29C4G48MAYAPAKQ-5
MT29C4G48MAZAPAKQ-5
MT29C4G48MAZAPAKQ-6
MT29C4G96MAZAPCJG-5
MT29C4G96MAZAPCJG-6
MT29C8G96MAZAPDJV-5
MT29C8G96MAZAPDJV-6
09005aef83ba4387
MT29C4G96M
MT29C4G96MAZAPCJG-5IT
MT29C4G48mazapakq
MT29F8G16
lpddr2 mcp
lpddr2 nand mcp
MT29C8G96
samsung* lpddr2* pop package
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MT29F4G08ABA
Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,
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168-Ball
MT29C4G48MAYAPAKQ-5
MT29C4G48MAZAPAKQ-5
MT29C4G48MAZAPAKQ-6
MT29C4G96MAZAPCJG-5
MT29C4G96MAZAPCJG-6
MT29C8G96MAZAPDJV-5
MT29C8G96MAZAPDJV-6
09005aef83ba4387
MT29F4G08ABA
MT29F8G08A
MT29F4G08ABAD
MT29C4G96MAZ
MT29F4G08ABB
mt29f4g16aba
MT29C4G96M
MT29F4G08AB
smd transistor marking BA1
MT29C8G96
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MT29C4G48MAZBBAKQ-48 IT
Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)
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168-Ball
MT29C4G48MAZBBAKQ-48
MT29C4G96MAZBBCJG-48
MT29C8G96MAZBBDJV-48
09005aef855512a5
168ball
MT29C4G48MAZBBAKQ-48 IT
MT29C8G96MAZBBDJV-48 IT
mt29c4g96
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MT29F4G08ABA
Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,
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168-Ball
MT29C4G48MAYBAAKQ-5
MT29C4G48MAZBAAKQ-5
MT29C4G96MAYBACJG-5
MT29C4G96MAZBACJG-5
MT29C8G96MAYBADJV-5
MT29C8G96MAZBADJV-5
MT29F4G08ABA
MT29C4G48
ELPIDA LPDDR2 POP
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MARKING T6C
Abstract: lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin
Text: Technical Note PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Document No. PX10051EJ35V0TN 35th edition Date Published March 2010 NS NEC Electronics Corporation 2001, 2010 Printed in Japan • The information in this document is current as of March, 2010. The information is subject to change
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PX10051EJ35V0TN
G0706
MARKING T6C
lga 1155
package Code T6S
M33 TRANSISTOR
14SSOP
QFN-36 LAND PATTERN
14LGA
36pin qfn
marking 6-PIN PLASTIC TSON
nec 44pin
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marking 6-PIN PLASTIC TSON
Abstract: MARKING M53 MARKING CODE T5E RENESAS marking code 30SSOP Renesas 30SSOP marking code lga 1155 M33 TRANSISTOR Microwave Devices QFN-52 p5 6pin
Text: PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Common Information www.renesas.com Rev.2.00 Oct 2010 Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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R50ZZ0001EJ0200
marking 6-PIN PLASTIC TSON
MARKING M53
MARKING CODE T5E
RENESAS marking code 30SSOP
Renesas 30SSOP marking code
lga 1155
M33 TRANSISTOR
Microwave Devices
QFN-52
p5 6pin
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T5N630 ABB
Abstract: bs 1600 pir sensor T5N630 1SDA054396R1 1SDA05 magnetic Contactor abb a9-30-10 ABB 145 PM 40-20 Breaker T5N400 ABB 1SDA054404R1 S202MC6
Text: Low Voltage Equipment Innovative Products for the Electrical Contractor - April 2006 Contractor Products Welcome The 5th Edition 1 Welcome to the fifth edition Epack Catalogue which continues to combine a range of products from ABB specially selected for the electrical contractor.
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1TXD000001P0205
T5N630 ABB
bs 1600 pir sensor
T5N630
1SDA054396R1
1SDA05
magnetic Contactor abb a9-30-10
ABB 145 PM 40-20 Breaker
T5N400 ABB
1SDA054404R1
S202MC6
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hynix memory lpddr
Abstract: DDR200 DDR266 DDR333 RA12 PAGE-60 HY5MS5B6LF-H
Text: 256MBit MOBILE ddr SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Aug.2004 Preliminary 0.2 Modify IDD Current Oct.2004 Preliminary
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256MBit
256MBit
16bits)
11Preliminary
16Mx16bit)
00Typ.
hynix memory lpddr
DDR200
DDR266
DDR333
RA12
PAGE-60
HY5MS5B6LF-H
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1HY5RS573225F
Abstract: HY5MS7B6LFP hynix memory lpddr HY5MS7B6LF-H
Text: 512MBit MOBILE DDR SDRAMs based on 8M x 4Bank x16 I/O Document Title 512MBit 4Bank x 8M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun.2005 Preliminary 0.2 Defined DC Characteristics Aug.2006
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512MBit
512MBit
16bits)
11Preliminary
32Mx16bit)
1HY5RS573225F
1HY5RS573225F
HY5MS7B6LFP
hynix memory lpddr
HY5MS7B6LF-H
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Untitled
Abstract: No abstract text available
Text: 512MBit MOBILE DDR SDRAMs based on 8M x 4Bank x16 I/O Document Title 512MBit 4Bank x 8M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun.2005 Preliminary 0.2 Defined DC Characteristics Aug.2006
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512MBit
512MBit
16bits)
32Mx16bit)
11Preliminary
00Typ.
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Untitled
Abstract: No abstract text available
Text: 256MBit MOBILE DDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 1.0 Release Aug. 2006 Final This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256MBit
256MBit
16bits)
16Mx16bit)
00Typ.
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Untitled
Abstract: No abstract text available
Text: singe F D C 3 7 6 9 STANDARD MICROSYSTEMS CORPORATION PC 97 Compliant 3.3V Super I/O Controller With Infrared Support FEATURES 3.3 Volt Operation Intelligent Auto Power Management 16 Bit Address Qualification Optional 2.88MB Super I/O Floppy Disk Controller
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82077AA
FDC37N769
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HIN238
Abstract: No abstract text available
Text: HIN230 thru HIN241 +5V Powered RS-232 Transmitters/Receivers March 1994 Features Description • Meets AM RS-232C and V.28 Specifications The HIN230-HIN241 family of RS-232 transmitters/receivers interface circuits meet all EIA RS-232C and V.28 specifications,
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HIN230
HIN241
RS-232
RS-232C
HIN230-HIN241
HIN231
HIN239)
RS232
HIN238
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Untitled
Abstract: No abstract text available
Text: Preliminary Rev. 0.0 . _ . . . L G b e m i c o n C o .,L td . G M M 2 6 4 2 2 2 7 D N T G 2,097,512 w o r d s x 64 b i t SYNCHRONOUS DYNAMIC RAM SO-DIMM Description Features The GM M 2642227DNTG is a 2M x 64 bits Synchronous Dynamic RAM SO-DiMM w hich is assembled 8 pieces o f 2M x 8 bits
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2642227DNTG
GMM2642227DNTG
GMM2642227DNTG
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