asus motherboard
Abstract: ATI Radeon 9800 pro D865GBF d865gb PC MOTHERBOARD msi SERVICE MANUAL ST3120026A intel D865gbf nFORCE3 intel motherboard display problem repairing intel chipset 986 motherboard repair
Text: AMD Processor Performance Evaluation Guide Mark W. Welker ADVANCED MICRO DEVICES One AMD Place Sunnyvale, CA 94088 Publication # Issue Date: 30579 Revision: December 2003 3.25 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with
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SPD014A
Abstract: No abstract text available
Text: SAW Duplexer 836.5/881.5MHz China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: SPD014A www.sipatsaw.com A. MAXIMUM RATING: RoHS Compliant Lead free Lead-free soldering 1.Input Power Level: 1.2W>50000 Hours, CW tone Ta=50°C
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SPD014A
849MHz
SPD014A
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5231B diode
Abstract: 5251B MARK 8E diode mark 8m sot-23 5237B 5233B 5228B MMBZ5226B MMBZ5257B 5235b
Text: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature
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MMBZ5226B
MMBZ5257B
OT-23
5231B diode
5251B
MARK 8E diode
mark 8m sot-23
5237B
5233B
5228B
5235b
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Untitled
Abstract: No abstract text available
Text: MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C 3 Value Units -55 to +150
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MMBZ5226B
MMBZ5257B
OT-23
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cdma800
Abstract: TF0035A
Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com CDMA800 SAW Duplexer MODEL NO.:TF0035A REV. NO.:2
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CDMA800
TF0035A
TF0035A
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Zener diode 81A
Abstract: zener IN 5232B zener diode voltage list ZENER DIODE 5.1V 1 MARK 8E diode ZENER DIODE 5.1V 5228B 5233B MMBZ5226B MMBZ5257B
Text: Tolerance: B = 5% Absolute Maximum Ratings* Symbol Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature TA = 25°C unless otherwise noted 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.
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OT-23
Zener diode 81A
zener IN 5232B
zener diode voltage list
ZENER DIODE 5.1V 1
MARK 8E diode
ZENER DIODE 5.1V
5228B
5233B
MMBZ5226B
MMBZ5257B
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Zener 5.1V
Abstract: MMBZ5221B Fairchild zener diode 5251b 8f zener MARK 8E diode 5228B MMBZ5257B 5221B
Text: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.
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OT-23
Zener 5.1V
MMBZ5221B
Fairchild zener diode
5251b
8f zener
MARK 8E diode
5228B
MMBZ5257B
5221B
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ma2820
Abstract: 5251B ZENER MARK 22 MMSZ5200 mark B2 MMSZ5257B RoHS Zener 5.1V 5228B 5233B MMSZ5226B
Text: Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation @ 25°C 500 mW RθJA Thermal Resistance, Junction to Ambient * 340 °C/W Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature
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OD-123
OD123
5226B
5227B
5228B
5229B
5230B
5231B
52opment.
ma2820
5251B
ZENER MARK 22
MMSZ5200
mark B2
MMSZ5257B RoHS
Zener 5.1V
5228B
5233B
MMSZ5226B
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5223B
Abstract: 5232B 81E zener diode MMBZ5221B
Text: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.
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MMBZ5221B
MMBZ5257B)
MMBZ5257B
OT-23
OT-23
5223B
5232B
81E zener diode
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sot23 mark code e2
Abstract: 8q diode sot23 MARK 8F SOT-23 mark 8m sot-23 5252b 5251B 8C SOT-23 8F sot23 8Y SOT23 FAIRCHILD SOT-23 MARK 30
Text: Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature 3 Value Units -55 to +150 °C + 150 °C mW mW/°C Total Device Dissipation Derate above 25°C 350 2.8 2
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OT-23
sot23 mark code e2
8q diode sot23
MARK 8F SOT-23
mark 8m sot-23
5252b
5251B
8C SOT-23
8F sot23
8Y SOT23
FAIRCHILD SOT-23 MARK 30
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Zener diode 81A
Abstract: zener diode cross reference 3.9 zener 8v diode 5236B Zener diode 81e 8A SOT23-3 zener diode cross reference zener discrete MMBZ5221B
Text: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature 3 Value Units 350 mW -55 to +150 °C + 150 °C 2 1 SOT-23 *These ratings are limiting values above which the serviceability of the diode may be impaired.
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MMBZ5221B
MMBZ5257B)
MMBZ5257B
OT-23
OT-23
Zener diode 81A
zener diode cross reference 3.9
zener 8v diode
5236B
Zener diode 81e
8A SOT23-3
zener diode cross reference
zener discrete
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5251B
Abstract: 8C SOT-23 5233B mark 8m sot-23 Zener 5.1V 5228B MMBZ5226B MMBZ5257B SOT-23 Zener Diode Zener diode 81A
Text: Tolerance: B = 5% Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value 3 Units TSTG Storage Temperature Range -55 to +150 °C TJ Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C + 150 °C 350
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OT-23
5251B
8C SOT-23
5233B
mark 8m sot-23
Zener 5.1V
5228B
MMBZ5226B
MMBZ5257B
SOT-23 Zener Diode
Zener diode 81A
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SOT23 MARK Y2
Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)
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DO-204AH
DO-35)
OT-23
O-236AA/AB)
MLL4678
MLL4679
MLL4680
L4681
MLL4682
SOT23 MARK Y2
BZXB4C10
MARK Y6 Transistor
SOT23 MARK Y3
1N5239B equivalent
BZXB4C4V7
MMBPU131
glass zener diodes motorola 1n746
B2X84C
1N756A
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-14A
0004B31
ESJA82-ODA
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Untitled
Abstract: No abstract text available
Text: j. 1. scope This specification provide the ratings and the requirements for high voltage silicon diode ESJA82-10A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-10A
ESJA82
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Zener diode 81A
Abstract: 5252B 5246B 18c zener diode MARK 8F Zener diode 81c Zener diode 18A MMBZ5239B 5250B DIODE 8L sot 23
Text: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES L B L • Small Package : SOT-23. -_L : o MAXIMUM RATING Ta=25°C SYMBOL RATING
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MMBZ5221B-5252B
OT-23.
5241B
MMBZ5242B
MMBZ5243B
MMBZ5244B
525IB
5246B
5250B
Zener diode 81A
5252B
18c zener diode
MARK 8F
Zener diode 81c
Zener diode 18A
MMBZ5239B
DIODE 8L sot 23
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5252B
Abstract: Zener diode 81A
Text: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*
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OT-23.
MMBZ5221B-5252B
OT-23
MMBZ5251B
MMBZ5252B
MMBZ5235B
MMBZ5242B
MMBZ5245B
MMBZ5246B
MMBZ5248B
5252B
Zener diode 81A
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Untitled
Abstract: No abstract text available
Text: Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C Value Units
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MMBZ5226B
MMBZ5257B
SG113G
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Untitled
Abstract: No abstract text available
Text: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N at ion al Semiconductor MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* ta Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation
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MMBZ5226B
MMBZ5257B
5245B
5246B
5247B
5248B
5249B
5250B
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MMBZ 52368
Abstract: 5251B 8A SF sc 10 MARK 8E diode DIODE BZ mark 8m sot-23 ml25 5234B 5235B MMBZ5226B
Text: . , Discrete POWER & Signal Technologies Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation
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MMBZ5226B
MMBZ5257B
OT-23
5245B
5246B
5247B
5248B
5249B
5250B
5251B
MMBZ 52368
8A SF sc 10
MARK 8E diode
DIODE BZ
mark 8m sot-23
ml25
5234B
5235B
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MARK 8E diode
Abstract: 5248B 5231B diode mark 8m sot-23 5228B 5233B 5234B MMBZ5226B MMBZ5257B 5226B
Text: Series - MMBZ5257B MMBZ5226B tß D iscrete POWER & S ign al Technologies National Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners T o le ra n c e : B = 5 % Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Value Storage Temperature Range
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MMBZ5226B
MMBZ5257B
5246B
5247B
5248B
5249B
5250B
5252B
5253B
5254B
MARK 8E diode
5231B diode
mark 8m sot-23
5228B
5233B
5234B
5226B
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cal 3200
Abstract: 2RI150E schematic welding inverters
Text: 2 R I 1 5 0 E 2 x i 50A l * f f ö 't '/ i : Outline Drawings PO W ER DIO DE M O DULE 20.0 2C,0 ,20.0 20*0 >*1.5 : Features • X&M. Large Capacitance • JftlUK Insulated Type • Easy Connection • 77 *- M ft (ll» x a g o n B olt and W asfter A s se m b lie s)
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2RI150E
2xi50a)
2RI150E
50/60HzjEftÃ
DDDS113
cal 3200
schematic welding inverters
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ESJA52-14A
Abstract: sis 962
Text: Soec. DATE NAME CHECKED DWG.N0. Thl» m alefici and the Inlorm tllon Itartln I» 1h* p rop o rti o{ Fuji decirle C o .,1.14. They *h«N b« neither rftp'oducnd, copied, U n i, or d le d o ie d In any wiy w hutioever fur Ihe vit» al *r>y third purtjf nor m<d lor il9 ffl#niií«elurlng purpoio
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ESJA52-14A
D00b22b
H04-004-07
0DDti22'
000LE30
ESJA52-OQA
00DbS32
ESJA52-14A
sis 962
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HIGH VOLTAGE DIODE 12kv
Abstract: ESJA52-12A
Text: SPECIFICATION Device Name_ : High Voltage Si Iicon Diods T vpg Name_; E S J A 5 2 ^ 1 2 A _ No._ :_;_ tlil« m nUrial arid the tnformiiUon har«ln |k ih* pro|>firty of Fuji Eltctilc C o.,ltd. Th*y *hid1 b* r«l|h«r reptcKlucsd, çoplitd.
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ESJA52
0DDti21Ã
H04-004-07
ESJA52-12A
EE367S2
ESJA52-QUA
HIGH VOLTAGE DIODE 12kv
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