JESD22-A117
Abstract: TEP011 mar01 SCF384G APS3 SCM288G ISO7816 super harvard architecture block diagram flash "high temperature data retention" mechanism SST superflash
Text: SCM288G Product Brief MAR014 - rev1 SCM288G ‐ Product Brief Trademark Starchip is a registered trademark of Starchip Company. This product uses SuperFlash® technology. Super Flash® is registered trademark of Silicon Storage Technology,
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SCM288G
MAR014
TEP009
SCF384G
TEP011
SCM288G.
SCF320G.
JESD22-A117
mar01
APS3
SCM288G
ISO7816
super harvard architecture block diagram
flash "high temperature data retention" mechanism
SST superflash
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS DESCRIPTION, ECN, EAR NO. DATE APP'D A B PROPOSAL DRAWING EAR 13841 UPDATED AS PER PCN-C1087 MAR04/11 MAR01/12 K.L S.M 1 89.61 3.528 1 REV 3.25 .128 MOUNTING HOLE 34.75 1.368 2.74 .108 TYP. 9.14 .360 TYP. 10.80 .425 2 2 3.30 .130
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PCN-C1087
MAR04/11
MAR01/12
P-DWR-T818P-V236-91
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JESD22-A117
Abstract: SCM320G SCF384G super harvard architecture block diagram arc risc JESD47 ISO7816 iso7816 class c JESD-47 starchip
Text: SCM320G Product Brief MAR014 - rev1 SCM320G ‐ Product Brief Trademark Starchip is a registered trademark of Starchip Company. This product uses SuperFlash® technology. Super Flash® is registered trademark of Silicon Storage Technology,
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SCM320G
MAR014
TEP001
SCF384G
TEP010
SCM320G.
SCF384G.
JESD22-A117
SCM320G
super harvard architecture block diagram
arc risc
JESD47
ISO7816
iso7816 class c
JESD-47
starchip
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JESD22-A117
Abstract: SCF328G subscriber identity module diagram JESD47 starchip super harvard architecture block diagram flash "high temperature data retention" mechanism TEP011 mar01 ISO7816
Text: SCF320G SCF328G - SCF335G Product Brief MAR013 ‐ rev1 SCF320G ‐ Product Brief Trademark Starchip is a registered trademark of Starchip Company. This product uses SuperFlash® technology. Super Flash® is registered trademark of Silicon Storage Technology,
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SCF320G
SCF328G
SCF335G
MAR013
TEP009
SCF320G
TEP011
JESD22-A117
SCF328G
subscriber identity module diagram
JESD47
starchip
super harvard architecture block diagram
flash "high temperature data retention" mechanism
mar01
ISO7816
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82012
Abstract: MARK UU1 TSAL62 TSAL6200 TSOP1130UU1 TSOP1133UU1 TSOP1136UU1 TSOP1137UU1 TSOP1138UU1 TSOP1140UU1
Text: TSOP11.UU1 Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP1130UU1 TSOP1136UU1 TSOP1138UU1 TSOP1156UU1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP1133UU1 TSOP1137UU1 TSOP1140UU1 fo 33 kHz
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TSOP11.
TSOP1130UU1
TSOP1136UU1
TSOP1138UU1
TSOP1156UU1
TSOP1133UU1
TSOP1137UU1
TSOP1140UU1
D-74025
82012
MARK UU1
TSAL62
TSAL6200
TSOP1130UU1
TSOP1133UU1
TSOP1136UU1
TSOP1137UU1
TSOP1138UU1
TSOP1140UU1
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GSM intercom circuit diagram
Abstract: sharc ADSP-21xxx architecture sharc ADSP-21xxx general block diagram sharc 21xxx architecture block diagram sharc ADSP-21xxx ADSST-DAP-EVAL01 fingerprint scanner circuit ADSP-21060 1994 MIP FLOAT LEVEL SWITCH NAT 40 reliance electric 20 hp DC motor drives
Text: 35 DSP Selection Guide 2001 Edition 19:30:35 18:30:35 12:30:35 11:30:35 09:30:35 02:30:35 01:30:35 23:00:35 19:30 Table of Contents Introduction to ADI DSPs 16-Bit DSP Key Products 32-Bit DSP Key Products ADI DSP Overview Markets & Applications Key Benefits
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16-Bit
32-Bit
ADSP-2100
ADSP-21000
AD73xxx
GSM intercom circuit diagram
sharc ADSP-21xxx architecture
sharc ADSP-21xxx general block diagram
sharc 21xxx architecture block diagram
sharc ADSP-21xxx
ADSST-DAP-EVAL01
fingerprint scanner circuit
ADSP-21060 1994
MIP FLOAT LEVEL SWITCH NAT 40
reliance electric 20 hp DC motor drives
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 4.50 .177 2.00 .079 24.00 .945 10.20 .402 4.00 .157 REV DESCRIPTION, ECN, EAR NO. DATE APP'D C PRODUCT DRAWING EAR 13560 JUL10/09 K.L. DATE CODE INK MARKING 1 8.38±0.40 .330±.016 1 18.00 .709 14.00 .551 13.64±0.40 .537±.016
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JUL10/09
MAR01/07
P-MUSB-A211-XX
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ISS 99
Abstract: pressure sensor strain gauge CiDRA temperature gauge sensor pressure sensor STRAIN GAUGE Optical-Pressure-Sensor harsh environment PRESSURE SENSOR ISS 99 diode datasheet electromagnetic transducer
Text: PRELIMINARY BULLETIN PRELIMINARY BULLETIN PRELIMINARY BULLETIN Optical Pressure Sensor Specifications CiDRA Industrial Sensing Solutions ISS introduces an optical pressure measurement system for use in process monitoring applications. This product is based
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10Grms,
May-99
Jul-99
Sep-99
Nov-99
Jan-00
Mar-00
May-00
Jul-00
Sep-00
ISS 99
pressure sensor strain gauge
CiDRA
temperature gauge sensor
pressure sensor
STRAIN GAUGE
Optical-Pressure-Sensor
harsh environment PRESSURE SENSOR
ISS 99 diode datasheet
electromagnetic transducer
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2A1110
Abstract: MUSB-C111-30 P-MUSB-C211-3X P-MUSB-C MUSB-C211-31 450-013 MUSB
Text: 7 8 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F 1.20 30.5 1.46 37.0 .64 16.3 E E 1.96 49.7 .236 6.00 .70 17.8 .76 19.4 .98 24.9 D D .20 5.0 4-40 UNC x 5.5 [.217] LENGTH 2 HOLES C 1.36 34.7 DUST COVER, FOR MORE INFORMATION SEE P-MUSB-2A111-0X4 NOTES:
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P-MUSB-2A111-0X4
MUSB-C111-30,
MAR01/07
P-MUSB-C211-3X
333333MUSB
2A1110
MUSB-C111-30
P-MUSB-C211-3X
P-MUSB-C
MUSB-C211-31
450-013
MUSB
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P2103ND5G
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM35604KA-S •概要 ■特長 ELM35604KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=8.5A
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ELM35604KA-S
P2103ND5G
O-252-5
Mar-01-2005
P2103ND5G
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复合
Abstract: ELM35604KA P2103ND5G
Text: 复合沟道 MOSFET ELM35604KA-S •概要 ■特点 ELM35604KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=8.5A ·Id=-7A
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ELM35604KA-S
O-252-5
Mar-01-2005
P2103ND5G
复合
ELM35604KA
P2103ND5G
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ph76
Abstract: ph77 EM78862 EM78862B EM78869 EM78P862A ph71
Text: EM78862B 8-Bit RISC Type Microprocessor Product Specification VERSION 1.1 ELAN MICROELECTRONICS CORP. March 2005 Specification Revision Chronology Version Revision Description Date 1.0 Initial version Aug. 02, 2004 1.1 Revised operting temp to –40°C ~ 85°C
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EM78862B
Mar-01-2005
ph76
ph77
EM78862
EM78862B
EM78869
EM78P862A
ph71
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Untitled
Abstract: No abstract text available
Text: W8 3 7 92 AD/D W83792AG /G Winbond H/W Monitoring IC CSB Version Date :2005 Nov. Revision: 0.9 W83792AD/AG/D/G PRELIMINARY W83792AD/D Data Sheet Revision History Pages Dates Version Web Version Main Contents 1 Aug-27-2003 N/A Move Low Bit I/II to AEh and AFh
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W83792AG
W83792AD/AG/D/G
W83792AD/D
Aug-27-2003
Sep-12-2003
Sep-16-2003
Nov-06-2003
Jan-05-2004
W83792D
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Untitled
Abstract: No abstract text available
Text: BAT 64-02W Silicon Schottky Diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications 2 • Integrated diffused guard ring • Low forward voltage 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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4-02W
VES05991
SCD-80
50/60Hz,
EHB00059
Mar-01-1999
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P2103ND5G
Abstract: No abstract text available
Text: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)
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ELM35604KA-S
ELM35604KA-S
P2103ND5G
O-252-5
Mar-01-2005
P2103ND5G
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Untitled
Abstract: No abstract text available
Text: 8 7 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F 1.20 30.5 .57 14.5 .64 16.3 1.00 25.4 E E 1.83 46.6 .59 15.0 .70 17.8 .92 23.3 .62 15.6 D .17 4.4 4-40 UNC x 5.5 [.217] LENGTH 2 HOLES .20 5.0 C D 1.64 41.6 NOTES: DUST COVER, FOR MORE INFORMATION SEE P-MUSB-2A111-0X4
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P-MUSB-2A111-0X4
MUSB-C111-30,
MAR01/07
P-MUSB-C311-3X
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pnp array
Abstract: MARKING WW DSA0037426
Text: SEMB4 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ)
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EHA07266
OT666
Mar-01-2004
pnp array
MARKING WW
DSA0037426
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DIN 6784
Abstract: BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75
Text: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3
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BCR153.
BCR153U:
BCR153F/L3
BCR153T
BCR153U
EHA07183
EHA07173
BCR153L3
DIN 6784
BCR153
BCR153F
BCR153L3
BCR153T
BCR153U
SC74
SC75
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170R6
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS DESCRIPTION LTR DATE REV PER ECN O UBO -O I3 3 -0 1 01 MAR01 OWN APVD DEH FA D D W HIT E 0 .2 3 ± 0 .0 2 5
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MAR01
01MAR01
170R6
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. D 12.0 . 4 7 2 REF ASSEMBLED B CABLE TRIM DIMENSIONS HEX CRIMP: 3.8 (,151) A AMP 1 4 7 1 -9 REV 31MAR2000 12 MAR01 10:47am AMP50099
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31MAR2000
MAR01
AMP50099
RD316
12MAR01
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Untitled
Abstract: No abstract text available
Text: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S 6 4 5 3 2 , 19 LOC REVISIONS DI ST AA 23 R ES ER V ED . DESCRIPTION C REACTIVATED: MAR01 -1; EC 0U1C-0098-01 DLD A WR MATERIAL; HOUSING - NYLON HOLDING COHPOOND,
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0U1C-0098-01
22MAR01
254jjm
015jjm
54/jm
26MAR96
00T79
-MAR-01
amp36051
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Untitled
Abstract: No abstract text available
Text: REVISIONS SYlvl ZONE ECN, ERN A NO. DATE PROPOSAL B APPRD . M A R 01 / 1 2 L.CHAN SEPARATE THE LED DRAWING J U N 0 1 / 1 2 L.CHAN YELLOW GREEN 10 OR _ _ 9 OR 12 RED 11 GREEN BI-COLOUR LED DETAIL RED/YELLOW AMD GREEN/ORANGE LED’S ARE ALSO AVAILABLE FRONT VIEW
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OI/12
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ECO-09-020932
Abstract: No abstract text available
Text: 4 3 DRAWING MADE IN THIRD ANG LE PR O JEC TIO N TH IS D R A W I N G IS U N P U B L I S H E D . C CO PYR IG HT 19 R E L E A S E D FOR PU BLIC ATIO N BY AMP IN C O R P O R A T E D . A L L IN T E R N A T IO N A L 2 D IS T LOC ,19 50 Ah R IG H TS R E S E R V E D .
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0G3A-0184-01
ECO-09-020932
21MAR01
08SEP09
ECO-09-020932
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1355046
Abstract: 1355046 junior Power Timer ISO 8015 4-22poL 929504-1 0P05 AMP junior timer contact junior power timer AMP junior power timer contact
Text: Ï 7 C CO PYRIGHT 1995 BY AMP R E L E A S E D FOR P U B L I C A T I O N F R E I F UE R V E R O E F F E N T L I CHUNG ALL R IG H T S R E S E R V E D . INCORPORATED. A L LE R E I C H T E VORBEHALTEN. 1995 6 MATED WITH: P ASSEND ZU: ï ï 5 4 2 3 DI ST LOG 929505
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8-22P05
8-22po
II1J15II7
verarbeit0ng55pez.
4-22P05.
4-22poL.
27jun96
1355046
1355046 junior Power Timer
ISO 8015
4-22poL
929504-1
0P05
AMP junior timer contact
junior power timer
AMP junior power timer contact
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