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    RF MOSFET HEMT 50V
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    MAGX000912125L00 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MAGX-000912-125L00 M/A-COM RF FETs, Discrete Semiconductor Products, TRANSISTOR,GAN,125W 960-1215MHZ Original PDF

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    Abstract: No abstract text available
    Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-000912-125L00 MAGX-000912-125L00

    MAGX-000912-125L00

    Abstract: transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000
    Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration


    Original     		PDF MAGX-000912-125L00 MAGX-000912-125L00 transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000