DM2-2400
Abstract: TIA-329 wifi band radome
Text: Surface Mount & Mag-mount 2.4 & 4.9-6.0 GHz • Available in Single band 2.4 GHz and Dualband 2.4/4.9-6 GHz DM Series in white MGD Dual band Mag Black Only ■ Ground plane independent omni configuration ■ Rugged and attractive low profile ASA radome DM Series in black
|
Original
|
RF-195,
MIL-810G
TIA-329
3900-B
DM2-2400
wifi band
radome
|
PDF
|
RJ45 USB
Abstract: schematic usb to rj45 schematic rj45 to usb 1-100MHZ
Text: 10/100 BASE-T Module with Dual USB RJ-45/USB 8321-8323 • Complies with IEEE standards and all 10/100 Ethernet specifications including 350µH with 8mA DC bias • Various turns ratio options available • Integrated Mag-modular design provides higher reliability and conserves
|
Original
|
RJ-45/USB
RJ-45
03/06/r
-30dB
100kHz,
1500Vrms,
RJ45 USB
schematic usb to rj45
schematic rj45 to usb
1-100MHZ
|
PDF
|
RJ45 USB
Abstract: schematic usb to rj45 8326 schematic rj45 to usb
Text: 10/100 BASE-T Module with Dual USB RJ-45/USB 8324-8326 • Complies with IEEE standards and all 10/100 Ethernet specifications including 350µH with 8mA DC bias • Various turns ratio options available • Integrated Mag-modular design provides higher reliability and conserves
|
Original
|
RJ-45/USB
RJ-45
-30dB
100kHz,
1500Vrms,
RJ45 USB
schematic usb to rj45
8326
schematic rj45 to usb
|
PDF
|
AMMP-6130
Abstract: TL11 TL12 TL13 TL15 TL21 TL22 30433 152082
Text: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication systems. The MMIC takes an input 15
|
Original
|
AMMP-6130
AMMP-6130
AMMP-6130-TR1G
AMMP-6130-TR2G
AV01-0287EN
TL11
TL12
TL13
TL15
TL21
TL22
30433
152082
|
PDF
|
76478
Abstract: 152082
Text: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication systems. The MMIC takes an input 15
|
Original
|
AMMP-6130
AMMP-6130
rel30-TR1G
AMMP-6130-TR2G
AV01-0287EN
76478
152082
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET PS088-315: LGA Packaged Phase Shifter Features Connection Diagram 700–1100 MHz frequency band ● 85–105-degree phase shift range ● 1.5 dB insertion loss variation ● 0–12 V control voltage range ● Specified 33 dBm IP3 @ 900 MHz ● Small footprint LGA package
|
Original
|
PS088-315:
105-degree
PS088-315
100-degree
|
PDF
|
Voltage Doubler with 555 circuit
Abstract: Ko 368 "Frequency doubler" b 537 002 545 18 05 KO 686 single phase to three phase conversion in 3 phase zo 107 AMMP-6130 TL11
Text: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication
|
Original
|
AMMP-6130
AMMP-6130
AMMP-6130-TR2G
AV01-0287EN
AV02-0514EN
Voltage Doubler with 555 circuit
Ko 368
"Frequency doubler"
b 537
002 545 18 05
KO 686
single phase to three phase conversion in 3 phase
zo 107
TL11
|
PDF
|
transistor NEC D 587
Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage
|
Original
|
2SC4885
transistor NEC D 587
transistor NEC D 986
R13* MARKING
TC-2365
marking R13
2SC4885
741 vtvm
230 624 533 392
P10410EJ2V0DS00
transistor NEC D 586
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMMP-6130 30 GHz Power Amplifier with Frequency Multiplier x2 in SMT Package Data Sheet Description Features Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for DBS applications and other commercial communication
|
Original
|
AMMP-6130
AMMP-6130
process06.
AV01-0287EN
AV02-0514EN
|
PDF
|
2SC5289
Abstract: 2SC5192 2SC5288 2SC5289-T1 83942
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
|
Original
|
2SC5289
2SC5289
2SC5192
2SC5288
2SC5289-T1
83942
|
PDF
|
34993
Abstract: 7746-1 transistor ON Semiconductor marking J50 7746-1 NSF2250WT1 NSF2250WT1G 33167 1011 sot323 67723
Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift
|
Original
|
NSF2250WT1
NSF2250WT1
NSF2250WT1/D
34993
7746-1 transistor
ON Semiconductor marking J50
7746-1
NSF2250WT1G
33167
1011 sot323
67723
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift
|
Original
|
NSF2250WT1
NSF2250WT1
NSF2250WT1/D
|
PDF
|
ic sc 4145
Abstract: 62629 ic 3524 datasheet NE68939 NE69039 NE69039-T1 nec 8339
Text: DATA SHEET SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.
|
Original
|
NE69039
NE69039
ic sc 4145
62629
ic 3524 datasheet
NE68939
NE69039-T1
nec 8339
|
PDF
|
2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
|
Original
|
2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Available as: RF AMPLIFIER MODEL TM6131 TM 6131, TN6131, FP6131, BX6131, 4 Pin TO-8 T4 4 Pin Surface Mount (SM3) 4 Pin Flatpack (FP4) Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept P oint
|
OCR Scan
|
TM6131
TN6131,
FP6131,
BX6131,
S11--------Deg
S21---------Deg
S12---------Deg
S22-----Deg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF AMPLIFIER MODEL TM6334 Available as: TM 6134,4 Pin TO-8 T4 TN6134-3 4 Pin Surface Mount (SM3) FP6134-4, 4 Pin Flatpack (FP4) BX6134, Connectorized Housing (H1) _ ^ ^ _ ^ ^ ^ _ _ P N 6 3 3 4 J_Reduced^ize^urface_MountJSM11j_ Features • ■ ■ ■ High Output Power: +26 dBm Typ.
|
OCR Scan
|
TM6334
TN6134-3
FP6134-4,
BX6134,
6334J
MountJSM11j_
S11--------Mag
S21---------Mag
S12---------Mag
S22-------Mag
|
PDF
|
EZ 707
Abstract: 2SC3544 EZ 0710 EZ 728
Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
|
OCR Scan
|
NE944
EZ 707
2SC3544
EZ 0710
EZ 728
|
PDF
|
bfq34 application note
Abstract: ON4497 BFQ34 sf 122 transistor
Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a
|
OCR Scan
|
DD31S5Ã
BFQ34
OT122A
ON4497)
bfq34 application note
ON4497
BFQ34
sf 122 transistor
|
PDF
|
Transistor 78 L 05
Abstract: No abstract text available
Text: P h ilip s Sem ico n d u cto rs b b S B IB l 0031556 036 • APX Product sp ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE fe.'lE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SO T 122A envelope with a ceramic cap. All leads are isolated
|
OCR Scan
|
BFQ34
Transistor 78 L 05
|
PDF
|
1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
|
OCR Scan
|
2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
|
OCR Scan
|
2SC5006
2SC5006
|
PDF
|
BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
|
OCR Scan
|
|
PDF
|
Transistor S 40443
Abstract: No abstract text available
Text: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures
|
OCR Scan
|
bbS3T31
0024T37
BFG197;
BFG197/X;
BFG197/XR
BFG197
BFG197
OT143
BFG197/X
Transistor S 40443
|
PDF
|
transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
|
PDF
|
