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    MACOM MMIC RF AMP Search Results

    MACOM MMIC RF AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    MACOM MMIC RF AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: April 28, 2014 MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40% Power Added Efficiency LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance


    Original     		PDF 41dBm MAAP-015030 41dBm, com/multimedia/home/20140428005116/en/

    Untitled

    Abstract: No abstract text available
    Text: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40%


    Original     		PDF 41dBm MAAP-015030 41drized

    Untitled

    Abstract: No abstract text available
    Text: March 17, 2014 MACOM Introduces Industry's Highest Power, Full E-Band MMIC Power Amplifier Delivers typical saturated output power Psat of 25.5 dBm across the 71 to 86 GHz frequency range for high bandwidth, long distance point to point wireless backhaul


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MAAP-011106 Power Amplifier, 71 - 86 GHz Rev. V1 Features •           Chip Device Layout 4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias


    Original     		PDF MAAP-011106 3780x2500x50Â MAAP-011106

    Untitled

    Abstract: No abstract text available
    Text: October 7, 2014 MACOM Enables Designers to Achieve High Linear Power and Gain Control over the Full EBand Spectrum with New 4 Stage E-Band Driver Amplifier Device delivers typical saturated output power Psat of 24 dBm across the 71 to 86 GHz frequency range for high capacity


    Original     		PDF MAAP-011106

    MAAP-015036

    Abstract: No abstract text available
    Text: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic •       15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture


    Original     		PDF MAAP-015036 MIL-STD-883 MAAP-015036

    Untitled

    Abstract: No abstract text available
    Text: July 1, 2014 MACOM Extends Wired Broadband Portfolio with High Linearity Reverse Path Variable Gain Amplifier This Variable Gain Amplifier boasts excellent linearity and output power for DOCSIS 3.1 network access equipment LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Holdings Inc. ("MACOM"), a leading supplier of high


    Original     		PDF MAAM-011186 com/multimedia/home/20140701005122/en/

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015024 Power Amplifier, 8 W 14.5 - 17.5 GHz Rev. V3 Features •       Functional Schematic 8 W Power Amplifier 20 dB Small Signal Gain 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested


    Original     		PDF MAAP-015024 MIL-STD-833 MAAP-015024

    MAAP-000071-MCH000

    Abstract: MAAP-000071-PKG003 MAAP-000071-SMB003 MAAP-000071-SMB004 S2083 VD12
    Text: RoHS Compliant MAAP-000071-PKG003 Amplifier, Power, 1.6W 12.75-15.35 GHz N/C RF IN N/C N/C VGG Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate MSAG Process. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors


    Original     		PDF MAAP-000071-PKG003 MAAP-000071-PKG0003 APO71G MAAP-000071-SMB003 MAAP-000071-MCH000 MAAP-000071-PKG003 MAAP-000071-SMB003 MAAP-000071-SMB004 S2083 VD12

    MAAPGM0069-DIE

    Abstract: MAAP-000069-MCH000 MAAP-000069-PKG003 MAAP-000069-SMB003 MAAP-000069-SMB004 S2083 AP069G
    Text: RoHS Compliant MAAP-000069-PKG003 Amplifier, Power, 2W 7.1-11.7 GHz Rev — Advance Information Features ♦ 2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP069G XXXX MACOM The MAAP-000069-PKG0003 is a 4-stage 2 W power amplifier with on-chip bias networks in a 20 lead MLP package,


    Original     		PDF MAAP-000069-PKG003 AP069G MAAP-000069-PKG0003 MAAP-000069-SMB003 MAAPGM0069-DIE MAAP-000069-MCH000 MAAP-000069-PKG003 MAAP-000069-SMB003 MAAP-000069-SMB004 S2083 AP069G

    AP067G

    Abstract: APO67G MAAP-000067-PKG0003 MAAP-000067-PKG003
    Text: RoHS Compliant MAAP-000067-PKG003 Amplifier, Power, 2.5W 5.7-8.5 GHz Rev — Advance Information Features ♦ 2.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP067G XXXX MACOM The MAAP-000067-PKG0003 is a 3-stage 2.5 W power amplifier


    Original     		PDF MAAP-000067-PKG003 MAAP-000067-PKG0003 APO67G MAAP-000067-SMB003 AP067G MAAP-000067-PKG003

    Untitled

    Abstract: No abstract text available
    Text: MAAP-011106 Power Amplifier, 71 - 86 GHz Preliminary - Rev. V1P Features •           Chip Device Layout 4 Stage Power Amplifier for E Band 20 dB Gain 15 dB input and output match 25 dBm saturated output power 30 dBm OIP3 Variable gain with adjustable bias


    Original     		PDF MAAP-011106 3780x2500x50Â MAAP-011106

    AP070G

    Abstract: APO70G MAAP-000070-PKG003 S2083 MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 VD12
    Text: RoHS Compliant MAAP-000070-PKG003 Amplifier, Power, 1.6W 10.0-13.25 GHz RF IN N/C N/C M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal


    Original     		PDF MAAP-000070-PKG003 MAAP-000070-PKG0003 APO70G MAAP-000070-SMB003 AP070G APO70G MAAP-000070-PKG003 S2083 MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 VD12

    XD1008-BD-000V

    Abstract: No abstract text available
    Text: XD1008-BD Distributed Amplifier 30 kHz - 40 GHz Rev. V1 Features Chip Device Layout •     15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XD1008-BD MIL-STD-883 XD1008-BD XD1008-BD-000V

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features •        12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested


    Original     		PDF MAAP-015030 MIL-STD-833 MAAP-015030

    Untitled

    Abstract: No abstract text available
    Text: MAAL-011111 Low Noise Amplifier 22 - 38 GHz Rev. V1 Features •      Functional Block Diagram 19 dB Small Signal Gain 2.5 dB Noise Figure Single +3.3 V Bias Lead-Free 3 mm 16-Lead PQFN Package 100% RF Tested RoHS* Compliant and 260°C Reflow Compatible


    Original     		PDF MAAL-011111 16-Lead MAAL-011111

    Untitled

    Abstract: No abstract text available
    Text: ASL882 ASL882 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features • 50 ~ 1200 MHz Bandwidth  22.3 dB High Gain at 1 GHz  Positive Gain Slope  High Output Power: 110 dBV  Robust under Hard Operating Conditions


    Original     		PDF ASL882 ASL882 TSSOP24,

    Untitled

    Abstract: No abstract text available
    Text: XP1027-BD Power Amplifier 27 - 31 GHz Rev. V2 Features 2 5 4 3 V D3 VG3 VD2 V G2 VD1 Functional Diagram Ka-Band 4 W Power Amplifier Balanced Design, Good Input / Output Match 25 dB Small Signal Gain 35 dBm Saturated Output Power 43 dBm Output Third Order Intercept OIP3


    Original     		PDF XP1027-BD DM6030HK

    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar MMIC Cascadable Amplifier MA4TD4135, MA4TD4136 V3.00 Ceramic Microstrip Case Style Outlines1,2,3 Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 1.0 GHz • 15.0 dB Typical Gain @ 0.5 GHz • Unconditionally Stable k>1 • 3.3 Volt Operation


    Original     		PDF MA4TD4135, MA4TD4136 MA4TD4136. MA4TD4135 MA4TD4136 MA4TD4135T

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Rev. V1 Features •        12 W X-Band Power Amplifier 36 dB Small Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested


    Original     		PDF MAAP-015035 MIL-STD-833 MAAP-015035

    915 MHz RFID reader

    Abstract: No abstract text available
    Text: MAAP-007649-000100 Ultra Linear 2W Power Amplifier 800 to 1000 MHz Product Image Features • • • • • • • • • • Rev. V4 HIGH Gain: 19 dB TYP. HIGH P1dB: +34.0 dBm (TYP.) HIGH OIP3: +49.5 dBm (TYP.) 50% PAE @ P1dB Optimized Performance for RFID Bands


    Original     		PDF MAAP-007649-000100 260oC MAAP-007649-000100 915 MHz RFID reader

    S2083

    Abstract: MAAP-000064-SMB004 MAAP-000064-PKG003 MAAPGM0064
    Text: RoHS Compliant MAAP-000064-PKG003 Amplifier, Power, 2W 6.5-9.5 GHz Rev Advance Information Features ♦ 2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP064G XXX MACOM The MAAP-000064-PKG003 is a 2-stage 2.0 W power amplifier


    Original     		PDF MAAP-000064-PKG003 AP064G MAAP-000064-PKG003 MAAP-000064-SMB003 S2083 MAAP-000064-SMB004 MAAPGM0064

    MACOM MMIC RF AMP

    Abstract: No abstract text available
    Text: A fa Silicon Bipolar MMIC Cascadable Amplifier \ M a n A M PP tcom pan y MA4TD4135, MA4TD4136 V3.00 Features Ceramic Microstrip Case Style Outlines1>2>3 • Cascadable 50£2 Gain Block • 3dB Bandwidth: DC to 1.0 GHz • 15.0 dB Typical Gain @ 0.5 GHz • Unconditionally Stable k>l


    OCR Scan     		PDF MA4TD4135, MA4TD4136 MA4TD4135 MA4TD4136 MA4TD4135T MACOM MMIC RF AMP

    MACOM MMIC RF AMP

    Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
    Text: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that


    OCR Scan     		PDF SW-109) SWD-119) MACOM MMIC RF AMP SW-338 SWD-109 SWD-119 DC bias of gaas FET