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    MAAP-000070-PKG003

    Abstract: AP070G MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 S2083 VD12 im339
    Text: RoHS Compliant MAAP-000070-PKG003 Amplifier, Power, 1.6W 10.0-13.25 GHz PIN 1 N/C N/C N/C VGG Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG) Process. The 5 mm PQFN package has a lead-free finish of leads that


    Original     		PDF MAAP-000070-PKG003 260oC MAAP-000070-PKG003 ful03 MAAP-000070-SMB003 AP070G MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 S2083 VD12 im339

    AP070G

    Abstract: APO70G MAAP-000070-PKG003 S2083 MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 VD12
    Text: RoHS Compliant MAAP-000070-PKG003 Amplifier, Power, 1.6W 10.0-13.25 GHz RF IN N/C N/C M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal


    Original     		PDF MAAP-000070-PKG003 MAAP-000070-PKG0003 APO70G MAAP-000070-SMB003 AP070G APO70G MAAP-000070-PKG003 S2083 MAAP-000070-MCH000 MAAP-000070-SMB003 MAAP-000070-SMB004 VD12

    AP070G

    Abstract: MAAP-000070-TR0500 AP070 500 watt RF amplifier GHz MAAP-000070-PKG003 MAAP-000070-SMB003 S2083 VD12
    Text: MAAP-000070-PKG003 Rev. B Amplifier, Power, 1.6W 10.0—13.25 GHZ PIN 1 N/C N/C RF IN N/C The 5 mm PQFN package has a lead-free finish of leads that are RoHS compliant and is compatible with a 260oC reflow temperature. The package also features low lead inductance and an


    Original     		PDF MAAP-000070-PKG003 260oC MAAP-000070-PKG003 AP070G MAAP-000070-TR0500 AP070 500 watt RF amplifier GHz MAAP-000070-SMB003 S2083 VD12