peek 457
Abstract: 180D 00123700 HTG 7000
Text: 4855452 li OSE D g MA554S5 DODöDDfl fi | ~ 08O O8 D * 7 V ¿5.3 -< ¿ 2 3 IN TERNATI ONAL R E C T I F I E R - R34BF SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIME 1.25//S 480 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES W VOLTAGE RATINGS
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08OO8
R34BF
25//S
B34BF
R34BF14A.
D0-200AB
E1017
peek 457
180D
00123700
HTG 7000
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APPENDIX A TTL IC CONNECTION DIAGRAM
Abstract: No abstract text available
Text: MA55452BQB Dual NAND Peripheral Driver FA IR C HILD A S chlum berger C om pany MIL-STD-883 July 1986— Rev 16 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead DIP Top View The (jA55452BQB is a dual high speed general purpose
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MIL-STD-883
MA55452BQB
jA55452BQB
/iA55452BQ
55452BQB
MA55452BQB
CR04900F
APPENDIX A TTL IC CONNECTION DIAGRAM
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PDF
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2N7268
Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
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IRHM7150
IRHM815Q
IRHM8150
JANSRSN7S68
1x106
1x105
IRHM71500
IRHM7150U
2N7268
h206
h208
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PDF
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Untitled
Abstract: No abstract text available
Text: Connectors SMA Panel Mount Receptacles Solder Pot Terminal Type Straight Flange Mount Female Jack Receptacle - 4 Hole Model Number | SM A-5540-15-POT-02 | Note: Standard finish is passivated stainless steel, for gold plating change -02 suffix to -00. Straight Flange Mount Female Jack Receptacle - 2 Hole
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-5540-15-POT-02
SMA-5240-15-POT-02
SMA-5640-15-POT-02
SMA-5140-15-POT-02
-5240-14-POT-02
-5640-14-POT-02
SMA-5140-14-POT-02
-5540-17-POT-02
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PDF
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Untitled
Abstract: No abstract text available
Text: 4ÔSS452 0D1SM1E International gog Rectifier • INR PD-9.868 IRFL210 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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SS452
IRFL210
OT-223
QD1S417
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PDF
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Untitled
Abstract: No abstract text available
Text: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40F
IRGMC40FD
IRGMC40FU
MIL-S-19500
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • 4Ô55452 0017074 3b7 * I N R PD-2.312 International S Rectifier 5o w q o 9 f s o w q io f SCHOTTKY RECTIFIER 5.5 Amp Major Ratings and Characteristics V • Popular D-PAK outline • Sm al foot print, surface mountable lpsM @ tp -5 p ssin e
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O-252AA)
D-474
MA554S2
17D77
50WQ09F
50WQ10F
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 4Ö55452 0017370 bSE D PD-2.253 International S Rectifier i 53c m q . s e r ie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/Features 153CMQ. Units Characteristics lF AV Rectangular The 153CMQ isolated, center tap Schottky rectifier module
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153CMQ.
153CMQ
MA554S2
D017373
D-336
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PDF
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Untitled
Abstract: No abstract text available
Text: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi
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JANTX2N6766
JANTXV2N6766
MIL-PRF-19500/543]
IRF250]
D025132
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER SI E » - 4855452 0013474 351 « I N R Data Sheet No. PD-3.178A INTERNATIONAL RECTIFIER OCT 0 3 1990 4 0 R IF , 5 0 R IF S E R IE S 63A,8QA RMS MediumPower Fast: Turn-off Thyristors Descri pti on / Featu res Major Ratings and Characteristics
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S-16212
NJ07650.
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PDF
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irfbc40
Abstract: No abstract text available
Text: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary
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IRFBC40
O-220AB
C-405
IRFBC40,
IRFBC42
C-406
irfbc40
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin 12077/A International S Rectifier SD150N/R SERIES Stud Version STANDARD RECOVERY DIODES Features • W ide current range ■ High voltage ratings up to 2500V ■ High surge cu rre n t c a p a bilitie s ■ Stud cathode and stud anode version ■ S tandard JEDEC types
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12077/A
SD150N/R
180PC
MA554S2
002bfl2t>
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PDF
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THYRISTOR BST N 45 B 90
Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Text: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate
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itfl55452
554S2
001fc
65ohms
500Msf
THYRISTOR BST N 45 B 90
thyristor bst m 45 90
Thyristor bst 2
HALF WAVE 45 E 57 20-C1V
thyristor YS 160 004
11111I
D226 diode
irkt91-18
L9500
thyristor bt 3A
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PDF
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Untitled
Abstract: No abstract text available
Text: International Iö R Rectifier Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 12 to 18V
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IR2125
IR2125
DD27b47
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PDF
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD - 2.269A 62CNQ030 SCHOTTKY RECTIFIER 60Amp Major Ratings and Characteristics Characteristics Desciption/Features 62CNQ030 Units lp AV Rectangular waveform 60 A Vrrm 30 V Ifsm @ tp = 5ps sine 4600 A VF 0.35 V -55 to 150 °C @ 30Apk, Tj = 125°C
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62CNQ030
60Amp
30Apk,
62CNQ030
RH89BB,
Mfl554S2
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PDF
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IR8200B
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4ß55452 QQlfllbS 413 ■ INR Data Sheet No. PD-6.012A INTERNATIONA!. RECTIFIER I O R IR8200B 3A, 5 5 V DMOS H-BRIDGE POWER INTEGRATED CIRCUIT 11-PIN MOLDED SIP General Description Features The IR8200B is a 3A H-Bridge designed for motion
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IR8200B
11-PIN
IR8200B
LM3525A
5SM52
QG1S172
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PDF
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IRH254
Abstract: Alps 250k G-741 G741 40554 104/ 250V mf ALPS 102
Text: 11E 0 I IN TER N A TIO N A L R E C T I F I E R 4ÖS54S2 □QQci7b2 3 | Preliminary Data Sheet No. PD-9.478A T INTERNATIONAL RECTIFIER IÖ R HEX F ET TRANSISTORS IRHS54 IM-CHANIMEL s RAD HARD 250 Volt, 0.19Q, Rad Hard HEXFET International R e c tifie r's RAD HARD H E X F E T s
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S54S2
G-748
MA554
IRH254
T-39-13
G-749
Alps 250k
G-741
G741
40554
104/ 250V mf
ALPS 102
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PDF
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International Rectifier 16f series
Abstract: No abstract text available
Text: Bulletin 120204 International S Rectifier 16F R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 16 A High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM
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0100s
4A55452
International Rectifier 16f series
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PDF
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MOSFET J132
Abstract: J132 MOSFET J133 mosfet transistor G524 IRFJ132 T0-213AA J133 mosfet IRFJ130 j132 mosfet j133
Text: H E D | 4 Û SS4 S2 □ □□ci544 4 | Data Sheet No. PD-9.398A INTERNATIONAL R E C T I F I E R T-3 9 -11 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N -C H A N N E L P O W E R I O R IRFJ130 IRFJ131 f \ 1— 4 \ IRFJ132 M O S F E T s IRFJ133 100 Volt, 0.18 Ohm HEXFET
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T-39-11
IRFJ130
IRFJ131
IRFJ132
IRFJ133
IRFJ130,
G-525
IRFJ131,
MOSFET J132
J132 MOSFET
J133 mosfet transistor
G524
T0-213AA
J133 mosfet
j132
mosfet j133
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PDF
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Untitled
Abstract: No abstract text available
Text: International í«? Rectifier PD-9.967C IRGKI165F06 “CHOPPER" IGBTINT-A-PAK Fast Speed IGBT Vce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10K H z hard switching, or 50 K H z resonant • Switching-Loss Rating includes all "tail"
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IRGKI165F06
C-181
4A554S5
C-182
|
PDF
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IRF1010S
Abstract: AIT smd
Text: MÖ55HS2 GG14Ö00 International k Rectifier =163 • IN R PD-9.923 IRF1010S INTERNATIONAL HEXFET® Power M O SFET RECTIFIER Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated
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55H52
IRF1010S
SMD-220
AIT smd
|
PDF
|
C828 transistors
Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Text: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"
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IRGTI115U06
25KHz
100KHz
C-829
100nH
0020b20
C-830
C828 transistors
c828
tr c828
tr c828 c829
c829
tr c829
c828 02
diode c829
c826
C825 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: MflSSMS2 0015332 330 M I N R International lj«R Rectifier _ IRL510S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • rU'y'yU Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive
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IRL510S
SMD-220
|
PDF
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Untitled
Abstract: No abstract text available
Text: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents
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4A554S2
D014baD
O-220
IRF610
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PDF
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