Untitled
Abstract: No abstract text available
Text: MA4P156 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 40 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.100f Carrier Lifetime (S)15n @I(F) (test) (A) @I(R) (A) (Test Condition)10m Maximum Operating Temp (øC)175
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MA4P156
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MA47600
Abstract: No abstract text available
Text: Silicon PIN Diode Chips Features • GLASS OR SILICON DIOXIDE PASSIVATION 131 ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS ■ VOLTAGE RATINGS TO 2000 VOLTS ■ WIDE RANGE OF PIN CHARACTERISTICS
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MIL-STD-883,
MA4P504
MA4P606
MA47600
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MA47047
Abstract: 65X65 MVA attenuator MA4P150 MA4P151 MA4P152 MA4P153 MA4P154 MA4P155 MA4P156
Text: AtÜKO'1 M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass or Silicon Dioxide Passivation Hermetically Sealed CERMACHIP Design Fast Speed, Low Loss Microwave Chips Attenuator Chips Voltage Ratings to 1500 Volts
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MIL-STD883,
MA47047
65X65
MVA attenuator
MA4P150
MA4P151
MA4P152
MA4P153
MA4P154
MA4P155
MA4P156
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im 308-c
Abstract: ma47047
Text: M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass o r Silicon D ioxide Passivation H erm etically Sealed CERMACHIP Design Fast Speed, Low Loss M icrowave Chips A ttenuator Chips Voltage Ratings to 1500 Volts W ide Range of PIN Characteristics
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MIL-STD883,
im 308-c
ma47047
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a4p50
Abstract: No abstract text available
Text: M/A-COM SEMICONDiBRLNGTON /y m 11 SL.42214 DDQlllfl G • M I C ‘ T ~ 6 T ~ * Silicon PIN Diode Chips Features ■ GLASS OR SILICON DIOXIDE PASSIVATION ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS
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5b42214
QDD112S
a4p50
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MILITARY DIODES
Abstract: No abstract text available
Text: M t/X & A Silicon PIN Diode Chips Features • GLASS OR SILICON DIOXIDE PASSIVATION ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS ■ VOLTAGE RATINGS TO 2000 VOLTS ■ WIDE RANGE OF PIN CHARACTERISTICS
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OCR Scan
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assembli10-332-6789
MILITARY DIODES
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MA47420-132
Abstract: MA47054 ma8334 diode 4P604 4p60 MA4PH301 ma-47266 MA4P9 MA4P504-132 MA8334
Text: PIN DIODE SELECTION GUIDE SILICON BEAM LEAD PIN DIODES Specifications @ T a = 25°C MODEL NUMBER VOLTAGE RATING volts MAXIMUM CAPACITANCE (PF) MA4P800 MA4P801 MA4P802 MA4P803 MA4P461 MA4P462 100 100 100 100 50 30 .025 .030 .040 .050 .070 .120 MAXIMUM Rs
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MA4P800
MA4P801
MA4P802
MA4P803
MA4P461
MA4P462
MA4P150
MA4P151
MA4P152
MA4P153
MA47420-132
MA47054
ma8334 diode
4P604
4p60
MA4PH301
ma-47266
MA4P9
MA4P504-132
MA8334
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Untitled
Abstract: No abstract text available
Text: an A M P com pany PIN Diode Chips V 2.00 Features • C E R M A C H IP glass or Silicon Dioxide Passivation o • Herm etically Sealed C E R M A C H IP Design • Fast Speed, Lo w Loss M icro w ave Chips • Attenuator Chips • Voltage Ratings to 1500 Volts
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MIL-STD883,
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MA4P275S
Abstract: MA47111 ma47047 ma4p274ck MA4P303-30 MA4P202-134 MA47054 MA47420 ma4gp030 ma-47266
Text: PIN Diodes S E L E C T IO N G U ID E 1- 3 M O D EL N U M B ER M O D EL 1 N 5719. . . 1N5767 MA47041 MA47047 MA47053 . MA47054 MA47055 . MA47056 MA47057 . MA47058 MA47059 MA47100 MA47110 MA47111 MA47120 . MA47123 MA47200 MA47201 MA47202 MA47203 MA47204 MA47205
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1N5767
MA47041
MA47047
MA47053
MA47054
MA47055
MA47056
MA47057
MA47058
MA47059
MA4P275S
MA47111
ma4p274ck
MA4P303-30
MA4P202-134
MA47420
ma4gp030
ma-47266
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MA40285
Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Text: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238
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1N5165
1N5166
1N5167
1N5712
1N5713
1N5767
2N2857
2N3570
2N3571
2N3572
MA40285
ma4882
MA40150
MA46H201
masw2070g1
MA46H206
MA47203
JANTX2N2857
MA4P9
MA40420
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