Untitled
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR E?E D Sb421fi3 Q00D2Sb 5 r-si • / MA4GM210-500 GaAs MMIC DC-10 GHz SPDT Switch Chip Features ■ BROADBAND DC - 10 GHz ■ 3 NANOSECOND SWITCHING ■ LOW POWER CONSUMPTION ■ LOW LOSS ■ HIGH ISOLATION ■ HIGH RELIABILITY Description
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Sb421fi3
Q00D2Sb
MA4GM210-500
DC-10
MA4GM210
MA4GM210-500
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Untitled
Abstract: No abstract text available
Text: ¡PHj yg* y O l l i i lia * Ml M1 11| fi « Im & i t e rt, ^ S H « j» fê l f f i 4 $T ^ ¿M MA4GM201 '20000 MA4GM201-T5. . MA4GM201-500. . MA4GM211-500. . MA4GM202-2000. MA4GM202-T5. . MA4GM202-500. . MA4GM202L-2000 MA4GM202L-T5. MA4GM202L-500. MA4GM202-D14S
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MA4GM201
MA4GM201-T5.
MA4GM201-500.
MA4GM211-500.
MA4GM202-2000.
MA4GM202-T5.
MA4GM202-500.
MA4GM202L-2000
MA4GM202L-T5.
MA4GM202L-500.
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MA4GM211-500
Abstract: No abstract text available
Text: GaAs FET MMIC Products Capability Guide GaAs MMIC SP4T SWITCH MA4GM204 SERIES Features • DC TO 2 GHz ■ SWITCHING SPEED TO 70 NANOSECONDS ■ LOW INSERTION LOSS TO 2 GHz ■ AVAILABLE WITH TTL COMPATIBLE DRIVER Description Specifications @ T a = 25°C This monolithic SP4T switch device is available in chip form
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MA4GM204
MA4GM204-500J)
MA4GM204D-2016)
ODS2016.
MA4GM201-500A
MA4GM211-500B
M202-500C
M202L-500D
MA4GM212-500E
MA4GM316-500F
MA4GM211-500
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4GM201
Abstract: No abstract text available
Text: n/A-COM ADV S E M I C O N D U C T O R S7E D SbMEiaB DÜQ051Q 3 MA4GM201-2000 2010 2012 MA4GM201 SERIES 2100 GaAs MMIC DC-2 GHz SPST Switch Features • BROAD BANDWIDTH: DC - 2 GHz ■ 3 NANOSECOND SWITCHING 4GM201 ■ EXCELLENT INTERMODULATION PRODUCTS AND TEMPERATURE
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Q051Q
MA4GM201
MA4GM201-2000
4GM201
4GM201
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MA4GM202LT-2010
Abstract: No abstract text available
Text: M/A-COfl ADV SEMICONDUCTOR 27E D 5b451Ô3 G0ÜD2MÔ b A U Q O M If r* s i-li MA4GM202LT-500 2000 2010 2012 2100 MA4GM202LT SERIES GaAs M M 1C DC-2 GHz SPOT Switch Features • BROAD BANDWITH DC-2 GHz ■ 3 NANOSECOND SWITCHING ■ LOW DISTORTION ■ LOW SWR REFLECTIVE
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5b451
MA4GM202LT-500
MA4GM202LT
Sb42ifl3
MA4GM202LT-2010
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x-band mmic
Abstract: No abstract text available
Text: M / A - CO M ADV S E M I C O N D U C T O R 57E D 5fc>M21fl3 O G O D É1 Ô fi r-5/// MA4GM261 and MA4GM262 GaAs MMIC 8-12 GHz X-Band] SPST and SPOT Switch Chips Features • HIGHER ISOLATION THAN BROADBAND SWITCHES ■ LOWER LOSS THAN BROADBAND SWITCHES .
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M21fl3
MA4GM261
MA4GM262
MA4GM262
DC-12
Sk421fl3
MA4QM261
x-band mmic
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truth table for 4 to 16 decoder
Abstract: truth table for 1 to 4 decoder truth table for 1 to 16 decoder truth table MA4GM204MDE-2032S
Text: M/A-COM ADV SEMICONDUCTOR S7E D 5tM 21S3 00002=10 5 -r-s i-u MA4GM204MD-2032S GaAs MMIC 5 MHz - 2 GHz SP4T Matched Switch W ith Driver Features • BROAD BANDWIDTH 5 MHz - 2 GHz ■ MATCHED ALL PORTS ■ 50 NANOSEC SWITCHING ■ LOW LOSS 2 dB at 1 GHz ■ LOW CURRENT CONSUMPTION
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MA4GM204MD-2032S
MA4GM204MD-2032S
MA4GM204MDE-2032S
t04MDE-2032S
truth table for 4 to 16 decoder
truth table for 1 to 4 decoder
truth table for 1 to 16 decoder
truth table
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Untitled
Abstract: No abstract text available
Text: M/A-CÔM MM ADV SEMICONDUCTOR 57E D S b M S I Ô B 0 0 0 0 22 b ? T -S I • !/ MA4GM202T-500 2000 2010 2012 2100 MA4GM202T SERIES GaAs M M IC D C -4 GHz SPDT Switch Features ■ BROAD BANDWIDTH: DC - 4 GHz ■ < 3 NANOSECOND SWITCHING jy S K X M ■ CURRENT CONSUMPTION ¿100 ¡jA
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MA4GM202T-500
MA4GM202T
000D23D
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Untitled
Abstract: No abstract text available
Text: M / A - C O M ADV S E M I C O N D U C T O R MA' 27E I> 5 b 4 2 i a 3 0 0 0 D S 7 Ô .4 MA4GM204L-500 GaAs M M IC D C -2 GHz SP4T Switch Features • BROAD BANDWIDTH DC - 2 GHz ■ SMALL SIZE ■ 3 NANOSECOND SWITCHING ■ LOW LOSS 1 dB @ 1 GHz ■ LOW CURRENT CONSUMPTION ^100 /xA
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5b42ia3
000DS7Ô
MA4GM204L-500
MA4GM204L-500
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ADV 1003
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR S7E D S t.4 2 1 0 3 Qd'DDEbM H MA4GM272-500 GaAs MMIC DC-2 0 GHz SPOT Switch Features • BROAD BANDWIDTH: DC -1 8 GHz ■ 3 NANOSECOND SWITCHING ■ LOW POWER CONSUMPTION FET BASED TECHNOLOGY ■ EXCELLENT INTERMODULATION PRODUCTS AND TEMPERATURE
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MA4GM272-500
MA4GM272-500
ADV 1003
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truth table
Abstract: MA4GM2
Text: M / A - cC oO M n AD V S E M I C O N D U C T O R E7 E D m 5 1»*4E 1 B 3 0 0 0 0 3 2 6 4 • AfiAi 62 I} MA4GM251 GaAs M M IC C-Band 4 - 8 GHz Receiver Protector Switch Chip Features ■ ISOLATES RECEIVER BY 40 dB ■ LOW INSERTION LOSS (0.4 dB) ■ RETURN LOSS IN INSERTION LOSS
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MA4GM251
MA4GM251-500
truth table
MA4GM2
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IC 555 pin DIAGRAM and truth table
Abstract: No abstract text available
Text: n/A-COM ADV SEMICONDUCTOR SbMSlßB 0 0 Q D 2 a a 7 57E D T-51 It MA4GM204LD-2019 GaAs M M IC DC - 2 GHz SP4T Switch W ith Driver Features • BROAD BANDWIDTH DC - 2 GHz ■ 100 NANOSECOND SWITCHING ■ LOW LOSS 2 dB @ 1 GHz ■ BIPOLAR DRIVER, TTL COMPATIBLE
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MA4GM204LD-2019
MA4GM204LD-2019
QD2019)
IC 555 pin DIAGRAM and truth table
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Untitled
Abstract: No abstract text available
Text: N/A-COM jq m ADV S E M I C O N D U C T O R B7E D 5b451ö3 OOOOSDö 5 T- 51-11 MA4GM201T-500 GaAs MMIC DC-4 GHz SPST Switch Chip Features • BROAD BANDWIDTH: DC - 4 GHz ■ VERY FAST SWITCHING (3 NS) ■ VERY LOW POWER CONSUMPTION (FET BASED TECHNOLOGY)
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5b451
MA4GM201T-500
MA4GM201T
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Untitled
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR Ajffe 57t D SL4E1Ô3 000D240 1 T - s t / t MA4GM202MT-500 MA4GM202MT SERIES 2000 2012 2100 GaAs M M IC D C -4 GHz SPDT Absorptive Switch Features • BROAD BANDWIDTH: DC - 4 GHz ■ EXCELLENT INTERMODULATION PRODUCTS AND TEMPERATURE
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000D240
MA4GM202MT-500
MA4GM202MT
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J2JL
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR 27E D 51=42103 0Ü002Ö2 h T - 5 ! ‘ I I MA4GM204MC-500* GaAs MMIC D C -2 GHz SP4T Matched Switch i f lift,!,il «• 1^ 11 « . _L k +3] ft t- Features ■ BROAD BANDWIDTH DC - 2 GHz ■ LOW DISTORTION OPTION T il'rtT ■ 3 NANOSECOND SWITCHING
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MA4GM204MC-500*
MA4GM204MC-500
J2JL
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Untitled
Abstract: No abstract text available
Text: M/A-COM AD V SEMICONDUCTOR 57É D • 5b421S3 0DD02t.fi 1 MA4GM202MD-2009 GaAs MMIC SPDT RF Switch Features ■ ALL RF PORTS MATCHED ■ LOW DC POWER CONSUMPTION ■ INTEGRAL CMOS DRIVER IDC < 5 mA ■ TTL COMPATIBLE DRIVE ■ BROADBAND DC - 4 GHz SWITCH SCHEMATIC
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5b421S3
0DD02t
MA4GM202MD-2009
MA4GM2O2M-2O09
MA4GM202M-2009
MA4GM202M-P14.
MA4GM202MD-2009
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Untitled
Abstract: No abstract text available
Text: fl/A-COM ADV S E M I C O N D U C T O R 27E D • SbM21fl3 O Q O O Bi b T New Products f iO k PART NUMBER * T DESCRIPTION/FEATURES S h l i NOMINAL* ELECTRICAL CHARACTERISTICS MA4GM202MD-2016S SP2T 5 MHz - 2 GHz Matched W/CMOS Driver Single Bias + 5 Volts 12 Pin Flat Pack - ODS-2016
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SbM21fl3
MA4GM202MD-2016S
ODS-2016
ODS-2014
ODS-2039
ODS-2019
ODS-2009
Reflect085
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MA4GM-D14S
Abstract: MA4GM202M
Text: M/A-COM A jlA i ADV SEMICONDUCTOR 2?E D S t MS1Ö3 0000272 3 'T -S / • I MA4GM202MD-2009S Single Bias Supply GaAs MMIC SPDT RF Switch Features • BROAD BANDWIDTH 5 MHz - 4 GHz ■ ALL RF PORTS MATCHED ■ INTEGRAL CMOS DRIVER IDC <1 mA ■ TTL COMPATIBLE DRIVE
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MA4GM202MD-2009S
MA4GM202M-2009S
MA4GM-D14S.
MA4GM-D14S
MA4GM202M
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DG1500
Abstract: No abstract text available
Text: M/ AA -VCO 11/ .' M Apa< MV SEMICONDUCTOR 57E D • S t M B l ô 3 0D0 0 23 b T ■ =#T I r .5 /- /; MA4GM202MF-500 MA4GM202MF SERIES 2012 2100 GaAs M M IC D C -4 GHz SPOT Absorptive Switch Features ■ INDEPENDENT BIAS CONTROL FOR ALL GATES ■ BROAD BANDWIDTH: DC - 4 GHz
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MA4GM202MF-500
MA4GM202MF
DG1500
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Untitled
Abstract: No abstract text available
Text: M / A - C Ô M ADV S E M I C O N D U C T O R 5?E D 5b421fl3 D0D D 21 4 0 rs iii MA4GM201MC-500* GaAs M M IC DC -4 GHz SPST Switch Features • BROAD BANDWIDTH ■ FAST SWITCHING 3 NANOSECONDS ■ VERY LOW POWER CONSUMPTION (FET BASED TECHNOLOGY) ^100 ¡xA
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5b421fl3
MA4GM201MC-500*
C-500
MA4GM201MC-500
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Untitled
Abstract: No abstract text available
Text: M/A-COM AI>V SEMICONDUCTOR Am 57E D 5bM21fl3 0ÜDDE32 5 T 'S / - // MA4GM202F-500 2000 2012 2100 MA4GM202F SERIES GaAs M M IC D C -4 SPDT Switch Features • BROADBAND: DC - 4 GHz ■ CURRENT CONSUMPTION <100 /¿A ■ 3 NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION
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5bM21fl3
DDE32
MA4GM202F-500
MA4GM202F
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Untitled
Abstract: No abstract text available
Text: /qm M/A - CO M ADV S E M I C O N D U C T O R E7E D 5L.4E1Ö3 00 G0 54 4 T r•siii MA4GM202L-2000 202L-2010 202L-2012 MA4GM202L SERIES 202L-2100 GaAs MMIC DC-2 GHz SPDT Switch Features ■ LOW LOSS ■ 3 NANOSECOND SWITCHING ■ EASILY CASCADABLE ■ HIGH RELIABILITY
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MA4GM202L-2000
MA4GM202L
202L-2010
202L-2012
202L-2100
MA4GM202L-2000
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MA4G
Abstract: GaAs FET chip dca300 MA4GM212-500 M202-2000 MA4GM202-T5
Text: AJÎKOvi GaAs FET MM 1C Broadband Control Products Capability Guide Features • DC TO 18 GHz OPERATION ■ EXTREMELY LOW DC POWER CONSUMPTION ■ NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION ■ LOW INSERTION LOSS ■ EXCELLENT TEMPERATURE STABILITY
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MA4GM2
Abstract: No abstract text available
Text: GaAs FET MMIC Control Product Process Screening and Quality Procedures In processing G aAs FE T MMIC Control Products, consistency and reproducibility is ensured by measuring key electrical parameters on each wafer at the main steps and using the results for statistical process control. If a process goes out
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