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    SMA-214

    Abstract: Tracer 176 Scans-053 high power FET transistor s-parameters
    Text: 5642214 M/A-COM SEMICONDUCTOR "H/ A- COH SEMICONDUCTOR 93D 0 0 6 4 2 T3 DE|Sma214 /• T - 3 % a 7 DQOOk« 1 M 5KC MA4F300 Series Galiium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F300 series is a 1 micron recessed gate


    OCR Scan     		PDF Sma214 MA4F300 SMA-214 Tracer 176 Scans-053 high power FET transistor s-parameters

    MA4F004

    Abstract: No abstract text available
    Text: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300

    MICROWAVE ASSOCIATES

    Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
    Text: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		PDF MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600

    MICROWAVE ASSOCIATES

    Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
    Text: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		PDF 00L30 MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298

    FET transistors with s-parameters

    Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
    Text: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF 000Db25 MA4F004 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 FET transistors with s-parameters MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918