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    MA3X717 Price and Stock

    Panasonic Electronic Components MA3X71700L

    DIODE SCHOTTKY 30V 30MA MINI3-G1
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    DigiKey MA3X71700L Digi-Reel 1
    • 1 $0.4
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    MA3X71700L Cut Tape 1
    • 1 $0.4
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    MA3X71700L Reel 3,000
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    Quest Components MA3X71700L 2,400
    • 1 $0.64
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    • 1000 $0.192
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    Panasonic Electronic Components MA3X717D0L

    DIODE ARR SCHOTT 30V 30MA MINI3
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    MA3X717D0L Digi-Reel 1
    • 1 $0.76
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    Panasonic Electronic Components MA3X717E0L

    DIODE ARR SCHOTT 30V 30MA MINI3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MA3X717E0L Digi-Reel 1
    • 1 $0.76
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    MA3X717E0L Cut Tape
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    MA3X717E0L Reel
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    Quest Components MA3X717E0L 2,400
    • 1 $1.08
    • 10 $1.08
    • 100 $1.08
    • 1000 $0.432
    • 10000 $0.378
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    MA3X717 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MA3X717 Panasonic Silicon epitaxial planar type Original PDF
    MA3X717 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3X717 Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA3X71700L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.03A MINI3 Original PDF
    MA3X717D Panasonic Silicon epitaxial planar type Original PDF
    MA3X717D Panasonic Diode Original PDF
    MA3X717D Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3X717D0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA MINI3 Original PDF
    MA3X717E Panasonic Silicon epitaxial planar type Original PDF
    MA3X717E Panasonic Diode Original PDF
    MA3X717E Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3X717E0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA MINI3 Original PDF

    MA3X717 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717E MA717WK) MA3X717 MA3X704E

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


    Original     		PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    MA3X704A

    Abstract: MA3X717 MA704A MA717
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) MA3X717 MA717) MA3X704A MA704A) MA3X704A MA3X717 MA704A MA717

    MA3X704A

    Abstract: MA3X717 MA704A MA717 generator 10 Ghz
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717 MA717) MA3X704A MA704A) MA3X704A MA3X717 MA704A MA717 generator 10 Ghz

    MA3X704A

    Abstract: MA3X717 MA717 panasonic ma diodes sc-59 Marking
    Text: Schottky Barrier Diodes SBD MA3X717 (MA717) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 1 + 0.1 3 + 0.1 0.16 − 0.06 0.8 1.1 − 0.1 + 0.2 2 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 • Absolute Maximum Ratings Ta = 25°C 0.4 − 0.05 0.95 0.65 ± 0.15


    Original     		PDF MA3X717 MA717) MA3X704A) O-236 SC-59 MA3X704A MA3X717 MA717 panasonic ma diodes sc-59 Marking

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717D MA717WA) MA3X717 MA3X704D

    1010IR

    Abstract: MA3X704D MA3X717 MA3X717D MA717WA
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717D MA717WA) MA3X717 MA3X704D 1010IR MA3X704D MA3X717D MA717WA

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl


    Original     		PDF 2002/95/EC) MA3X717 MA717) MA3X704A MA704A)

    104 M3D

    Abstract: MA3X717D MA3X717E DSA003719
    Text: Schottky Barrier Diodes SBD MA3X717D, MA3X717E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V 30 mA Forward current (DC) Single Peak forward current Single IF Double* 150 Double*


    Original     		PDF MA3X717D, MA3X717E O-236 SC-59 MA3X717s 104 M3D MA3X717D MA3X717E DSA003719

    MA704WK

    Abstract: MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA717 MA717WA MA717WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717D (MA717WA), MA3X717E (MA717WK) Silicon epitaxial planar type Unit: mm 2 1 (0.65) • Two MA3X717 (MA717) is contained in one package • Forward voltage VF, optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717D MA717WA) MA3X717E MA717WK) MA3X717 MA717) MA3X704D MA704WA) MA3X704E MA704WK MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA717 MA717WA MA717WK

    MA3X704E

    Abstract: MA3X717 MA3X717E MA717WK generator 10 Ghz
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717E MA717WK) MA3X717 MA3X704E MA3X704E MA3X717E MA717WK generator 10 Ghz

    MA3X704E

    Abstract: MA3X717 MA3X717E MA717WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717E MA717WK) MA3X717 MA3X704E MA3X704E MA3X717E MA717WK

    MA717WK TO-236

    Abstract: MA3X717D MA3X717E MA717WA MA717WK
    Text: Schottky Barrier Diodes SBD MA3X717D , MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 1.5 − 0.05 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V 30 mA Forward current


    Original     		PDF MA3X717D MA3X717E MA717WA, MA717WK) O-236 SC-59 MA3X717D MA717WK TO-236 MA3X717E MA717WA MA717WK

    MA3X704A

    Abstract: MA3X717 MA704A MA717
    Text: Schottky Barrier Diodes SBD MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward current


    Original     		PDF MA3X717 MA717) SC-59 MA3X704A MA3X717 MA704A MA717

    MA717

    Abstract: MARKING 103 MA3X704A MA3X717 MA704A
    Text: Schottky Barrier Diodes SBD MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3X717 MA717) MA3X704A MA704A) MA717 MARKING 103 MA3X704A MA3X717 MA704A

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X717D, MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit: mm For switching 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 5° 0.4±0.2 2.8+0.2 –0.3 1.50+0.25 –0.05 • Two MA3X717 (MA717) is contained in one package


    Original     		PDF MA3X717D, MA3X717E MA717WA, MA717WK) MA3X717 MA717) MA3X704D, MA3X704E MA704WA, MA704WK)

    104 M3D

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717E (MA717WK) Silicon epitaxial planar type For switching  Features • Package  Two MA3X717 is contained in one package  Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717E MA717WK) MA3X717 MA3X704E 104 M3D

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward current


    Original     		PDF MA3X717 MA717) MA3X704A MA704A)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X717D, MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit: mm For switching 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 5° 0.4±0.2 2.8+0.2 –0.3 1.50+0.25 –0.05 • Two MA3X717 (MA717) is contained in one package


    Original     		PDF MA3X717D, MA3X717E MA717WA, MA717WK) MA3X717 MA717) MA3X704D, MA3X704E MA704WA, MA704WK)

    MA3X704A

    Abstract: MA3X717
    Text: Schottky Barrier Diodes SBD MA3X717 Silicon epitaxial planar type Unit : mm + 0.2 For switching circuits For wave detection circuit 2.8 − 0.3 Reverse voltage (DC) VR 30 V Peak forward current IFM 150 mA Forward current (DC) IF 30 mA Junction temperature


    Original     		PDF MA3X717 O-236 SC-59 MA3X704A MA3X717

    MA3X704A

    Abstract: MA3X717 MA704A MA717
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717 MA717) MA3X704A MA704A) MA3X704A MA3X717 MA704A MA717

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3X717 MA717) MA3X704A MA704A)

    MA3X704D

    Abstract: MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA704WK MA717 MA717WA MA717WK
    Text: Schottky Barrier Diodes SBD MA3X717D, MA3X717E (MA717WA, MA717WK) Silicon epitaxial planar type Unit: mm For switching 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 5˚ 0.4±0.2 2.8+0.2 –0.3 1.50+0.25 –0.05 • Two MA3X717 (MA717) is contained in one package


    Original     		PDF MA3X717D, MA3X717E MA717WA, MA717WK) MA3X717 MA717) MA3X704D, MA3X704E MA704WA, MA704WK) MA3X704D MA3X704E MA3X717 MA3X717D MA3X717E MA704WA MA704WK MA717 MA717WA MA717WK

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent