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    Panasonic Electronic Components MA3S781D0L

    DIODE ARR SCHOT 30V 30MA SSMINI3
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    MA3S781D Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MA3S781D Panasonic Diode Original PDF
    MA3S781D Panasonic Silicon epitaxial planar type Original PDF
    MA3S781D Panasonic Silicon Epitaxial Planar Type SBD Original PDF
    MA3S781D0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SSMINI3 Original PDF
    MA3S781DGL Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SSMINI3 Original PDF

    MA3S781D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA3S7810G

    Abstract: MA3S781DG MA3S781EG
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SSMini3-F3


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    PDF 2002/95/EC) MA3S781DG, MA3S781EG MA3S781DG MA3S7810G MA3S781DG MA3S781EG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name MA3S781DG 1: Cathode 1


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    PDF 2002/95/EC) MA3S781DG, MA3S781EG MA3S7810G MA3S781DG MA3S781EG

    M2P diode

    Abstract: Double high-speed switching diode MA3S781D
    Text: Schottky Barrier Diodes SBD MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features VR 30 V Peak reverse voltage VRM 30 V Single 0.12 − 0.02 Reverse voltage (DC) + 0.05 0.28 ± 0.05 Unit + 0.05 Rating


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    PDF MA3S781D M2P diode Double high-speed switching diode MA3S781D

    MA3S7810G

    Abstract: MA3S781DG MA3S781EG
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name MA3S781DG 1: Cathode 1


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    PDF 2002/95/EC) MA3S781DG, MA3S781EG MA3S781DG MA3S7810G MA3S781DG MA3S781EG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05


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    PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type For high speed switching For wave detection • Package M Di ain sc te on na tin nc ue e/ d • Code SSMini3-F3


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    PDF 2002/95/EC) MA3S781DG, MA3S781EG MA3S781DG MA3S781DG: MA3S781EG:

    M2P diode

    Abstract: MA3S781D MA781WA
    Text: Schottky Barrier Diodes SBD MA3S781D (MA781WA) Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features 0.28 ± 0.05 VR 30 V Peak reverse voltage VRM 30 V Single + 0.05 Reverse voltage (DC) 0.12 − 0.02 Unit + 0.05


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    PDF MA3S781D MA781WA) M2P diode MA3S781D MA781WA

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
    Text: Schottky Barrier Diodes SBD MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible


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    PDF MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 For high speed switching (0.44) M Di ain sc te on na tin nc ue e/


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    PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05


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    PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible


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    PDF MA3S781D, MA3S781E MA781WA, MA781WK) MA3S781 MA781)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 3˚ (0.80)


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    PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781)

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK SC-89
    Text: ショットキーバリヤ・ダイオード SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package


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    PDF MA3S781D, MA3S781E MA781WA, MA781WK) MA3S781 MA781) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK SC-89

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 For high speed switching (0.44) M Di ain sc te on na tin nc ue e/


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    PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


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    PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


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    PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MA716

    Abstract: MA7D50 ma741 MA10799
    Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742


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    PDF MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799

    Untitled

    Abstract: No abstract text available
    Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3


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    PDF MA2D760 MA3D761 MA2D755 MA3D756 MA3D760 MA3U760 MA3D752 MA3D752A MA3D755 MA3U755

    zener diode SMD marking code 27 4F

    Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) zener diode SMD marking code 27 4F smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1