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    Panasonic Electronic Components MA3J74500L

    DIODE SCHOTT 30V 30MA SMINI3-F1
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    Panasonic Electronic Components MA3J745E0L

    DIODE ARR SCHOTT 30V 30MA SMINI3
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    MA3J745 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MA3J745 Panasonic Silicon epitaxial planar type Original PDF
    MA3J745 Panasonic Diode Original PDF
    MA3J745 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3J74500L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.03A SMINI3 Original PDF
    MA3J745D Panasonic Diode Original PDF
    MA3J745D Panasonic Silicon epitaxial planar type Original PDF
    MA3J745D Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3J745D0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SMINI3 Original PDF
    MA3J745E Panasonic Silicon epitaxial planar type Original PDF
    MA3J745E Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3J745E Panasonic Diode Original PDF
    MA3J745E0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SMINI3 Original PDF

    MA3J745 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA3J745E

    Abstract: MA745WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745E MA745WK) MA3J745E MA745WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Anode 1 2: Anode 2


    Original     		PDF 2002/95/EC) MA3J745EG

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF MA3J745D, MA3J745E MA745WA, MA745WK)

    MA3X704A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7450G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name


    Original     		PDF 2002/95/EC) MA3J7450G MA3X704A MA3X704A

    104 M3D

    Abstract: MA3J745D MA3J745E MA745WA MA745WK
    Text: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC)


    Original     		PDF MA3J745D, MA3J745E MA745WA, MA745WK) MA3J745D MA3J745D: MA3J745E: 104 M3D MA3J745E MA745WA MA745WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745 MA745) MA3X704A MA704A)

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    MA3J745D

    Abstract: MA745WA
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745D MA745WA) MA3J745D MA745WA

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features M Di ain sc te on na tin nc ue e/ d  Code SMini3-F2


    Original     		PDF 2002/95/EC) MA3J745EG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Anode 1 2: Anode 2


    Original     		PDF 2002/95/EC) MA3J745EG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745DG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Cathode 1 2: Cathode 2


    Original     		PDF 2002/95/EC) MA3J745DG

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    electronic power generator using transistor

    Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short


    Original     		PDF MA3J745 MA745) MA3X704A MA704A) electronic power generator using transistor Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745E MA745WK)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3J745 MA745) MA3X704A MA704A)

    MA3J745D

    Abstract: MA3J745E MA745WA MA745WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA), MA3J745E (MA745WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA3J745D MA745WA) MA3J745E MA745WK) MA3J745D: MA3J745E: MA3J745D MA3J745E MA745WA MA745WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745D (MA745WA) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF 2002/95/EC) MA3J745D MA745WA)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package  Features  Code SMini3-F2  Pin Name 1: Anode 1 2: Anode 2


    Original     		PDF 2002/95/EC) MA3J745EG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745DG, MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J745DG 1: Cathode 1 2: Cathode 2


    Original     		PDF 2002/95/EC) MA3J745DG, MA3J745EG MA3J745DG MA3J745EG

    104 M3D

    Abstract: MA3J745E
    Text: Schottky Barrier Diodes SBD MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward


    Original     		PDF MA3J745E 104 M3D MA3J745E

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features


    Original     		PDF 2002/95/EC) MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    MA3J745

    Abstract: MA3X704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short


    Original     		PDF MA3J745 MA745) MA3X704A) MA3J745 MA3X704A MA745

    MA3J745

    Abstract: MA3X704A
    Text: Schottky Barrier Diodes SBD MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short


    Original     		PDF MA3J745 MA3X704A) MA3J745 MA3X704A

    MA3J745E

    Abstract: MA745WK
    Text: Schottky Barrier Diodes SBD MA3J745E (MA745WK) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward


    Original     		PDF MA3J745E MA745WK) MA3J745E MA745WK