MARKING 7Y
Abstract: smd marking rd smd rf transistor marking MA2ZV02 smd marking CD
Text: Diodes SMD Type Silicon Epitaxial Planar Diode MA2ZV02 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features Good linearity and large capacitance-ratio in CD-VR relation +0.1 2.6-0.1 1.0max Small series resistance rD 0.375 0.475
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MA2ZV02
OD-323
MARKING 7Y
smd marking rd
smd rf transistor marking
MA2ZV02
smd marking CD
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Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit: mm For VCO 0.30+0.10 –0.05 2 1 Unit 0.9±0.1 VR 6 V Tj 150 °C Tstg −55 to +150 °C 0.00±0.05 Storage temperature Rating ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R
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MA2ZV02
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit: mm For VCO 0.30+0.10 –0.05 2 1 Unit 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9±0.1 Rating VR 0.00±0.05 Symbol 0.90±0.15 7˚ • Absolute Maximum Ratings Ta = 25°C
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MA2ZV02
MA2ZV02
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MA2ZV02
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 1.7 ± 0.1 2.5 ± 0.2 + 0.1 0.16 − 0.06
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7Y 6
Abstract: No abstract text available
Text: MA111 Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planer type Unit : mm For VCO INDICATES CATHODE ● Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- 1 0.4±0.15 matic insertion through taping 2 +0.1
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MA111
MA2ZV02
470MHz
7Y 6
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Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit: mm For VCO 0.30+0.10 –0.05 2 1 Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9±0.1 Unit 0.00±0.05 Rating 0.90±0.15 7˚ • Absolute Maximum Ratings Ta = 25°C
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Diode70
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MA2ZV02
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit: mm For VCO 0.30+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 2 0.4 0.16 +0.10 –0.06 Unit 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9±0.1
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Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 1.7 ± 0.1 2.5 ± 0.2 + 0.1 0.16 − 0.06
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MA2ZV02
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA2SV15
Abstract: No abstract text available
Text: Part Number List • Variable Capacitance Diodes Part Number Page Part Number Page Part Number Page Part Number Page Part Number Page MA26304 115 MA26V15 128 MA27V13 109 MA2S376 67 MA2Z360 27 MA26376 116 MA26V16 129 MN27V14 111 MA2S377 69 MA2Z365 35 MA26V01
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MA26304
MA26376
MA26V01
MA26V02
MA26V03
MA26V04
MA26V05
MA26V07
MA26V09
MA26V11
MA2SV15
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
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marking code V6 33 surface mount diode
Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3
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ADE-508-010A
ADE-508-016
ADE-508-017
HVL355B
HVL358B
HVL368B
HVL375B
HVL385B
marking code V6 33 surface mount diode
philips surface mount zener diode v6
zener diode application
IPS302
04BZ
1w402
DIODE marking S4 59A
marking 513 SOD-323
MARKING 621 SOD-323
1w379
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MA362
Abstract: DIODE D28 06 MA344 MA334
Text: SS-Mini Type 2 Pins 079 UHF/VHF Tun ins MA2S372 CATV Tuning MA2S357 SHF Tuning UHF/VHF AFC MA2S367 type S-Mini Type S-Mini 2 Pins 2 Pins Flat (D4) (D3) MA360 MA372 MA366 MA365 MA371 MA374 MA357 MA368 MA367 MA372J Mini Type 2 Pins (D U ) Mini Type 3 Pins
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MA360
MA372
MA372J
MA321
MA334
MA339
MA329
MA335
MA338
MA344
MA362
DIODE D28 06
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