marking a7
Abstract: A7 DIODE marking A7 diode DIODE A7 MA147 swithing
Text: MA147 SWITHING DIODE Package:SOT-23 High Switching Speed ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 80 Vdc Peak Repetitive Reverse Voltage VRM 80 V IF 100 Forward Current Single Series Forward Continuous Single Current
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MA147
OT-23
100mA
100uA
MA147
marking a7
A7 DIODE
marking A7 diode
DIODE A7
swithing
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marking a7
Abstract: MA147
Text: MA147 SWITHING DIODE Package:SOT-23 High Switching Speed ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 80 Vdc Peak Repetitive Reverse Voltage VRM 80 V IF 100 Forward Current Single Series Forward Continuous Single Current
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Original
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MA147
OT-23
100mA
100uA
MA147
marking a7
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PDF
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ma147 package
Abstract: No abstract text available
Text: MA142WK Switching Diodes MA147 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting ● Series connection in package 0.3–0 Small S-Mini type package with two incorporated elements, enabling
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MA142WK
MA147
100mA
ma147 package
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A35V
Abstract: MA147 MA3J147
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting
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2002/95/EC)
MA3J147
MA147)
A35V
MA147
MA3J147
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PDF
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MA147
Abstract: MA3J147
Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For high-speed switching circuits 1.25 ± 0.1 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Features • Small S-mini type package contained two elements, allowing highdensity mounting
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MA3J147
MA147)
MA147
MA3J147
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MA147
Abstract: MA3J147
Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting • Two diodes are connected in series in the package
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MA3J147
MA147)
MA147
MA3J147
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Two isolated elements contained in one package, allowing highdensity mounting
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Original
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2002/95/EC)
MA3J147
MA147)
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PDF
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MA147
Abstract: MA3J147
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting
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2002/95/EC)
MA3J147
MA147)
MA147
MA3J147
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PDF
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sc-79
Abstract: diodes ir Double high-speed switching diode MA147 MARKING 103 MA3J147
Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting • Two diodes are connected in series in the package
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Original
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MA3J147
MA147)
sc-79
diodes ir
Double high-speed switching diode
MA147
MARKING 103
MA3J147
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PDF
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MA147
Abstract: MA3J147
Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward
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MA3J147
MA147)
MA147
MA3J147
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PDF
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MA3J147
Abstract: MA147
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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2002/95/EC)
MA3J147
MA147)
MA3J147
MA147
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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PDF
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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Untitled
Abstract: No abstract text available
Text: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)
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OCR Scan
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MA111
MA176WK
AMA2S111
MA177/A
MA112Ã
MA180
MA113
pins0/178
DO-35/34
D31/27
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A4056
Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
Text: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type
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OCR Scan
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DO-34
DO-35
MA199
MA158
MA174
MA188
MA115
MA114
MA193
MA132WA
A4056
A4047
D83 ZENER
MA2430
A4091
MA207 460 00 16
A4100
A4160
A3100W
MA2Z200
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MA164
Abstract: MA373 7400 fan-in MA154 T-42-11-05
Text: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays
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OCR Scan
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7----T-42-U-05
50L15/35L12
50L15/35L12
MA167
MA170
MA183
CA94039
MA164
MA373
7400 fan-in
MA154
T-42-11-05
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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