MA10700
Abstract: MA3J700
Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time trr
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MA3J700
MA10700)
MA10700
MA3J700
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3J700
MA10700)
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diode m2w
Abstract: MA10700 MA3J700
Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition
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MA3J700
MA10700)
diode m2w
MA10700
MA3J700
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3J700
MA10700)
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MA10700
Abstract: MA3J700
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1
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2002/95/EC)
MA3J700
MA10700)
MA10700
MA3J700
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marking M2w
Abstract: MA10700 MA3J700
Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Symbol Rating Unit VR 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current
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MA3J700
MA10700)
marking M2w
MA10700
MA3J700
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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diode m2w
Abstract: marking M2w m2w marking
Text: MA111 Schottky Barrier Diodes SBD MA10700 Silicon epitaxial planer type Unit : mm For high-frequency rectification 2.1±0.1 0.425 • Features ● Fast trr (reverse recovery time), optimum for high-frequency rectifica- tion +0.1 0.3–0 IF(AV)= 500mA rectification possible
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MA111
MA10700
500mA
diode m2w
marking M2w
m2w marking
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MA10700
Abstract: MA3J700 m2w marking marking M2w
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3J700
MA10700)
MA10700
MA3J700
m2w marking
marking M2w
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MARKING SAS 05
Abstract: marking M2w
Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 5° • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit
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MA3J700
MA10700)
MARKING SAS 05
marking M2w
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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a715
Abstract: MA748 ma723 MA729
Text: Package SS-Mini Type 2 Pins D78 SS-Mini Type 3 Pins (D2) S-Mini Type 2 Pins (D3) S-Mini Type 3 Pins (D5) S-Mini Type 4 Pins (D7) S-Mini Type 6 Pins (010) Mini Type 2 Pins (D 11 ) Mini Type 3 Pins (012) Mini Type Mini Type 6 Pins 4 Pins (D14) (016) Mini-Power
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OCR Scan
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DO-34
MA700
MA704
MA795
MA795WA/WK*
MA704A
MA741
MA741WAA/VK*
MA742*
MA4S713*
a715
MA748
ma723
MA729
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MA10701 SCHOTTKY diode
Abstract: MA741
Text: Package SS Mini Type 2 Pin D78 SS Mini Type 3 Pin (D2) S Mini Type 2 Pin (03) S Mini Type 3 Pin (D5) S Mini Type 4 Pin (D7) 5 Mini Type 6 Pin (D10) Mini Type 2 Pin (D11) Mini Type 3 Pin (D12) Mini Type 4 Pin (014) Mini Type 6 Pin (D16) Mini Power <D17) New Mini
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DO-34
MA700
MA704
MA732
MA795
MA795WA/WK*
MA2S728
MA781
MA781WA/WK*
MA728
MA10701 SCHOTTKY diode
MA741
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